Abstract: Methods are provided for forming uniformly thin layers in magnetic devices. Atomic layer deposition (ALD) can produce layers that are uniformly thick on an atomic scale. Magnetic tunnel junction dielectrics, for example, can be provided with perfect uniformity in thickness of 4 monolayers or less. Furthermore, conductive layers, including magnetic and non-magnetic layers, can be provided by ALD without spiking and other non-uniformity problems. The disclosed methods include forming metal oxide layers by multiple cycles of ALD and subsequently reducing the oxides to metal. The oxides tend to maintain more stable interfaces during formation.

Abstract: A structure and method of fabricating a magnetic read head, comprises forming a fill layer for a magnetic read head gap using atomic layer deposition (ALD). The fill layer comprises an insulator, preferably aluminum oxide, aluminum nitride, mixtures thereof and layered structures thereof. Materials having higher thermal conductivity than aluminum oxide, such as berylium oxide and boron nitride, can also be employed in layers within an aluminum oxide structure. The thickness of the ALD-formed head gap fill layer is between approximately 5 nm and 100 nm, preferably between approximately 10 nm and 40 nm.

Abstract: A structure and method of fabricating a magnetic read head, comprises forming a fill layer for a magnetic read head gap using atomic layer deposition (ALD). The fill layer comprises an insulator, preferably aluminum oxide, aluminum nitride, mixtures thereof and layered structures thereof. Materials having higher thermal conductivity than aluminum oxide, such as berylium oxide and boron nitride, can also be employed in layers within an aluminum oxide structure. The thickness of the ALD-formed head gap fill layer is between approximately 5 nm and 100 &mgr;m, preferably between approximately 10 nm and 40 nm.

Abstract: Methods are provided for forming uniformly thin layers in magnetic devices. Atomic layer deposition (ALD) can produce layers that are uniformly thick on an atomic scale. Magnetic tunnel junction dielectrics, for example, can be provided with perfect uniformity in thickness of 4 monolayers or less. Furthermore, conductive layers, including magnetic and non-magnetic layers, can be provided by ALD without spiking and other non-uniformity problems. The disclosed methods include forming metal oxide layers by multiple cycles of ALD and subsequently reducing the oxides to metal. The oxides tend to maintain more stable interfaces during formation.