Abstract: In order to achieve defined potentials on unselected column lines, in a read only memory module in which storage elements are arranged between intersecting row lines and column lines, each column line is connected to a fixed auxiliary voltage by way of an auxiliary resistor and the value of the auxiliary voltage is more negative than the voltage on the row line selected during a read operation and the value of the auxiliary resistors is sufficiently large that the current on a selected column line flowing from the auxiliary voltage source by way of the auxiliary resistor into the selected column line is small vis-a-vis the read current flowing in the column line.

Abstract: A circuit arrangement for interference-free storage of information in a programmable read only memory in which the storage elements comprise a circuit element and an interruptable resistor arranged between intersecting row lines and column lines and in which information of one type is stored in a storage element by interrupting the resistor with a flow of a predetermined current therethrough which is large when compared to current flow during a reading operation, employs a regulating transistor per column line whose emitter is connected to the assigned column line, whose collector is connected to an operating voltage, and whose base is connected to a reference voltage. The value of the base reference voltage is selected such that the regulating transistor is rendered conductive only if the voltage on the column line drops below a predetermined value during the interruption of the resistor of a storage element.