Patents by Inventor Judith A. Wright

Judith A. Wright has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a crack stop void in a low-k dielectric layer between adjacent fuses
    Patent number: 7479447
    Abstract: A crack stop void is formed in a low-k dielectric layer between adjacent fuse structures for preventing propagation of cracks between the adjacent fuse structures during a fuse blow operation. The crack stop void is formed simultaneously with the formation of an interconnect structure.
    Type: Grant
    Filed: March 24, 2006
    Date of Patent: January 20, 2009
    Assignee: International Business Machines Corporation
    Inventors: Timothy H. Daubenspeck, Christopher D. Muzzy, Paul S. McLaughlin, Judith A. Wright, Jean E. Wynne, Dae Young Jung
  • Semiconductor trench capacitor cell having a buried strap
    Patent number: 5770876
    Abstract: A semiconductor trench capacitor structure having a first level aligned insulation structure and buried strap that extends from within the trench into the semiconductor substrate. The semiconductor trench capacitor structure may be fabricated by forming a shallow trench extending into both the trench capacitor and the semiconductor substrate, depositing and densifying an insulating material within the shallow trench and using a resist layer to define and etch a strap trench aligned with the wall of the shallow trench, depositing a layer of conductive material within the strap trench and followed by depositing an insulating material therein.
    Type: Grant
    Filed: November 13, 1996
    Date of Patent: June 23, 1998
    Assignee: International Business Machines Corporation
    Inventors: Chung Hon Lam, David K. Lord, Judith A. Wright
  • Method of making semiconductor trench capacitor cell having a buried strap
    Patent number: 5545583
    Abstract: A semiconductor trench capacitor structure having a first level aligned insulation structure and buried strap that extends from within the trench into the semiconductor substrate. The semiconductor trench capacitor structure may be fabricated by forming a shallow trench extending into both the trench capacitor and the semiconductor substrate, depositing and densifying an insulating material within the shallow trench and using a resist layer to define and etch a strap trench aligned with the wall of the shallow trench, depositing a layer of conductive material within the strap trench and followed by depositing an insulating material therein.
    Type: Grant
    Filed: April 13, 1995
    Date of Patent: August 13, 1996
    Assignee: International Business Machines Corporation
    Inventors: Chung H. Lam, David K. Lord, Judith A. Wright