Abstract: A method of fabricating a plurality of bulk acoustic wave (BAW) resonators on a single substrate, and the corresponding product, the BAW resonators having substantially different resonant frequencies, the method including the steps of: providing a substrate having an upper facing surface; depositing an isolation structure on the upper facing surface of the substrate; depositing a first metallic layer on the isolation structure, the first metallic layer serving as a bottom electrode; and depositing piezolayer material on the bottom electrode so as to have thicknesses corresponding to each of the different resonant frequencies, each different thickness located in a location where a resonator having a resonant frequency corresponding to the thickness is to be located.

Abstract: A monolithic bulk acoustic wave (BAW) duplexer, and a method for fabricating same, the duplexer having a transmitter section as a first component filter and a receiver section as a second component filter, both component filters fabricated on a single substrate and both including at least one shunt BAW resonator and one series BAW resonator, each BAW resonator including a resonator section atop an isolation structure provided so as to separate the resonator section from the substrate, including: a patterned bottom electrode material for use as the bottom electrode of each of the resonators of the duplexer; a patterned piezoelectric material for use as the piezolayer of each of the resonators of the duplexer; a patterned top electrode material for use as the top electrode of each of the resonators of the duplexer; a tuning layer for the shunt resonator of each of the two component duplexer filters; and a tuning layer for both the series and shunt resonators of one of the two component duplexer filters.

Abstract: A method of fabricating a multi-resonator bulk acoustic wave (BAW) filter and a filter provided by such a method, the filter having a plurality of layers of materials serving as an acoustic mirror for a plurality of resonator sections, each resonator section including at least a top electrode and a bottom electrode sandwiching a piezolayer, the method including the steps of: choosing dielectric materials for some of the layers of materials serving as the acoustic mirror and metallic materials for the others of the layers; and providing at least one of the metallic layers via a fabrication procedure in which the metallic layer is patterned into distinct portions by an etching process that removes enough of the metallic layer between where different resonator sections are to be placed as to provide electrical isolation between the portions of the layer beneath the different resonator sections; thereby providing a multi-resonator BAW filter with reduced capacitive coupling between resonators, compared to the cap

Abstract: A monolithic bulk acoustic wave (BAW) duplexer, and a method for fabricating same, the duplexer having a, transmitter section as a first component filter and a receiver section as a second component filter, both component filters fabricated on a single substrate and both including at least one shunt BAW resonator and one series BAW resonator, each BAW resonator including a resonator section atop an isolation structure provided so as to separate the resonator section from the substrate, including: a patterned bottom electrode material for use as the bottom electrode of each of the resonators of the duplexer; a patterned piezoelectric material for use as the piezolayer of each of the resonators of the duplexer; a patterned top electrode material for use as the top electrode of each of the resonators of the duplexer; a tuning layer for the shunt resonator of each of the two component duplexer filters; and a tuning layer for both the series and shunt resonators of one of the two component duplexer filters.

Abstract: Method (800) for adjusting the center frequency of a balanced filter comprising at least four resonators, comprises the following steps: specifying (801) a nominal center frequency for the balanced filter when connected to a circuitry having a certain nominal impedance; determining (802) the actual center frequency of the balanced filter when connected to a circuitry having a certain actual impedance, comparing (803, 804) the actual center frequency of the filter to the nominal one, and adjusting (805, 806) the impedance ratio between the circuitry and the balanced filter within certain limits based on the comparison. A plurality of balanced filters (1610, 1620, 1630) on a substrate (1600) is characterized in that the total area of bulk acoustic wave resonators in the balanced resonators depends on the position of the balanced filter on the substrate. Further, the balanced filters have substantially the same actual center frequency.

Abstract: A component has a piezoelectric layer, which is arranged between a first lower electrode and a first upper electrode and also a second lower electrode and a second upper electrode. The first lower electrode, the first upper electrode, the second lower electrode and the second upper electrode are in each case structured, the structures of the first upper electrode and the structures of the second upper electrode, and the structures of the first lower electrode and the structures of the second lower electrode respectively engaging in one another. The component is suitable as a filter, transformer, and impedance matcher in high-frequency applications.

Abstract: The invention relates to resonator structures of radio communication apparatus, especially bulk acoustic wave filter structures. According to the invention, a bulk acoustic filter structure is constructed with a lattice configuration, in which two of the filters have a different area than other two for creating very steep passband edges in the frequency response of the filter. Preferably, the filter structure further comprises a second lattice structure for increasing the stopband rejection ratio of the filter structure, and for allowing the use of a simple mechanical structure. The cascaded configuration allows the construction of the filter structure in such a way, that the electrodes of the input and output port are at the same layer, thereby removing the need to make vias in the piezoelectric layer, which results in considerable simplification of the manufacturing process.

Abstract: The invention relates to resonator structures of radio communication apparatus. According to the invention, at least one resonator structure and at least one switch structure are manufactured on the same substrate during the same process. This is especially advantageous when using bridge type BAW resonators and micromechanical switches, since the same process steps which are used for creating the bridge structures, can be used to create the micromechanical switch structure. Integration of switch structures and resonators on the same substrate allows the manufacture of very compact filter and resonator structures needed for multi-system mobile communication means. According to another aspect of the invention a special property of BAW resonators is utilized, namely that BAW resonators can be integrated on substrates which are commonly used for active circuitry, such as silicon (Si) and gallium arsenide (GaAs) surfaces.

Abstract: The invention relates to resonator structures of radio communication apparatus. According to the invention, a micromechanical switch and a resonator are realized in a single combined structure. Combination of switch and resonator structures allows the manufacture of very compact filter and resonator structures needed for multi-system mobile communication means.

Abstract: There is provided a Multi-pole Bulk Acoustic Wave Resonator-Stacked Crystal Filter (Multi-pole BAWR-SCF) filtering circuit or device. In one embodiment the Multi-pole BAWR-SCF circuit comprises a first pair of ports, a second pair of ports, a first lead that is coupled between a first and a second one of the first pair of ports, and a second lead that is coupled between a first and a second one of the second pair of ports. The Multi-pole BAWR-SCF circuit also comprises at least one BAW resonator that is coupled in series in the first lead, and at least one Stacked Crystal Filter (SCF). The SCF has first and second terminals that are coupled in the first lead, and a third terminal that is coupled in the second lead. The Multi-pole BAWR-SCF circuit further comprises a plurality of impedance inverting elements and at least one inductive element.

Abstract: There is provided a Bulk Acoustic Wave Resonator-Stacked Crystal Filter (BAWR-SCF) filtering circuit or device. The BAWR-SCF circuit comprises a first pair of ports, a second pair of ports, a first lead that is connected between a first and a second one of the first pair of ports, and a second lead that is connected between a first and a second one of the second pair of ports. The BAWR-SCF circuit also comprises a first BAW resonator connected in series in the first lead, and a second BAW resonator connected between the first and second leads. The BAWR-SCF further comprises a Stacked Crystal Filter (SCF) having first and second terminals connected in the first lead between the first BAW resonator and the second one of the first pair of ports. The SCF also has a third terminal that is connected to a node of the second lead.

Abstract: A Bulk Acoustic Wave (BAW) filter, comprising at least one resonator structure that is disposed over a substrate, and an acoustic mirror that is disposed over the resonator structure. The acoustic mirror includes a plurality of layers. The acoustic mirror substantially isolates acoustic vibrations produced by the resonator from reaching beyond an upper surface of the acoustic mirror. The acoustic mirror also prevents environmental contaminants from coming into contact with the resonator. Also disclosed are surface-mountable BAW components.

Abstract: A method for amplitude modulating signals, and a circuit that operates in accordance with the method. The method includes a first step of applying a modulating low frequency signal having a time-varying voltage to a tunable resonator. The tunable resonator exhibits parallel and series resonances at frequencies which shift as a function of the time-varying voltage. A second step includes applying an RF carrier signal having a frequency that is between the parallel resonant frequency and the series resonant frequency to the tunable resonator. In response thereto, the tunable resonator causes the RF carrier signal to be attenuated as a function of the time-varying voltage of the modulating low frequency signal. Also provided is a method for phase modulating signals, and a circuit that operates in accordance therewith. A first step includes applying a modulating low frequency signal having a time-varying voltage to a tunable resonator.