Patents by Inventor Juhee YEO

Juhee YEO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ETCHANT COMPOSITION AND METHOD
    Publication number: 20230383185
    Abstract: Compositions and methods for selectively etching titanium nitride, cobalt, or a combination thereof. The compositions and methods generally leave molybdenum and other materials present unaffected by the process. The process can achieve a high etching rate, and can provide uniform recess top and bottom layers in patterns.
    Type: Application
    Filed: May 25, 2023
    Publication date: November 30, 2023
    Inventors: JeongYeol Yang, Hyungpyo Hong, Juhee Yeo, SeongJin Hong, WonLae Kim
  • METHOD AND COMPOSITION FOR ETCHING MOLYBDENUM
    Publication number: 20230030323
    Abstract: An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 ?/min.
    Type: Application
    Filed: September 21, 2022
    Publication date: February 2, 2023
    Inventors: Atanu K. Das, Daniela White, Emanuel I. Cooper, Eric Hong, JeongYeol Yang, Juhee Yeo, Michael L. White, SeongJin Hong, SeungHyun Chae, Steven A. Lippy, WonLae Kim
  • COMPOSITIONS AND METHODS FOR SELECTIVELY ETCHING SILICON NITRIDE FILMS
    Publication number: 20220389314
    Abstract: The invention relates to compositions and methods for the selective wet etching of a surface of a microelectronic device that contains both silicon nitride (SiN) and polysilicon. An etching composition as described comprises phosphoric acid, certain polysilicon corrosion inhibitors, along with certain silanes. The combination of the two components was found to greatly improve the selectivity of the silicon nitride etching composition in the presence of polysilicon.
    Type: Application
    Filed: May 20, 2022
    Publication date: December 8, 2022
    Inventors: Steven M. Bilodeau, Claudia Yevenes, Juhee Yeo
  • Method and composition for etching molybdenum
    Patent number: 11492709
    Abstract: An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 ?/min.
    Type: Grant
    Filed: April 14, 2021
    Date of Patent: November 8, 2022
    Assignee: ENTEGRIS, INC.
    Inventors: Atanu K. Das, Daniela White, Emanuel I. Cooper, Eric Hong, JeongYeol Yang, Juhee Yeo, Michael L. White, SeongJin Hong, SeungHyun Chae, Steven A. Lippy, WonLae Kim
  • SELECTIVE REMOVAL OF METAL OXIDE HARD MASKS
    Publication number: 20220208553
    Abstract: Compositions useful for the selective etching, i.e., removal, of metal oxide hard masks such as zirconium oxide and hafnium oxide, often used as hard masks in microelectronic devices, in the presence of other materials such as polysilicon, silicon dioxide, silicon nitride, and tungsten are provided.
    Type: Application
    Filed: December 22, 2021
    Publication date: June 30, 2022
    Inventors: SeungHyun Chae, SeongJin Hong, Eric Hong, Juhee Yeo, WonLae Kim, JeongYeol Yang
  • NITRIDE ETCHANT COMPOSITION AND METHOD
    Publication number: 20220049160
    Abstract: Provided are compositions and methods for selectively etching titanium nitride, generally leaving molybdenum present unaffected by the process, as well as any aluminum oxide, silicon dioxide, and polysilicon which may be present on the device. In general, the compositions of the invention were able to achieve titanium nitride etch rates exceeding 3.5 ?/minute, thereby providing uniform recess top and bottom layers in patterns.
    Type: Application
    Filed: August 13, 2021
    Publication date: February 17, 2022
    Inventors: Eric HONG, SeongJin HONG, WonLae KIM, JeongYeol YANG, SeungHyun CHAE, JuHee YEO
  • METHOD AND COMPOSITION FOR ETCHING MOLYBDENUM
    Publication number: 20210324525
    Abstract: An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 ?/min.
    Type: Application
    Filed: April 14, 2021
    Publication date: October 21, 2021
    Inventors: Atanu K. DAS, Daniela WHITE, Emanuel I. COOPER, Eric HONG, JeongYeol YANG, Juhee YEO, Michael L. WHITE, SeongJin HONG, SeungHyun CHAE, Steven A. LIPPY, WonLae KIM