Abstract: A method of producing a housing cover includes providing a cover blank having a mounting surface formed on an underside; connecting the underside of the cover blank to a silicon slice; creating at least one opening in the silicon slice to expose at least part of the mounting surface; arranging a base metallization on the exposed part of the mounting surface; and removing the silicon slice.

Abstract: A method of producing a housing cover includes providing a cover blank having a mounting surface formed on an underside; connecting the underside of the cover blank to a silicon slice; creating at least one opening in the silicon slice to expose at least part of the mounting surface; arranging a base metallization on the exposed part of the mounting surface; and removing the silicon slice.

Abstract: In a method for producing a laser diode, a number of laser diodes are produced on a wafer. The wafer is broken down into wafer pieces, each wafer piece having a plurality of laser diodes being arranged side by side. One wafer piece is inserted into a first mount that includes a first covering element overlapping a front face of the wafer piece and shadowing a bottom area of the front face of the wafer piece. A minor layer is deposited on an unshadowed upper area of the wafer piece's front face. The wafer piece is inserted into a second mount, which includes a second covering element that shadows the minor layer of the upper area of the front face. An electrically conductive contact layer is deposited on an unshadowed bottom area of the wafer piece's front face. The wafer piece is subsequently broken down into individual laser diodes.

Abstract: A component carrier assembly (1) is provided which has a plurality of component carrier regions (10), which are intended for mounting semiconductor components. The component carrier assembly comprises a carrier body (2) with a first major face (21). On the first major face a trench pattern (3) is formed in the carrier body, with first trenches (31) extending parallel to one another in a first direction, the first trenches delimiting the component carrier regions in a second direction extending transversely of the trenches. A coating (4) is formed on the carrier body, such that the component carrier regions each have a first major face of the carrier body which is coated at least in places and a side face (5) of the trench pattern which is coated at least in places.

Abstract: Method for producing semiconductor laser elements (1) comprises A) providing a carrier composite (20) having a plurality of carriers (2) for the semiconductor laser elements (1), B) providing a laser bar (30) having a plurality of semiconductor laser diodes (3) which comprise a common growth substrate (31) and a semiconductor layer sequence (32) grown thereon, C) generating predetermined breaking points (35) on a substrate underside (34) of the growth substrate (31), said substrate underside facing away from the semiconductor layer sequence (32), D) attaching the laser bar (30) to a carrier upper side (23) of the carrier composite (20), wherein the attachment is performed at an elevated temperature and is followed by cooling, and E) singulating into the semiconductor laser elements (1), wherein steps B) to E) are performed in the indicated sequence.

Abstract: Method for producing semiconductor laser elements (1) comprises A) providing a carrier composite (20) having a plurality of carriers (2) for the semiconductor laser elements (1), B) providing a laser bar (30) having a plurality of semiconductor laser diodes (3) which comprise a common growth substrate (31) and a semiconductor layer sequence (32) grown thereon, C) generating predetermined breaking points (35) on a substrate underside (34) of the growth substrate (31), said substrate underside facing away from the semiconductor layer sequence (32), D) attaching the laser bar (30) to a carrier upper side (23) of the carrier composite (20), wherein the attachment is performed at an elevated temperature and is followed by cooling, and E) singulating into the semiconductor laser elements (1), wherein steps B) to E) are performed in the indicated sequence.

Abstract: In a method for producing a laser diode, a number of laser diodes are produced on a wafer. The wafer is broken down into wafer pieces, each wafer piece having a plurality of laser diodes being arranged side by side. One wafer piece is inserted into a first mount that includes a first covering element overlapping a front face of the wafer piece and shadowing a bottom area of the front face of the wafer piece. A minor layer is deposited on an unshadowed upper area of the wafer piece's front face. The wafer piece is inserted into a second mount, which includes a second covering element that shadows the minor layer of the upper area of the front face. An electrically conductive contact layer is deposited on an unshadowed bottom area of the wafer piece's front face. The wafer piece is subsequently broken down into individual laser diodes.

Abstract: A component carrier assembly (1) is provided which has a plurality of component carrier regions (10), which are intended for mounting semiconductor components. The component carrier assembly comprises a carrier body (2) with a first major face (21). On the first major face a trench pattern (3) is formed in the carrier body, with first trenches (31) extending parallel to one another in a first direction, the first trenches delimiting the component carrier regions in a second direction extending transversely of the trenches. A coating (4) is formed on the carrier body, such that the component carrier regions each have a first major face of the carrier body which is coated at least in places and a side face (5) of the trench pattern which is coated at least in places.

Abstract: A semiconductor laser module is disclosed, comprising a module carrier (20) having a mounting area (21), a pump device (1) arranged on the mounting area (21), a surface emitting semiconductor laser (40) arranged on the mounting area (21), and a frequency conversion device (6) arranged on the mounting area (21), wherein the mounting area (21) of the module carrier (20) has an area content of at most 100 mm2.

Abstract: A method for producing a multiplicity of semiconductor lasers (100) comprising the steps of providing a carrier wafer (30), producing an assembly (70) by applying a multiplicity of semiconductor laser chips (4) to a top side (31) of the carrier wafer (30), and singulating the assembly (70) to form a multiplicity of semiconductor lasers (100). Each semiconductor laser (100) comprises a mounting block (3) and at least one semiconductor laser chip (4). Each mounting block (3) has a mounting area (13) which runs substantially perpendicular to a top side (12) of the mounting block (3), on which top side the semiconductor laser chip (4) is arranged. The mounting area (13) is produced during the singulation of the assembly.

Abstract: A semiconductor laser module is disclosed, comprising a module carrier (20) having a mounting area (21), a pump device (1) arranged on the mounting area (21), a surface emitting semiconductor laser (40) arranged on the mounting area (21), and a frequency conversion device (6) arranged on the mounting area (21), wherein the mounting area (21) of the module carrier (20) has an area content of at most 100 mm2.

Abstract: An optical sensing head, which is for reading out an optical data memory, has a substrate with a main surface. An edge-emitting laser component is configured on the main surface of the substrate and has irradiation axis oriented essentially parallel to the first main plane. A deflection device is arranged on the main surface of the substrate and deflects the laser radiation in a direction that is essentially perpendicular to the main surface. At least one signal detector is provided for sensing the laser radiation that is reflected by the optical data memory. An optical element guides the deflected laser radiation to the optical data memory and guides reflected laser radiation to the signal detector. The optical element is connected to the substrate by at least one supporting element. The invention also includes a method for fabricating such a sensing head.