Abstract: A light source includes a plurality of semiconductor components, wherein a semiconductor component includes a plurality of light-emitting diodes, the diodes are arranged in a predefined grid in at least one column in or on the semiconductor component, and a control circuit that drives the individual diodes is arranged on the semiconductor component.

Abstract: A lighting device comprising a plurality of components (2) provided for generating radiation, a plurality of row lines (Z1, Z2) and a plurality of column lines (S1, S2, . . . , S5) is specified, wherein the components are in each case electrically conductively connected to a row line and to a column line and the lighting device is provided for the simultaneous operation of at least two components. A lighting arrangement comprising such a lighting device and a method for operating a lighting device are furthermore specified.

Abstract: A light source includes a plurality of semiconductor components, wherein a semiconductor component includes a plurality of light-emitting diodes, the diodes are arranged in a predefined grid in at least one column in or on the semiconductor component, and a control circuit that drives the individual diodes is arranged on the semiconductor component.

Abstract: A lighting device comprising a plurality of components (2) provided for generating radiation, a plurality of row lines (Z1, Z2) and a plurality of column lines (S1, S2, . . . , S5) is specified, wherein the components are in each case electrically conductively connected to a row line and to a column line and the lighting device is provided for the simultaneous operation of at least two components. A lighting arrangement comprising such a lighting device and a method for operating a lighting device are furthermore specified.

Abstract: An optoelectronic component includes a housing having a first cavity open toward an upper side of the housing, and a second cavity open toward the upper side of the housing, wherein the first cavity and the second cavity connect by a connecting channel, an optoelectronic semiconductor chip is arranged in the first cavity, a potting material is arranged in a region of the first cavity enclosing the optoelectronic semiconductor chip, a bond wire is arranged between an electrical contact surface of the optoelectronic semiconductor chip and a bond surface of the housing, and the bond surface is arranged in the connecting channel.

Abstract: An optoelectronic arrangement includes a first circuit board, a second circuit board, and an optoelectronic semiconductor chip arranged on the first circuit board, wherein a first electrical contact surface and a second electrical contact surface are formed on a surface of the first circuit board, a first mating contact surface and a second mating contact surface are formed on a surface of the second circuit board, and the first circuit board and the second circuit board connect to one another such that the surface of the first circuit board faces toward the surface of the second circuit board, and the first mating contact surface electrically conductively connects to the first contact surface and the second mating contact surface electrically conductively connects to the second contact surface.

Abstract: A lighting device comprising a plurality of components (2) provided for generating radiation, a plurality of row lines (Z1, Z2) and a plurality of column lines (S1, S2, . . . , S5) is specified, wherein the components are in each case electrically conductively connected to a row line and to a column line and the lighting device is provided for the simultaneous operation of at least two components. A lighting arrangement comprising such a lighting device and a method for operating a lighting device are furthermore specified.

Abstract: A lighting device comprising a plurality of components (2) provided for generating radiation, a plurality of row lines (Z1, Z2) and a plurality of column lines (S1, S2, . . . , S5) is specified, wherein the components are in each case electrically conductively connected to a row line and to a column line and the lighting device is provided for the simultaneous operation of at least two components. A lighting arrangement comprising such a lighting device and a method for operating a lighting device are furthermore specified.

Abstract: A lighting device comprising a plurality of components (2) provided for generating radiation, a plurality of row lines (Z1, Z2) and a plurality of column lines (S1, S2, . . . , S5) is specified, wherein the components are in each case electrically conductively connected to a row line and to a column line and the lighting device is provided for the simultaneous operation of at least two components. A lighting arrangement comprising such a lighting device and a method for operating a lighting device are furthermore specified.

Abstract: A light-emitting diode module includes a carrier and a plurality of optoelectronic semiconductor chips mounted on a carrier top and configured to generate primary radiation. The semiconductor chips are arranged in part at a first distance and in part at a second, greater distance from one another. Between the adjacent semiconductor chips arranged at the first distance from one another there is located a radiation-transmissive first filling for optical coupling. Between the adjacent semiconductor chips arranged at the second distance from one another there is located a radiation-opaque second filling for optical isolation.

Abstract: A method for fabricating a field-effect transistor with local source/drain insulation. The method includes forming and patterning a gate stack with a gate layer and a gate dielectric on a semiconductor substrate; forming source and drain depressions at the gate stack in the semiconductor substrate; forming a depression insulation layer at least in a bottom region and along the sidewalls of the source and drain depressions; and filling the at least partially insulated source and drain depressions with a filling layer for realizing source and drain regions.

Abstract: An optoelectronic component includes a housing having a first cavity open toward an upper side of the housing, and a second cavity open toward the upper side of the housing, wherein the first cavity and the second cavity connect by a connecting channel, an optoelectronic semiconductor chip is arranged in the first cavity, a potting material is arranged in a region of the first cavity enclosing the optoelectronic semiconductor chip, a bond wire is arranged between an electrical contact surface of the optoelectronic semiconductor chip and a bond surface of the housing, and the bond surface is arranged in the connecting channel.

Abstract: An optoelectronic arrangement includes a first circuit board, a second circuit board, and an optoelectronic semiconductor chip arranged on the first circuit board, wherein a first electrical contact surface and a second electrical contact surface are formed on a surface of the first circuit board, a first mating contact surface and a second mating contact surface are formed on a surface of the second circuit board, and the first circuit board and the second circuit board connect to one another such that the surface of the first circuit board faces toward the surface of the second circuit board, and the first mating contact surface electrically conductively connects to the first contact surface and the second mating contact surface electrically conductively connects to the second contact surface.

Abstract: A method for fabricating a field-effect transistor with local source/drain insulation. The method includes forming and patterning a gate stack with a gate layer and a gate dielectric on a semiconductor substrate; forming source and drain depressions at the gate stack in the semiconductor substrate; forming a depression insulation layer at least in a bottom region of the source and drain depressions; and filling the at least partially insulated source and drain depressions with a filling layer for realizing source and drain regions.

Abstract: A lighting device comprising a plurality of components (2) provided for generating radiation, a plurality of row lines (Z1, Z2) and a plurality of column lines (S1, S2, . . . , S5) is specified, wherein the components are in each case electrically conductively connected to a row line and to a column line and the lighting device is provided for the simultaneous operation of at least two components. A lighting arrangement comprising such a lighting device and a method for operating a lighting device are furthermore specified.

Abstract: Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor. An explanation is given of, inter alia, tunnel field effect transistors having a thicker gate dielectric in comparison with other transistors on the same integrated circuit arrangement. As an alternative or in addition, said tunnel field effect transistors have gate regions at mutually remote sides of a channel forming region or an interface between the connection regions of the tunnel field effect transistor.

Abstract: A method serves to produce optoelectronic semiconductor components. A leadframe assemblage includes a number of leadframes. The leadframes each comprise at least two leadframe parts and are connected together at least in part via connecting webs. Electrical connections are attached between neighboring leadframes. A potting body connects the leadframes and the leadframe parts mechanically together. At least some of the connecting webs are removed and/or interrupted, the resulting structure is singulated into the semiconductor components.

Abstract: A light-emitting diode module includes a carrier and a plurality of optoelectronic semiconductor chips mounted on a carrier top and configured to generate primary radiation. The semiconductor chips are arranged in part at a first distance and in part at a second, greater distance from one another. Between the adjacent semiconductor chips arranged at the first distance from one another there is located a radiation-transmissive first filling for optical coupling. Between the adjacent semiconductor chips arranged at the second distance from one another there is located a radiation-opaque second filling for optical isolation.

Abstract: A photodiode comprises a semiconductor material having a p-n junction, the p-n junction being located between a first doping region of a first doping type and a second doping region of a second doping type, the second doping region comprising a highly doped layer and a lightly doped layer. A photodiode further comprises a voltage source being capable to apply a variable voltage between the first doping region and the lightly doped layer of the second doping region in order to vary the expansion of a space charge zone of the p-n junction.

Abstract: A method serves to produce optoelectronic semiconductor components. A leadframe assemblage includes a number of leadframes. The leadframes each comprise at least two leadframe parts and are connected together at least in part via connecting webs. Electrical connections are attached between neighboring leadframes. A potting body connects the leadframes and the leadframe parts mechanically together. At least some of the connecting webs are removed and/or interrupted, the resulting structure is singulated into the semiconductor components.