Abstract: A simple process for card assembly by Direct Chip Attachment (DCA) uses electrically conductive adhesives. Two methods create the same intermediate wafer product with a layer of insulative thermoplastic and conductive thermoplastic bumps. After sawing or dicing the wafer to form the chips, the chips are adhered to chip carriers with conductive pads which match the conductive thermoplastic bumps, using heat and pressure. Chips may be easily removed and replaced using heat.

Abstract: The present invention is directed to a process of a method for the full metallization of thru-holes in a polymer structure comprising the steps of applying a film-forming amount of a conductive polymer-metal composite paste to a metal cathode; bonding a patterned polymer structure to said paste; subjecting said polymer structure to an electrolytic plating bath for a time sufficient to fully metallize thru-hole surfaces in said patterned polymer structure and removing the structure from the cathode assembly. The fully metallized thru-hole polymer structure can then be cleaned and polished to produce a finished product.

Abstract: A simple process for card assembly by Direct Chip Attachment (DCA) uses electrically conductive adhesives. Two methods create the same intermediate wafer product with a layer of insulative thermoplastic and conductive thermoplastic bumps. After sawing or dicing the wafer to form the chips, the chips are adhered to chip carriers with conductive pads which match the conductive thermoplastic bumps, using heat and pressure. Chips may be easily removed and replaced using heat.

Abstract: Improved adhesion of electroless metal deposited on an organic dielectric layer with phase separated morphology is accomplished by the spontaneous formation of a morphologically and topographically rough surface. In one embodiment a ternary solution of a polar solvent and two polymer precursors of the same polymer which are separable in two phases of different order are cast in film on a substrate and heated to form two phases of different order to spontaneously produce a rough surface. Upon exposure to an alkaline solution, one phase is etched at a faster rate than the other. Seeding and electroless deposition of a metal on the rough surface results in improved adhesion of the metal to the dielectric layer. In a second embodiment a quaternary solution of a polar solvent, a seeding agent, two polymer precursors of the same polymer which are separable in two phases of different order are cast in a thin film on a substrate and heated to form three phases.

Abstract: The fluxless bonding in a reducing atmosphere of integrated circuit contacts containing copper is enhanced using a layer of 200 to 1500 Angstrom thick palladium which inhibits copper oxide formation before fusion and reduces all oxides to promote wetting during fusion.

Abstract: The fluxless bonding in a reducing atmosphere of integrated circuit contacts containing copper is enhanced using a layer of 200 to 1500 Angstrom thick palladium which inhibits copper oxide formation before fusion and reduces all oxides to promote wetting during fusion.