Abstract: A maxillofacial prosthetic material is disclosed with a composition based on the methacrylic siloxane resin methacryloxypropyl-terminated polydimethylsiloxane (MPDS) in combination with an amount of filler material, an amount of thermally activated initiator and an amount of crosslinking agent together with an amount of coloring pigment and UV stabilizer added to and dispersed in the polymer prior to cure.

Abstract: Improved permanent soft denture liners are disclosed which consist substantially of an amount of one or more polysiloxanes selected from acryloxyalkyl and methacryloxyalkyl-terminated polydialkylsiloxanes in which the polysiloxane is crosslinked by a material selected from suitable heat, light or chemically activated initiators with or without crosslinking agents. The preferred embodiments are visible light activated and can be applied, fitted, cured and installed in one sitting.

Abstract: A restorative dental composite material consists essentially of an organosilicon monomer selected from a class of siloxane materials which are cross-linkable utilizing visible light sensitive photoinitiators, an amount of filler material, a coupling agent and an amount of activator. An amount of ethylenically unsaturated monomer, an amount of thermally pre-polymerized particle material and/or a pigment material can be added to the composite if indicated. The materials exhibit greatly improved properties including a high degree of conversion, minimum water sorption and good color stability.

Abstract: Organic vapor species ranging from polar to non-polar are removed from the ambient atmosphere by means of a thin microporous membrane medium in conjunction with a non-volatile collecting fluid having an affinity for the species of interest. The collecting fluid may be regenerated if desired.

Abstract: The instant invention provides a method and system for dehumidifying air by microphorous organic hollow fibers having a hygroscopic liquid disposed in the pores thereof for providing a concentration gradient sufficient to provide a continuous water removal mechanism.

Abstract: Highly sensitive positive electron beam resists comprised of copolymers of methacrylic acid (MAA) and t-butyl methacrylate (TBM) are disclosed in which a thin film of high molecular weight MAA/TBM copolymer is applied to a suitable substrate. Prior to exposure, the copolymer is prebaked at a temperature below the decomposition temperature to improve the sensitivity and resolution of the resist. The exposed resist is developed by spraying with a suitable solvent. The positive electron resists produced in accordance with the present invention exhibit a high sensitivity and good submicron resolution.

Abstract: The method of making highly sensitive positive electron beam resists comprised of copolymers of methacrylic acid (MAA) and methacrylonitrile (MCN) is disclosed utilizing a prebaking step in which the copolymer resist in film form on the substrate is prebaked at a temperature below the decomposition temperature to improve the sensitivity of the resist. The positive electron resists produced in accordance with the present invention exhibit a high sensitivity, and high plasma etch resistance which makes them desirable for dry etching techniques in addition to other masking techniques which enable submicron resolution.

Abstract: A process for making highly sensitive positive electron beam resists comprised of copolymers of methacrylic acid (MAA) and methyl .alpha.-chloroacrylate (MCA) is disclosed in which a thin film of high molecular weight MAA/MCA copolymer is applied to a suitable substrate. Prior to exposure, the copolymer is prebaked at a temperature below the decomposition temperature to improve the sensitivity and resolution of the resist. The exposed resist is developed by spraying with a suitable solvent. The positive electron resists produced in accordance with the present invention exhibit a high sensitivity and good submicron resolution.

Abstract: A method of fabricating a negative electron resist pattern for microcircuit is disclosed which combines electron beam resist exposure with dry plasma etch developing. The technique utilizes a coating of a barrier polymer over the negative electron resist film prior to exposure to the electron beam film to prevent vacuum sublimation of the constituents of the negative electron resist film.

Abstract: A method of developing a positive electron resist for delineating a desired integrated circuit pattern upon a circuit substrate is disclosed for a positive resist consisting of a copolymer film of poly (methyl alpha-chloroacrylate-co-methacrylonitrile) utilizing a developer selected from the group consisting of benzonitrile, a mixture of benzonitrile and methyl cellosolve, and a mixture of benzonitrile and methyl ethyl ketone.