Abstract: A semiconductor arrangement for an integrated circuit is provided that includes a first region in which a number of components are formed, a second region, a buried insulating layer for vertically insulating the first region, an insulating structure, which is formed between the first region and the second region for laterally insulating the first region from the second region. The insulating structure can have a trench structure with a dielectric and a conductor structure with a semiconductor material. Whereby the trench structure borders on the buried insulating layer, and the conductor structure is designed to conductively connect the first region to the second region.

Abstract: A circuit having an input amplifier and a second amplifier that provides the circuit with a unity gain crossover frequency that is higher than a unity gain crossover frequency of the input amplifier is provided. The circuit has a control input coupled to a control input of the input amplifier and also has a first current connection and a second current connection. The circuit further includes an additional amplifier that is connected in series with the second amplifier and is controlled by the input amplifier.

Abstract: A bipolar transistor and a method for manufacturing the bipolar transistor is disclosed. The bipolar transistor is formed by the steps of: doping of a surface region of a substrate with a first doping to form an active emitter region; formation of at least one cavity in the substrate; application of a dielectric isolation layer to the surface of the at least one cavity in the substrate; formation of a contiguous base region with a second doping both in the at least one cavity to provide a base connection region, electrically isolated from the substrate by the dielectric isolation layer, and also at least partially on the formed active emitter region to provide a base region electrically connected to the substrate; and formation of a collector region with a third doping at least on the formed base region to provide a collector electrically connected to the formed base region.

Abstract: A circuit having an input amplifier and a second amplifier that provides the circuit with a unity gain crossover frequency that is higher than a unity gain crossover frequency of the input amplifier is provided. The circuit has a control input coupled to a control input of the input amplifier and also has a first current connection and a second current connection. The circuit further includes an additional amplifier that is connected in series with the second amplifier and is controlled by the input amplifier.