Abstract: A semiconductor device includes: a semiconductor body having an active region and an edge termination region between the active region and a side surface of the semiconductor body; a first portion including silicon and nitrogen; a second portion including silicon and nitrogen, the second portion being in direct contact with the first portion; and a front side metallization in contact with the semiconductor body in the active region. The first portion separates the second portion from the semiconductor body. An average silicon content in the first portion is higher than in the second portion. The front side metallization is interposed between the first portion and the semiconductor body in the active region but not in the edge termination region, and/or the first portion and the second portion are both present in the edge termination region but not in the active region.

Abstract: A semiconductor device is proposed. The semiconductor device includes a contact pad structure over a first surface of a semiconductor body. The semiconductor device further includes a dielectric structure lining a sidewall and a boundary area on a top surface of the contact pad structure, wherein the dielectric structure includes a dielectric spacer at the sidewall of the contact pad structure.

Abstract: Described herein are a method and a power semiconductor device produced by the method. The power semiconductor device includes: transistor device structures formed in a semiconductor substrate; a structured metallization layer above the semiconductor substrate; a first passivation over the structured metallization layer; a second passivation on the first passivation; an opening in the first passivation and the second passivation such that a first part of the structured metallization layer has a contact region uncovered by the first passivation and the second passivation and a peripheral region laterally surrounding the contact region and covered by the first passivation and the second passivation; a plating that covers the contact region but not the peripheral region of the first part of the structured metallization layer; and a protective layer separating the peripheral region of the first part of the structured metallization layer from the first passivation.

Abstract: Described herein is a method and a power semiconductor device produced by the method. The method includes: forming a structured metallization layer above a semiconductor substrate; forming a protective layer on the structured metallization layer; forming a first passivation over the structured metallization layer with the protective layer interposed between the first passivation and the structured metallization layer; structuring the first passivation to expose one or more regions of the protective layer; removing the one or more exposed regions of the protective layer to expose one or more parts of the structured metallization layer; and after structuring the first passivation and removing the one or more exposed regions of the protective layer, forming a second passivation on the first passivation and electroless plating the one or more exposed parts of the structured metallization layer.

Abstract: According to various embodiments, a wafer chuck may include at least one support region configured to support a wafer in a receiving area; a central cavity surrounded by the at least one support region configured to support the wafer only along an outer perimeter; and a boundary structure surrounding the receiving area configured to retain the wafer in the receiving area.

Abstract: A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.

Abstract: Described herein is a method and a power semiconductor device produced by the method. The method includes: forming a structured metallization layer above a semiconductor substrate; forming a protective layer on the structured metallization layer; forming a first passivation over the structured metallization layer with the protective layer interposed between the first passivation and the structured metallization layer; structuring the first passivation to expose one or more regions of the protective layer; removing the one or more exposed regions of the protective layer to expose one or more parts of the structured metallization layer; and after structuring the first passivation and removing the one or more exposed regions of the protective layer, forming a second passivation on the first passivation and electroless plating the one or more exposed parts of the structured metallization layer.

Abstract: An embodiment of a semiconductor device includes a semiconductor body having a first main surface. The semiconductor body includes an active device area and an edge termination area at least partly surrounding the active device area. The semiconductor device further includes a contact electrode on the first main surface and electrically connected to the active device area. The semiconductor device further includes a passivation structure on the edge termination area and laterally extending into the active device area. The semiconductor device further includes an encapsulation structure on the passivation structure and covering a first edge of the passivation structure above the contact electrode.

Abstract: A semiconductor device includes: a semiconductor body having an active region and an edge termination region between the active region and a side surface of the semiconductor body; a first portion including silicon and nitrogen; a second portion including silicon and nitrogen, the second portion being in direct contact with the first portion; and a front side metallization in contact with the semiconductor body in the active region. The first portion separates the second portion from the semiconductor body. An average silicon content in the first portion is higher than in the second portion. The front side metallization is interposed between the first portion and the semiconductor body in the active region but not in the edge termination region, and/or the first portion and the second portion are both present in the edge termination region but not in the active region.

Abstract: A semiconductor device includes a semiconductor body and a first portion including silicon and nitrogen. The first portion is in direct contact with the semiconductor body. A second portion including silicon and nitrogen is in direct contact with the first portion. The first portion is between the semiconductor body and the second portion. An average silicon content in the first portion is higher than in the second portion.

Abstract: In various embodiments a method for manufacturing a metallization layer on a substrate is provided, wherein the method may include providing a structured layer of a catalyst material on the substrate, the catalyst material may include a first layer of material arranged over the substrate and a second layer of material arranged over the first layer of material, wherein the structured layer of catalyst material having a first set of regions including the catalyst material over the substrate and a second set of regions free of the catalyst material over the substrate, and forming a plurality of groups of nanotubes over the substrate, each group of the plurality of groups of nanotubes includes a plurality of nanotubes formed over a respective region in the first set of regions.

Abstract: A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.

Abstract: A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.

Abstract: According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a silicon carbide semiconductor body and a metal adhesion and barrier structure between the metal structure and the silicon carbide semiconductor body. The metal adhesion and barrier structure includes a layer comprising titanium and tungsten.

Abstract: According to various embodiments, a wafer chuck may include at least one support region configured to support a wafer in a receiving area; a central cavity surrounded by the at least one support region configured to support the wafer only along an outer perimeter; and a boundary structure surrounding the receiving area configured to retain the wafer in the receiving area.

Abstract: An embodiment of a semiconductor device includes a semiconductor body having a first main surface. The semiconductor body includes an active device area and an edge termination area at least partly surrounding the active device area. The semiconductor device further includes a contact electrode on the first main surface and electrically connected to the active device area. The semiconductor device further includes a passivation structure on the edge termination area and laterally extending into the active device area. The semiconductor device further includes an encapsulation structure on the passivation structure and covering a first edge of the passivation structure above the contact electrode.

Abstract: According to various embodiments, a wafer chuck may include at least one support region configured to support a wafer in a receiving area; a central cavity surrounded by the at least one support region configured to support the wafer only along an outer perimeter; and a boundary structure surrounding the receiving area configured to retain the wafer in the receiving area.

Abstract: A method of forming recess for a trench gate electrode includes forming a trench in a first major surface of a semiconductor substrate, the trench having a base and a side wall extending from the base to the first major surface, forming a first insulating layer on the base and the side wall of the trench, inserting a first conductive material into the trench that at least partially covers the first insulation layer to form a field plate in a lower portion of the trench, applying a second insulating layer to the first major surface and the trench such that the second insulating layer fills the trench and covers the conductive material, removing the second insulating layer from the first major surface and partially removing the second insulating layer from the trench by etching and forming a recess for a gate electrode in the second insulating layer in the trench.

Abstract: A semiconductor device includes a semiconductor body and a first portion including silicon and nitrogen. The first portion is in direct contact with the semiconductor body. A second portion including silicon and nitrogen is in direct contact with the first portion. The first portion is between the semiconductor body and the second portion. An average silicon content in the first portion is higher than in the second portion.

Abstract: According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a silicon carbide semiconductor body and a metal adhesion and barrier structure between the metal structure and the silicon carbide semiconductor body. The metal adhesion and barrier structure includes a layer comprising titanium and tungsten.