Abstract: A process for producing a silicon-SiC composite powder is provided. A gas stream I containing SiH4, Si2H6 and/or Si3H8 and at least one hydrocarbon of ethene and acetylene and a coaxial gas stream II containing hydrogen are fed into a hot wall reactor. The gas stream II forms the jacket stream with respect to the gas stream I. At least the gas stream I is reacted at a temperature of 900° C. to 1100° C. and subsequently at the outlet of the hot wall reactor the reaction mixture is cooled or allowed to cool and the pulverulent reaction product is separated from the gaseous materials.

Abstract: A process for producing a silicon-SiC composite powder is provided. A gas stream I containing SiH4, Si2H6 and/or Si3H8 and at least one hydrocarbon of ethene and acetylene and a coaxial gas stream II containing hydrogen are fed into a hot wall reactor. The gas stream II forms the jacket stream with respect to the gas stream I. At least the gas stream I is reacted at a temperature of 900° C. to 1100° C. and subsequently at the outlet of the hot wall reactor the reaction mixture is cooled or allowed to cool and the pulverulent reaction product is separated from the gaseous materials.

Abstract: A controlled preparation of octachlorotrisilane and higher polychlorosilane such as DCTS and DCPS from monomeric chlorosilane, proceeds by exposing the chlorosilane to a nonthermal plasma and recycling chlorosilane that has not been converted to octachlorotrisilane into the plasma.

Abstract: The invention relates to a process and an apparatus for preparation of polychlorosilanes from monomeric chlorosilanes, by subjecting the chlorosilanes to a thermal plasma.

Abstract: The invention relates to a process for preparing polysilanes by converting monosilane in the presence of hydrogen in a plasma, and to a plant for performing the process.

Abstract: The invention relates to a process for preparing dimeric and/or trimeric silanes by conversion of monosilane in a plasma and to a plant for performance of the process.

Abstract: The invention relates to a process and an apparatus for controlled preparation of octachlorotrisilane from monomeric chlorosilanes, by subjecting the chlorosilanes to a thermal plasma.

Abstract: Organofunctional silicon particles are covalently functionalized on their surface with at least one organic compound, for example a plurality of —O—(C1-C48)-alkyl compounds. The functionalization of the surface of the silicon particles makes it possible to adjust the properties of fluids in terms of their profile of properties by addition of the modified silicon particles. For instance, the alkoxy-functionalized silicon particles may preferably be added to a motor oil as additives for reducing viscosity.

Abstract: Hollow bodies having a silicon-comprising shell, are produced by, in a gas comprising at least one silane of the general formula SinH2n+2?mXm with n=1 to 4, m=0 to 2n+2 and X=halogen, (a) generating a non-thermal plasma by an AC voltage of frequency f, or operating a light arc, or introducing electromagnetic energy in the infrared region into the gas, giving a resulting phase which (b) is dispersed in a wetting agent and distilled, and then (c) the distillate is contacted at least once with a mixture of at least two of the substances hydrofluoric acid, nitric acid, water, giving a solid residue comprising hollow bodies having a silicon-comprising shell after the conversion reaction of the distillate with the mixture has abated or ended.

Abstract: The invention relates to a process for converting polychlorosilanes into hexachlorodisilane, by one or more trimeric polychlorosilanes or a trimeric polychlorosilane in a mixture with higher molecular weight polychlorosilanes being exposed to a gas discharge and hexachlorodisilane being formed and isolated.

Abstract: The invention relates to a process for preparing dimeric and/or trimeric silanes by conversion of monosilane in a plasma and to a plant for performance of the process.

Abstract: The invention relates to a process for preparing dimeric and/or trimeric silanes by conversion of monosilane in a plasma and to a plant for performance of the process.

Abstract: The invention relates to a process for producing trimeric and/or quaternary silicon compounds or trimeric and/or quaternary germanium compounds, where a mixture of silicon compounds or a mixture of germanium compounds is exposed to a nonthermal plasma, and the resulting phase is subjected at least once to a vacuum rectification and filtration.

Abstract: An apparatus for preparing dimeric and trimeric silicon compounds is provided. The apparatus includes a reactor for generating a nonthermal plasma; a collecting vessel in product flow communication with the nonthermal plasma reactor; and a series of at least three rectification columns in flow communication with the collecting vessel.

Abstract: The invention relates to a process for preparing dimeric and/or trimeric silanes by reaction of monosilane in noble gas in a non-thermal plasma, and also to a plant for performance of this process.

Abstract: A controlled preparation of octachlorotrisilane and higher polychlorosilane such as DCTS and DCPS from monomeric chlorosilane, proceeds by exposing the chlorosilane to a nonthermal plasma and recycling chlorosilane that has not been converted to octachlorotrisilane into the plasma.

Abstract: Silicon-containing particles are used for protection of industrial materials, such as electrooptical layers or electrooptical components, from electromagnetic radiation in the UV range and optionally in the visible as far as the IR range, wherein the particles take the form of primary particles having a particle size in the range from 1 to 100 nm and may optionally take the form of clusters of the primary particles. A particular advantage is the possibility of matching the absorption of the electromagnetic radiation to the wavelength region to be absorbed that is of interest in a defined manner via the particle size and the particle size distribution. The silicon-containing particles can be used as biocompatible and biodegradable UV protection in industrial applications and compositions for industrial applications as formulations, such as preferably in coating compositions, such as paint.

Abstract: Silicon-containing particles are used for protection of human cells from electromagnetic radiation in the UV range and optionally in the visible as far as the IR range, where the particles preferably take the form of clusters of primary particles having a particle size in the range from 5 to 100 nm. A particular advantage is the possibility of matching the absorption of the electromagnetic radiation to the wavelength region to be absorbed in a defined manner via the particle size. The silicon-containing particles can be used for biocompatible and biodegradable UV protection in cosmetic or medical formulations, such as preferably a sunscreen, or else in a cosmetic formulation for the UV protection of hair.

Abstract: Hollow bodies having a silicon-comprising shell, are produced by, in a gas comprising at least one silane of the general formula SinH2n+2?mXm with n=1 to 4, m=0 to 2n+2 and X=halogen, (a) generating a non-thermal plasma by an AC voltage of frequency f, or operating a light arc, or introducing electromagnetic energy in the infrared region into the gas, giving a resulting phase which (b) is dispersed in a wetting agent and distilled, and then (c) the distillate is contacted at least once with a mixture of at least two of the substances hydrofluoric acid, nitric acid, water, giving a solid residue comprising hollow bodies having a silicon-comprising shell after the conversion reaction of the distillate with the mixture has abated or ended.

Abstract: The invention relates to a process for preparing dimeric and/or trimeric silanes by conversion of monosilane in a plasma and to a plant for performance of the process.