Patents by Inventor Juhani Niskanen
Juhani Niskanen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20220367173Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.Type: ApplicationFiled: July 21, 2022Publication date: November 17, 2022Inventors: Suvi P. Haukka, Elina Färm, Raija H. Matero, Eva E. Tois, Hidemi Suemori, Antti Juhani Niskanen, Sung-Hoon Jung, Petri Räisänen
-
Patent number: 11430656Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.Type: GrantFiled: November 29, 2016Date of Patent: August 30, 2022Assignee: ASM IP HOLDING B.V.Inventors: Suvi P. Haukka, Elina Färm, Raija H. Matero, Eva E. Tois, Hidemi Suemori, Antti Juhani Niskanen, Sung-Hoon Jung, Petri Räisänen
-
Patent number: 11367613Abstract: Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.Type: GrantFiled: August 7, 2020Date of Patent: June 21, 2022Assignee: ASM IP HOLDING B.V.Inventors: Shang Chen, Viljami Pore, Ryoko Yamada, Antti Juhani Niskanen
-
Publication number: 20220178025Abstract: A gas-phase chemical reactor, a system including the reactor, and methods of using the reactor and system are disclosed. An exemplary reactor includes a reaction chamber and is configured to provide a precursor within the reaction chamber for a soak period—e.g., a period wherein a supply of the precursor to the reaction chamber is ceased and before purging of the reaction chamber begins. This allows relatively high residence times, relatively high partial pressures of the precursor(s) and/or a relatively high absolute pressure to be obtained within the reaction chamber during substrate processing.Type: ApplicationFiled: February 28, 2022Publication date: June 9, 2022Inventor: Antti Juhani Niskanen
-
Patent number: 11286562Abstract: A gas-phase chemical reactor, a system including the reactor, and methods of using the reactor and system are disclosed. An exemplary reactor includes a reaction chamber and is configured to provide a precursor within the reaction chamber for a soak period—e.g., a period wherein a supply of the precursor to the reaction chamber is ceased and before purging of the reaction chamber begins. This allows relatively high residence times, relatively high partial pressures of the precursor(s) and/or a relatively high absolute pressure to be obtained within the reaction chamber during substrate processing.Type: GrantFiled: June 8, 2018Date of Patent: March 29, 2022Assignee: ASM IP Holding B.V.Inventor: Antti Juhani Niskanen
-
Patent number: 11062914Abstract: Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100° C. to 400° C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.Type: GrantFiled: August 7, 2020Date of Patent: July 13, 2021Assignee: ASM IP Holding B.V.Inventors: Antti Juhani Niskanen, Jaakko Anttila
-
Publication number: 20200365392Abstract: Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.Type: ApplicationFiled: August 7, 2020Publication date: November 19, 2020Inventors: Shang Chen, Viljami Pore, Ryoko Yamada, Antti Juhani Niskanen
-
Publication number: 20200365416Abstract: Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100° C. to 400° C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.Type: ApplicationFiled: August 7, 2020Publication date: November 19, 2020Inventors: Antti Juhani Niskanen, Jaakko Anttila
-
Patent number: 10793946Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.Type: GrantFiled: November 6, 2019Date of Patent: October 6, 2020Assignee: ASM IP Holding B.V.Inventors: Delphine Longrie, Antti Juhani Niskanen, Han Wang, Qi Xie, Jan Willem Maes, Shang Chen, Toshiharu Watarai, Takahiro Onuma, Dai Ishikawa, Kunitoshi Namba
-
Publication number: 20200291511Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.Type: ApplicationFiled: November 6, 2019Publication date: September 17, 2020Inventors: Delphine Longrie, Antti Juhani Niskanen, Han Wang, Qi Xie, Jan Willem Maes, Shang Chen, Toshiharu Watarai, Takahiro Onuma, Dai Ishikawa, Kunitoshi Namba
-
Patent number: 10741386Abstract: Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.Type: GrantFiled: April 11, 2019Date of Patent: August 11, 2020Assignee: ASM IP Holding B.V.Inventors: Shang Chen, Viljami Pore, Ryoko Yamada, Antti Juhani Niskanen
-
Patent number: 10741411Abstract: Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100° C. to 400° C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.Type: GrantFiled: September 27, 2018Date of Patent: August 11, 2020Assignee: ASM IP Holding B.V.Inventors: Antti Juhani Niskanen, Jaakko Anttila
-
Publication number: 20190376180Abstract: A gas-phase chemical reactor, a system including the reactor, and methods of using the reactor and system are disclosed. An exemplary reactor includes a reaction chamber and is configured to provide a precursor within the reaction chamber for a soak period—e.g., a period wherein a supply of the precursor to the reaction chamber is ceased and before purging of the reaction chamber begins. This allows relatively high residence times, relatively high partial pressures of the precursor(s) and/or a relatively high absolute pressure to be obtained within the reaction chamber during substrate processing.Type: ApplicationFiled: June 8, 2018Publication date: December 12, 2019Inventor: Antti Juhani Niskanen
-
Patent number: 10480064Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.Type: GrantFiled: July 20, 2018Date of Patent: November 19, 2019Assignee: ASM IP Holding B.V.Inventors: Delphine Longrie, Antti Juhani Niskanen, Han Wang, Qi Xie, Jan Willem Maes, Shang Chen, Toshiharu Watarai, Takahiro Onuma, Dai Ishikawa, Kunitoshi Namba
-
Publication number: 20190295838Abstract: Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.Type: ApplicationFiled: April 11, 2019Publication date: September 26, 2019Inventors: Shang Chen, Viljami Pore, Ryoko Yamada, Antti Juhani Niskanen
-
Patent number: 10262854Abstract: Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.Type: GrantFiled: September 15, 2017Date of Patent: April 16, 2019Assignee: ASM IP Holding B.V.Inventors: Shang Chen, Viljami Pore, Ryoko Yamada, Antti Juhani Niskanen
-
Publication number: 20190103285Abstract: Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100° C. to 400° C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.Type: ApplicationFiled: September 27, 2018Publication date: April 4, 2019Inventors: Antti Juhani Niskanen, Jaakko Anttila
-
Publication number: 20190055643Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.Type: ApplicationFiled: July 20, 2018Publication date: February 21, 2019Inventors: Delphine Longrie, Antti Juhani Niskanen, Han Wang, Qi Xie, Jan Willem Maes, Shang Chen, Toshiharu Watarai, Takahiro Onuma, Dai Ishikawa, Kunitoshi Namba
-
Patent number: 10115603Abstract: Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100° C. to 400° C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.Type: GrantFiled: October 21, 2016Date of Patent: October 30, 2018Assignee: ASM IP HOLDING B.V.Inventors: Antti Juhani Niskanen, Jaakko Anttila
-
Patent number: 10041166Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.Type: GrantFiled: October 27, 2017Date of Patent: August 7, 2018Assignee: ASM IP Holding B.V.Inventors: Delphine Longrie, Antti Juhani Niskanen, Han Wang, Qi Xie, Jan Willem Maes, Shang Chen, Toshiharu Watarai, Takahiro Onuma, Dai Ishikawa, Kunitoshi Namba