Patents by Inventor Juergen Schiele

Juergen Schiele has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power semiconductor component for voltage limiting, arrangement having two power semiconductor components, and a method for voltage limiting
    Patent number: 11973147
    Abstract: A power semiconductor component for voltage limiting includes a rear-side base zone electrically contacted with a rear-side electrode and a front-side base zone electrically contacted with a front-side electrode. At least one switch-on structure is embedded at least into one of the rear-side base zone and the front-side base zone and is electrically contacted by the electrode contacting the embedding base zone. At least one triggering structure is provided as a breakdown structure of a first type, present between the front-side and rear-side electrodes. At least one further triggering structure is provided as a breakdown structure of a second type, present between the front-side and rear-side electrodes. The front-side and rear-side electrodes are each electrically conductively pressure-contacted by an electrically conductive contact plate at least one of which functions as a heat sink for dissipating heat generated in the semiconductor body.
    Type: Grant
    Filed: February 8, 2022
    Date of Patent: April 30, 2024
    Assignee: Infineon Technologies Bipolar GmbH & Co. KG
    Inventors: Juergen Schiele, Reiner Barthelmess, Uwe Kellner-Werdehausen, Sebastian Paul Sommer
  • Power Semiconductor Component for Voltage Limiting, Arrangement Having Two Power Semiconductor Components, and a Method for Voltage Limiting
    Publication number: 20220262960
    Abstract: A power semiconductor component for voltage limiting includes a rear-side base zone electrically contacted with a rear-side electrode and a front-side base zone electrically contacted with a front-side electrode. At least one switch-on structure is embedded at least into one of the rear-side base zone and the front-side base zone and is electrically contacted by the electrode contacting the embedding base zone. At least one triggering structure is provided as a breakdown structure of a first type, present between the front-side and rear-side electrodes. At least one further triggering structure is provided as a breakdown structure of a second type, present between the front-side and rear-side electrodes. The front-side and rear-side electrodes are each electrically conductively pressure-contacted by an electrically conductive contact plate at least one of which functions as a heat sink for dissipating heat generated in the semiconductor body.
    Type: Application
    Filed: February 8, 2022
    Publication date: August 18, 2022
    Inventors: Juergen Schiele, Reiner Barthelmess, Uwe Kellner-Werdehausen, Sebastian Paul Sommer