Abstract: A method produces semiconductor wafers of monocrystalline silicon. The method includes: pulling a cylindrical section of a single silicon crystal from a melt contained in a crucible, wherein the oxygen concentration in the cylindrical section is not more than 5×1017 atoms/cm3; subjecting the melt to a horizontal magnetic field; rotating the crucible at a rotational velocity and in a rotational direction during the pulling of the cylindrical section of the single crystal; and removing the semiconductor wafers of monocrystalline silicon from the cylindrical section of the single crystal. An amount of rotational velocity, averaged over time, is less than 1 rpm and the rotational direction is changed continually and the amplitude of the rotational velocity before and after the change in the rotational direction is not less than 0.5 rpm and not more than 3.0 rpm.

Abstract: A semiconductor wafer of single-crystal silicon has an oxygen concentration per new ASTM of not less than 5.0×1017 atoms/cm3 and not more than 6.5×1017 atoms/cm3; a nitrogen concentration per new ASTM of not less than 1.0×1013 atoms/cm3 and not more than 1.0×1014 atoms/cm3; a front side having a silicon epitaxial layer wherein the semiconductor wafer has BMDs whose mean size is not more than 10 nm determined by transmission electron microscopy and whose mean density adjacent to the epitaxial layer is not less than 1.0×1011 cm?3, determined by reactive ion etching after having subjected the wafer covered with the epitaxial layer to a heat treatment at a temperature of 780° C. for a period of 3 h and to a heat treatment at a temperature of 600° C. for a period of 10 h.

Abstract: A method produces semiconductor wafers of monocrystalline silicon. The method includes: pulling a cylindrical section of a single silicon crystal from a melt contained in a crucible, wherein the oxygen concentration in the cylindrical section is not more than 5×1017 atoms/cm3; subjecting the melt to a horizontal magnetic field; rotating the crucible at a rotational velocity and in a rotational direction during the pulling of the cylindrical section of the single crystal; and removing the semiconductor wafers of monocrystalline silicon from the cylindrical section of the single crystal. An amount of rotational velocity, averaged over time, is less than 1 rpm and the rotational direction is changed continually and the amplitude of the rotational velocity before and after the change in the rotational direction is not less than 0.5 rpm and not more than 3.0 rpm.