Patents by Inventor Juergen Wisotzki

Juergen Wisotzki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150207022
    Abstract: A process and the required technical arrangement has been developed to produce single crystal solar panels or otherwise used semiconductors, which starts with the raw material to produce single crystal copper ribbons, extruded directly from the melt, with unharmed and optical surfaces onto which in the next unit a silicon or germanium film will be deposited. In the next unit the copper ribbon will be removed from the silicon film, whilst a hard plastic support or ceramic support is mounted, leaving copper contours on the silicon film to be used as electrical conductors or contacts. In the next unit a thin film is deposited of II-VI compounds that enhance the infrared sensitivity of the base film of silicon or germanium up to 56% of the incoming light. This technology guarantees the lowest possible cost in production of the highest possible efficiency of materials for infrared applications and electronic applications.
    Type: Application
    Filed: February 27, 2015
    Publication date: July 23, 2015
    Inventor: Fritz Juergen Wisotzki
  • Publication number: 20110226324
    Abstract: A process and the required technical arrangement has been developed to produce single crystal solar panels or otherwise used semiconductors, which starts with the raw material to produce single crystal copper ribbons, extruded directly from the melt, with unharmed and optical surfaces onto which in the next unit a silicon or germanium film will be deposited. In the next unit the copper ribbon will be removed from the silicon film, whilst a hard plastic support or ceramic support is mounted, leaving copper contours on the silicon film to be used as electrical conductors or contacts. In the next unit a thin film is deposited of II-VI-compounds that enhance the infrared sensitivity of the base film of silicon or germanium up to 56% of the incoming light. This technology guarantees the lowest possible cost in production of the highest possible efficiency of materials for infrared applications and also for electronic applications.
    Type: Application
    Filed: February 12, 2011
    Publication date: September 22, 2011
    Applicant: GRAIN FREE PRODUCTS, INC.
    Inventor: Fritz Jürgen Wisotzki
  • Publication number: 20110200841
    Abstract: A new process and technical arrangement has been established for the production of grain free metal products, which can be extruded directly from the melt, by inserting a seed crystal from a seeding chamber into the opening of the extrusion jet of the melting vessel. The seed crystal will break by contact the surface tension of the liquid metal in the extrusion jet channel, which is slightly undercooled. Upon establishing contact, the temperature at the meeting point of the seed crystal and the liquid metal will be raised by RF-heating to permit the extrusion of the seed crystal backwards, ensuring that metal and seed crystal maintain contact and crystal growth will continue. It has been discovered, that single crystals with the orientation of the seed crystal will continue to grow and to establish high hardness. Speed of extrusion is exceeded to reach only grain free structure in the grown metal.
    Type: Application
    Filed: December 23, 2010
    Publication date: August 18, 2011
    Applicant: Grain Free Products, Inc.
    Inventor: Fritz Juergen Wisotzki
  • Publication number: 20110189325
    Abstract: A new process and technical arrangement to produce in series penetrator rods which have a true single crystal structure consisting of an alloy of 40% by weight Tungsten, 40% by weight Titanium, 20% by weight Osmium. Those single crystal penetrator rods do not break up upon impact on a target, the material sleeves back over the surface whilst the core drives forward and penetrates till the given velocity is used up. This phenomena is only achievable with a single crystal structure and leads to a size and weight reduction because there is not any material lost upon impact on the target as it happens with all penetrator rods which have a grain structure and as they are used today. This alloy as named above has the highest density and highest hardness possible, caused by the crystal growth process and it permits the user to stay out of reach of any opponent not using the same material.
    Type: Application
    Filed: June 9, 2010
    Publication date: August 4, 2011
    Inventor: Juergen Wisotzki
  • Publication number: 20110142184
    Abstract: A new process and arrangement (as shown in FIG. 1) to study nuclear fusion with the aim to achieve a process in which a safer method can be established for the production of electrical power as practiced today in nuclear power plants. The process describes the production of and permits the use of single atomic layers of reactive nuclear materials in a high speed collision which can be brought gradually up in steps to the critical point without any uncontrolled reaction. In the wake of the development it is sought to have a high speed repetitive arrangement which can be used as a low cost and totally safe method of electrical power production, using nuclear materials, without the risk of an uncontrolled reaction or system failure.
    Type: Application
    Filed: October 19, 2010
    Publication date: June 16, 2011
    Inventor: Juergen Wisotzki