Abstract: According to one embodiment of the present invention, a semiconductor device includes a first layer of dielectric material disposed upon an upper surface of a substrate of a semiconductor device and a first non-conductive layer of metal disposed upon an upper surface of the dielectric material. The first layer of dielectric material and the first non-conductive layer of metal act as an optical trap for electromagnetic radiation received by the first non-conductive layer of metal. In particular embodiments, the semiconductor device may further comprise a second layer of dielectric material disposed upon an upper surface of the first non-conductive layer of metal and a second non-conductive layer of metal disposed upon an upper surface of the second layer of dielectric material.

Abstract: A method and system of reducing the permanent accumulated deformation of a deflectable member of a micromechanical device through thermal stabilization. The accumulated deformation is due to the repeated bending or twisting of a flexible component of the micromechanical deice typically the repetitive deformation of a flexible hinge connecting a rigid member to substrate. After the device is fabricated, passivated (316), and packaged (322), the packaged device is baked (326) at a temperature of at least 120° C. A 150° C. bake for 12 to 16 hours is preferred. Lower temperatures required longer baking periods.