Abstract: The present invention refers to a method as well as an apparatus for depositing a layer at a substrate, the layer containing at least two components co-deposited by at least two evaporation sources, wherein the mixture of the components regarding the content of the components is set by tilting the evaporation sources to predetermined angle and/or by positioning the evaporation sources at a predetermined distance with respect to the substrate and/or wherein evaporation plumes of the evaporation sources are arranged such that the maxima of the evaporation plumes are separated locally with respect to the substrate.

Abstract: An evaporation apparatus for coating a substrate having an evaporation structure for evaporating material, the evaporation structure having an evaporation structure surface for receiving a wire; a wire feed for providing the wire; and a bending fixture with the bending fixture including a first and a second roller for giving the wire a reproducible curvature so that in operation of the evaporation apparatus the contact spot of the wire on the evaporation structure is at a desired position.

Abstract: The present invention refers to a method as well as an apparatus for depositing a layer at a substrate, the layer containing at least two components co-deposited by at least two evaporation sources, wherein the mixture of the components regarding the content of the components is set by tilting the evaporation sources to predetermined angle and/or by positioning the evaporation sources at a predetermined distance with respect to the substrate and/or wherein evaporation plumes of the evaporation sources are arranged such that the maxima of the evaporation plumes are separated locally with respect to the substrate.

Abstract: The invention relates to a device for the regulation of a plasma impedance in a vacuum chamber, wherein at least one electrode is connected to an AC generator. This AC generator is a free-running [oscillator], whose frequency adjusts to the resonance frequency of the load upon which it acts. This load comprises fixed circuit elements and a variable plasma impedance. If the plasma impedance is changed, with it the resonance frequency is also changed. The plasma impedance can thus be varied by acquisition of the resonance frequency and by presetting of a reference frequency value, for example thereby that the voltage, the current, the power or the gas inflow is varied as a function of the difference between resonance frequency and reference frequency value.

Abstract: A process gas source (16) is connected to the vacuum chamber (5), and a metering valve (12) actuated by an automatic controller is installed between the vacuum chamber (5) and the process gas source (16). A potentiometric measurement electrode compares the amount of a gas in the vacuum chamber (5) with a reference gas by way of a reference electrode or with a solid body substituting for the reference electrode and sends a signal to automatic control unit (14), which contains a signal amplifier. The control unit then drives the generator of the power supply or the metering valve for the process gas.

Abstract: A sputtering electrode is switched between two power values at a constant reactive gas flow rate which is selected so that the target of the sputtering electrode is in the metallic mode at the first power value while in the oxide mode at a second power value.