Abstract: Method for production of diamond-like carbon film having semiconducting properties comprises preparing a boron-doped diamond-like carbon (B-DLC) thin film on a silicon substrate through a radio frequency magnetron sputtering process, wherein a composite target material formed by inserting boron tablet as a dopant source in a graphite target is used. After forming a boron-containing diamond-like carbon film, the thin film is annealed at a temperature of 500° C. and kept at this temperature for 10 minutes, and determine its carrier concentration and resistivity. Thus demonstrated that the polarity of said boron-doped diamond-like carbon film is p-type semiconductor characteristic. Carrier concentration can be up to 1.3×1018 cm-3, and its resistivity is about 0.6 ?-cm; consequently.