Abstract: A tape guide that has textured surface over which the tape passes. The textured surface has a surface roughness exceeding the flying height of the tape above the surface. This new irregular surface topography reduces the air bearing and allows limited contact between the tape guide and the tape while minimizing tape distortion that can occur with other surface topographies.

Abstract: A magnetic random access memory module includes a magnetic memory array. A permeable metal layer extends over a first side of the magnetic memory array. An electrically insulating layer is disposed between the permeable metal layer and the magnetic memory array.

Abstract: In one embodiment, a memory device includes a plurality of magnetic data cells and a magnetic reference cell extending uninterrupted along more than one of the plurality of data cells.

Abstract: A write line structure for a magnetic memory cell includes a write conductor having a front surface facing the memory cell, a back surface and two sides surfaces. A cladding layer is disposed adjacent a portion of the front surface of the write conductor, with the cladding layer terminating at spaced first and second poles adjacent the front surface of the write conductor. A data storage layer is operatively positioned adjacent the cladding layer. The distance between the poles is less than the width of the write conductor. The width of the data storage layer may be greater than or less than the distance between the poles.

Abstract: A magnetic random access memory array includes a data storage layer having an easy axis. A non-linear first conductor is positioned on a first side of the data storage layer, wherein a portion of the first conductor has an angle of orientation that is perpendicular to the easy axis. A non-linear second conductor is positioned on a second side of the data storage layer, wherein a portion of the second conductor also has an angle of orientation that is perpendicular to the easy axis.

Abstract: A write line structure for a magnetic memory cell includes a write conductor having a front surface facing the memory cell, a back surface and two sides surfaces. A cladding layer is disposed adjacent a portion of the front surface of the write conductor, with the cladding layer terminating at spaced first and second poles adjacent the front surface of the write conductor. A data storage layer is operatively positioned adjacent the cladding layer. The distance between the poles is less than the width of the write conductor. The width of the data storage layer may be greater than or less than the distance between the poles.

Abstract: A magnetic memory device has a plurality of write lines and a plurality of memory cells. Each of the plurality of memory cells are operatively positioned between a corresponding pair of the plurality of write lines. Each of the plurality of memory cells has a sense layer and a reference layer separated by an insulating layer. The reference layer of each of the plurality of memory cells includes a high coercivity permanent magnet.

Abstract: A magnetic random access memory module includes a magnetic memory array. A permeable metal layer extends over a first side of the magnetic memory array. An electrically insulating layer is disposed between the permeable metal layer and the magnetic memory array.

Abstract: A magnetic random access memory device uses toroid-like magnetic memory cells. An axial opening extends through each of the memory cells and is generally aligned along a first axis. A first conductor and a second conductor pass through the axial opening of each memory cell and are generally aligned with the first axis.

Abstract: A multi-layer random access memory device uses a shared conductive trace for writing to the MRAM memory cells. The MRAM has N (where N is greater than 1) stacked magnetic storage elements, where each of the N magnetic storage elements is operatively positioned between a different adjacent pair of N+1 stacked conductive traces. In one embodiment, the MRAM device includes a first conductive trace for generating a first magnetic field in response to a current applied to the first conductive trace, a second conductive trace for generating a second magnetic field in response to a current applied to the second conductive trace, and a third conductive trace for generating a third magnetic field in response to a current applied to the third conductive trace.

Abstract: A write line structure for a magnetic memory cell includes a write conductor having a front surface facing the memory cell, a back surface and two sides surfaces. A cladding layer is disposed adjacent a portion of the front surface of the write conductor, with the cladding layer terminating at spaced first and second poles adjacent the front surface of the write conductor. A data storage layer is operatively positioned adjacent the cladding layer. The distance between the poles is less than the width of the write conductor. The width of the data storage layer may be greater than or less than the distance between the poles.

Abstract: A tape guide that has textured surface over which the tape passes. The textured surface has a surface roughness exceeding the flying height of the tape above the surface. This new irregular surface topography reduces the air bearing and allows limited contact between the tape guide and the tape while minimizing tape distortion that can occur with other surface topographies.