Abstract: A microelectromechanical element is provided with patterned regions of wafer material and glass material. The regions of glass material include at least a first glass region and a second glass region formed of a first glass material and a second glass material, respectively. The first glass material enables anodic bonding with the wafer material. An alkali metal content of the second glass material is less than an alkali metal content of the first glass material.

Abstract: A sensor device and a method for manufacturing the sensor device. The sensor device is equipped with an impact element that includes an inner part of dielectric bulk material and an outer part of diamond-like coating material. The inner part is made to be lower at the edges than in the middle, and the outer part is formed of a diamond-like coating layer that covers the inner part. The DLC coated impact element is mechanically more robust than the rectangular prior art structures. Furthermore, the tapered form of the impact element improves conductivity of the DLC coating such that discharge of static buildup in the impact element is effectively enabled.

Abstract: A sensor device and a method for manufacturing the sensor device. The sensor device is equipped with an impact element that includes an inner part of dielectric bulk material and an outer part of diamond-like coating material. The inner part is made to be lower at the edges than in the middle, and the outer part is formed of a diamond-like coating layer that covers the inner part. The DLC coated impact element is mechanically more robust than the rectangular prior art structures. Furthermore, the tapered form of the impact element improves conductivity of the DLC coating such that discharge of static buildup in the impact element is effectively enabled.

Abstract: A method of manufacturing a sensor including forming an insulating layer on top of a conductive substrate, and forming a conducting electrode on top of the insulating layer. Further, the insulating layer is formed to include support areas formed at edges of the conducting electrode and a partial area formed under the conducting electrode, and a thickness (d2) of the partial area of the insulating layer is less than a thickness (d1) of the support areas of the insulating area.

Abstract: The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer (10) is formed by etched opening at least one spring element configuration (7) and at least one seismic mass (8) connected to said spring element configuration (7). According to the invention, the openings and trenches (8) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration (7) is based on wet etch methods.

Abstract: The invention relates to measuring devices used for the measuring of acceleration, and specifically to capacitive acceleration sensors. The capacitive acceleration sensor according to the present invention comprises a pair of electrodes composed of a movable electrode (4) and a stationary electrode (5), and, related to the pair of electrodes, an isolator protrusion having a special coating. The invention provides an improved, more durable sensor structure, which withstands wear caused by overload situations better than earlier structures.