Abstract: The present invention relates to a method for producing a semi-conductor laminate comprising a first and a second metal oxide layer as well as a dielectric layer, wherein the first metal oxide layer is arranged between the second metal oxide layer and the dielectric layer. The first and second metal oxide layers are formed accordingly from a first and a second liquid phase. The present invention also relates to a semi-conductor laminate that can be obtained from such a method, and to electronic components comprising such a semi-conductor laminate.

Abstract: The present invention relates to formulations comprising a) at least two different ZnO cubanes of which at least one ZnO cubane is present in solid form under SATP conditions and at least one ZnO cubane is present in liquid form under SATP conditions, and b) at least one solvent, to processes for producing semiconductive ZnO layers from these formulations, to the use of the formulations for producing electronic components and to the electronic components themselves.

Abstract: The present invention relates to a liquid phase process for producing indium oxide-containing layers, in which a coating composition preparable from a mixture comprising at least one indium oxide precursor and at least one solvent and/or dispersion medium, in the sequence of points a) to d), a) is applied to a substrate, and b) the composition applied to the substrate is irradiated with electromagnetic radiation, c) optionally dried and d) converted thermally into an indium oxide-containing layer, where the indium oxide precursor is an indium halogen alkoxide of the generic formula InX(OR)2 where R is an alkyl radical and/or alkoxyalkyl radical and X is F, Cl, Br or I and the irradiation is carried out with electromagnetic radiation having significant fractions of radiation in the range of 170-210 nm and of 250-258 nm, to the indium oxide-containing layers producible with the process, and the use thereof.

Abstract: The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium halogen alkoxide of the generic formula InX(OR)2 where R=alkyl radical and/or alkoxyalkyl radical and X=F, Cl, Br or I and at least one solvent or dispersion medium is, in the sequence of points a) to d), in anhydrous atmosphere, a) applied to the substrate, b) the composition applied to the substrate is irradiated with electromagnetic radiation of wavelength ?360 nm and c) optionally dried, and then d) converted thermally to an indium oxide-containing layer, to the layers producible by the process and to the use thereof.

Abstract: The present invention relates to a process for the preparation of indium(III) halodialkoxides of the generic formula InX(OR)2 where X=F, Cl, Br, I and R=alkyl radical, alkoxyalkyl radical, in which a composition (A) comprising an indium trihalide InX3, where X=F, Cl, Br and/or I, and at least one alcohol of the generic formula ROH, where R=alkyl radical, alkyloxyalkyl radical, is reacted with a composition (B) comprising at least one secondary amine of the generic formula R?2NH, where R?=alkyl radical, to the indium(III) halodialkoxides which can be prepared by the process and to their use.

Abstract: The present invention relates to halogenated indium oxo alkoxides of the generic formula In6O2X6(OR)6(R?CH(O)COOR?)2(HOR)x(HNR??2)y where X?F, Cl, Br and/or I, R?C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R??C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R??C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R???C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, x=0 to 10 and y=0 to 10, to processes for preparation thereof and to use thereof.

Abstract: The present invention relates to a liquid phase process for producing indium oxide-containing layers, in which a coating composition preparable from a mixture comprising at least one indium oxide precursor and at least one solvent and/or dispersion medium, in the sequence of points a) to d), a) is applied to a substrate, and b) the composition applied to the substrate is irradiated with electromagnetic radiation, c) optionally dried and d) converted thermally into an indium oxide-containing layer, where the indium oxide precursor is an indium halogen alkoxide of the generic formula InX(OR)2 where R is an alkyl radical and/or alkoxyalkyl radical and X is F, Cl, Br or I and the irradiation is carried out with electromagnetic radiation having significant fractions of radiation in the range of 170-210 nm and of 250-258 nm, to the indium oxide-containing layers producible with the process, and the use thereof.

Abstract: The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium halogen alkoxide of the generic formula InX(OR)2 where R=alkyl radical and/or alkoxyalkyl radical and X=F, Cl, Br or I and at least one solvent or dispersion medium is, in the sequence of points a) to d), in anhydrous atmosphere, a) applied to the substrate, b) the composition applied to the substrate is irradiated with electromagnetic radiation of wavelength ?360 nm and c) optionally dried, and then d) converted thermally to an indium oxide-containing layer, to the layers producible by the process and to the use thereof.

Abstract: The present invention relates to halogenated indium oxo alkoxides of the generic formula In6O2X6(OR)6(R?CH(O)COOR?)2(HOR)x(HNR??2)y where X?F, Cl, Br and/or I, R?C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R??C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R??C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R???C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, x=0 to 10 and y=0 to 10, to processes for preparation thereof and to use thereof.

Abstract: The present invention relates to halogenated indium oxo alkoxides of the generic formula In7O2(OH)(OR)12X4(ROH)x where R=C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- or C7-C15-alkoxyaryl, X=F, Cl, Br, I and x=0 to 10, to processes for preparation thereof and to use thereof.

Abstract: The present invention relates to a process for the preparation of indium(III) halodialkoxides of the generic formula InX(OR)2 where X=F, Cl, Br, I and R=alkyl radical, alkoxyalkyl radical, in which a composition (A) comprising an indium trihalide InX3, where X=F, Cl, Br and/or I, and at least one alcohol of the generic formula ROH, where R=alkyl radical, alkyloxyalkyl radical, is reacted with a composition (B) comprising at least one secondary amine of the generic formula R?2NH, where R?=alkyl radical, to the indium(III) halodialkoxides which can be prepared by the process and to their use.

Abstract: A method for the self-assembly of at least one electrical, electronic or micromechanical component on a substrate, including the steps of: a) providing the substrate, b) applying an adhesive-repelling composition to at least one partial surface of the substrate which does not constitute a target position of the component, followed by a curing step, c) applying an adhesive composition to at least one partial surface of the substrate which constitutes a target position of the component, the partial surface of the substrate which is provided with the adhesive-repelling composition enclosing and adjoining the partial surface of the substrate which is provided with the adhesive composition, and d) applying at least one component to a partial surface coated in accordance with b) or c), in which method the adhesive-repelling composition is a radiation-curing abhesive coating compound, and to an electrical or electronic product which can he produced according to the method.

Abstract: The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium oxo alkoxide of the generic formula MxOy(OR)z[O(R?O)cH]aXb[R?OH]d where x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, M=In, R, R?, R?=organic radical, X?F, Cl, Br, I and at least one solvent are applied to a substrate, optionally dried, and converted to an indium oxide-containing layer, to the layers producible by the process according to the invention and to the use thereof.

Abstract: The invention relates to a liquid-phase method for producing metal oxide-containing layers from nonaqueous solution. In said method, an anhydrous composition containing i) at least one metal oxo-alkoxide of generic formula MxOy(OR)z[O(R?O)cH]aXb[R?OH]d, where M=In, Ga, Sn, and/or Zn, x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, R, R?, R?=organic group, X?F, Cl, Br, I, and ii) at least one solvent is applied to a substrate, is optionally dried, and is converted into a metal oxide-containing layer. The invention also relates to the layers that can be produced using the method of the invention and to the use thereof.

Abstract: The present invention relates to a process for producing semiconductive indium oxide layers, in which a substrate is coated with a liquid, anhydrous composition comprising a) at least one indium alkoxide and b) at least one solvent, optionally dried and thermally treated at temperatures greater than 250° C., to the layers producible by this process, and to the use thereof.

Abstract: The present invention relates to a liquid indium alkoxide-containing composition comprising at least one indium alkoxide and at least three solvents L1, L2 and L3, in which the solvent L1 is selected from the group consisting of ethyl lactate, anisole, tetrahydrofurfuryl alcohol, butyl acetate, ethylene glycol diacetate and ethyl benzoate, and the difference between the boiling points of the two solvents L2 and L3 under SATP conditions is at least 30° C., to processes for preparation thereof and to the use thereof.

Abstract: The present invention relates to white-emitting copolymers which are obtained by a combination of blue-, green- and red-emitting repeating units. The copolymers of the invention display better film formation and an improved efficiency when used in polymeric organic light-emitting diodes compared to materials according to the prior art.

Abstract: The present invention relates to formulations comprising a) at least two different ZnO cubanes of which at least one ZnO cubane is present in solid form under SATP conditions and at least one ZnO cubane is present in liquid form under SATP conditions, and b) at least one solvent, to processes for producing semiconductive ZnO layers from these formulations, to the use of the formulations for producing electronic components and to the electronic components themselves.

Abstract: The present invention relates to white-emitting copolymers which are obtained by a combination of blue-, green- and red-emitting repeating units. The copolymers of the invention display better film formation and an improved efficiency when used in polymeric organic light-emitting diodes compared to materials according to the prior art.

Abstract: Solutions comprising: (i) at least one organic semiconductor, (ii) at least one organic solvent A having a boiling point, and (iii) at least one organic solvent B having a boiling point; wherein the at least one organic semiconductor comprises at least one high molecular weight component, wherein the at least one organic solvent A is a good solvent for the at least one organic semiconductor, wherein the at least one organic solvent B is a poor solvent for the at least one organic semiconductor; and wherein the boiling point of the at least one solvent A is greater than the boiling point of the at least one solvent B; and the use of such solutions in processes for forming organic semiconductor layers on substrates and devices formed by such processes.