Patents by Inventor Juhani Vayrynen

Juhani Vayrynen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for oxidizing a substrate surface using oxygen
    Patent number: 10256290
    Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.
    Type: Grant
    Filed: November 2, 2017
    Date of Patent: April 9, 2019
    Assignee: Comptek Solutions Oy
    Inventors: Pekka Laukkanen, Jouko Lang, Marko Punkkinen, Marjukka Tuominen, Veikko Tuominen, Johnny Dahl, Juhani Vayrynen
  • METHOD FOR TREATING A SUBSTRATE AND A SUBSTRATE
    Publication number: 20180069074
    Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.
    Type: Application
    Filed: November 2, 2017
    Publication date: March 8, 2018
    Applicant: Comptek Solutions Oy
    Inventors: Pekka LAUKKANEN, Jouko LANG, Marko PUNKKINEN, Marjukka TUOMINEN, Veikko TUOMINEN, Johnny DAHL, Juhani VAYRYNEN
  • Method for oxidizing a substrate surface using oxygen
    Patent number: 9837486
    Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.
    Type: Grant
    Filed: September 15, 2015
    Date of Patent: December 5, 2017
    Assignee: Comptek Solutions Oy
    Inventors: Pekka Laukkanen, Jouko Lang, Marko Punkkinen, Marjukka Tuominen, Veikko Tuominen, Johnny Dahl, Juhani Vayrynen
  • Method for treating a substrate and a substrate
    Patent number: 9269763
    Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.
    Type: Grant
    Filed: November 8, 2011
    Date of Patent: February 23, 2016
    Assignee: Turun Yliopisto
    Inventors: Pekka Laukkanen, Jouko Lang, Marko Punkkinen, Marjukka Tuominen, Veikko Tuominen, Johnny Dahl, Juhani Vayrynen
  • METHOD FOR TREATING A SUBSTRATE AND A SUBSTRATE
    Publication number: 20160049295
    Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.
    Type: Application
    Filed: September 15, 2015
    Publication date: February 18, 2016
    Applicant: TURUN YLIOPISTO
    Inventors: Pekka LAUKKANEN, Jouko LANG, Marko PUNKKINEN, Marjukka TUOMINEN, Veikko TUOMINEN, Johnny DAHL, Juhani VAYRYNEN
  • METHOD FOR TREATING A SUBSTRATE AND A SUBSTRATE
    Publication number: 20130214331
    Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.
    Type: Application
    Filed: November 8, 2011
    Publication date: August 22, 2013
    Applicant: TURUN YLIOPISTO
    Inventors: Pekka Laukkanen, Jouko Lang, Marko Punkkinen, Marjukka Tuominen, Veikko Tuominen, Johnny Dahl, Juhani Vayrynen