Abstract: A method for forming a semiconductor structure comprising a silicon-on-insulator layer structure with crystalline silicon oxide SiOx as the insulator material comprises: providing a crystalline silicon substrate having a substantially clean deposition surface in a vacuum chamber; heating the silicon substrate to an oxidation temperature To in the range of 550 to 1200 ° C.; supplying, while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure Po in the range of 1·10?8 to 1·10?4 mbar in the vacuum chamber, molecular oxygen O2 into the vacuum chamber with an oxygen dose Do in the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer and a crystalline silicon top layer. Related semiconductor structures are described.

Abstract: In a process and an arrangement for directing a papermaking pulp towards a regulated outlet (9), accept from successive cleaning stages (6, 14, 20) is totally or partly led towards the outlet (9) while excess accept is led in the opposite direction to the inlet (5) of the preceding cleaning stage (6). For feeding of a forming wire, a common base pipe (8) for collecting accept extends between the outlet (9) and a feeding (3) for fresh pulp, while reject pipes (11, 18) lead to the next cleaning stage (14, 20).

Abstract: The invention relates to a process for directing a papermaking pulp towards a regulated outlet (9). Accept from successively arranged cleaning stages (6, 14, 20) is lead towards the outlet (9), while the respective rejects are lead to the inlet of the succeeding cleaning stage (14, 20). Depending on the operational situation, the accept from the cleaning stages (6, 14, 20) is totally or partly lead towards the outlet (9) while excess accept is lead in the opposite direction to the inlet (5) of the preceding cleaning stage (6). The invention also relates to an arrangement for the feeding of a forming wire, wherein a collecting accept pipe (8) is provided for extending between the outlet (9) and a feeding (3) for fresh pulp, while reject pipes (11, 18) lead to the next cleaning stage (14, 20).