Patents by Inventor JUE OUYANG

JUE OUYANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HEMT semiconductor device with a stepped sidewall
    Patent number: 11862721
    Abstract: A semiconductor device includes a semiconductor substrate, first and second nitride-based semiconductor layers, S/D electrodes, a gate electrode, and a first passivation layer. The first nitride-based semiconductor layer is disposed over the semiconductor substrate. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer, so as to form a 2DEG region. The S/D electrodes is disposed over the second nitride-based semiconductor layer. The gate electrode is disposed between the S/D electrodes. The first passivation layer is disposed over the second nitride-based semiconductor layer. Edges of the first and second nitride-based semiconductor layers and the first passivation layer collectively form a stepped sidewall over the semiconductor substrate.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: January 2, 2024
    Assignee: INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
    Inventors: Yulong Zhang, Jue Ouyang, Wei Huang, Jheng-Sheng You
  • Nitride-based semiconductor devices with recesses for dicing and methods of fabricating the same
    Patent number: 11854887
    Abstract: The present disclosure provides a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a group III-V layer disposed on the substrate, a dielectric layer disposed on the group III-V layer, and an inclined sidewall extending from the dielectric layer to the substrate. Wherein the substrate comprising a relative rough surface opposite the inclined sidewall.
    Type: Grant
    Filed: April 10, 2020
    Date of Patent: December 26, 2023
    Assignee: INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
    Inventors: Weixing Du, Yulong Zhang, Jue Ouyang, Minghong Chang
  • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20220302296
    Abstract: A semiconductor device includes a semiconductor substrate, first and second nitride-based semiconductor layers, S/D electrodes, a gate electrode, and a first passivation layer. The first nitride-based semiconductor layer is disposed over the semiconductor substrate. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer, so as to form a 2DEG region. The S/D electrodes is disposed over the second nitride-based semiconductor layer. The gate electrode is disposed between the S/D electrodes. The first passivation layer is disposed over the second nitride-based semiconductor layer. Edges of the first and second nitride-based semiconductor layers and the first passivation layer collectively form a stepped sidewall over the semiconductor substrate.
    Type: Application
    Filed: September 30, 2020
    Publication date: September 22, 2022
    Inventors: Yulong ZHANG, Jue OUYANG, Wei HUANG, Jheng-Sheng YOU
  • SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
    Publication number: 20220122885
    Abstract: The present disclosure provides a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a group III-V layer disposed on the substrate, a dielectric layer disposed on the group III-V layer, and an inclined sidewall extending from the dielectric layer to the substrate. Wherein the substrate comprising a relative rough surface opposite the inclined sidewall.
    Type: Application
    Filed: April 10, 2020
    Publication date: April 21, 2022
    Inventors: WEIXING DU, YULONG ZHANG, JUE OUYANG, MINGHONG CHANG