Patents by Inventor Jui-Cheng Huang

Jui-Cheng Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11014877
    Abstract: An ether-bridged dication is provided with two monovalent cations bonded via a carbon chain having ether group(s). The ether-bridged dication, monovalent cations, and anions are contained together within an ionic liquid electrolyte which is applied to a charge storage device. The ether-bridged dication, the ionic liquid electrolyte, and the charge storage device have operational abilities at room temperatures or below, and a reachable working potential of 3.5 V.
    Type: Grant
    Filed: October 23, 2019
    Date of Patent: May 25, 2021
    Assignee: NATIONAL CHENG KUNG UNIVERSITY
    Inventors: Hsisheng Teng, I-wen Sun, Hsin-Chieh Huang, Yung-Che Yen, Jui-Cheng Chang
  • Publication number: 20210148856
    Abstract: A biologically sensitive field effect transistor includes a substrate, a first control gate and a second control gate. The substrate has a first side and a second side opposite to the first side, a source region and a drain region. The first control gate is disposed on the first side of the substrate. The second control gate is disposed on the second side of the substrate. The second control gate includes a sensing film disposed on the second side of the substrate. A voltage biasing between the source region and the second control gate is smaller than a threshold voltage of the second control gate.
    Type: Application
    Filed: December 28, 2020
    Publication date: May 20, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Jie HUANG, Jui-Cheng HUANG, Cheng-Hsiang HSIEH
  • Patent number: 11012653
    Abstract: A method of image sensor apparatus includes: providing pixel array having pixel units arranged in M rows and N columns; providing N parallel column readout circuits each being arranged for reading out pixel data of one corresponding column; disposing a horizontal shift register in row direction coupled to the N parallel column readout circuits, to receive a pulse signal and a clock signal, sequentially shift a phase of the pulse signal according to the clock signal, and scan a corresponding column according to the shifted phase of the pulse signal; and using a column select circuit having N latches to receive a power down digital control signal transmitted from a microcontroller wherein the power down digital control signal is used to disable at least one column readout circuit to enable and select a portion of the set of N parallel column readout circuits.
    Type: Grant
    Filed: October 14, 2019
    Date of Patent: May 18, 2021
    Assignee: PixArt Imaging Inc.
    Inventors: Chia-Chi Kuo, Jui-Te Chiu, Han-Chi Liu, Wei-Chia Huang, Yi-Cheng Chiu, Kuan Tang
  • Patent number: 11002704
    Abstract: Biosensor devices and methods of forming the same are provided. A cavity is formed in a substrate and is configured to receive one or more charged molecules. A transistor is formed in the substrate and includes a source region, a drain region, and a channel region that are spatially separated from the cavity in a lateral direction. A gate of the transistor is disposed below the cavity and extends between the cavity and the source, drain, and channel regions. A voltage potential of the gate is based on a number of the charged molecules in the cavity.
    Type: Grant
    Filed: August 31, 2016
    Date of Patent: May 11, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Tung-Tsun Chen, Chien-Kuo Yang, Jui-Cheng Huang, Mark Chen, Ta-Chuan Liao, Cheng-Hsiang Hsieh
  • Publication number: 20210116413
    Abstract: A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.
    Type: Application
    Filed: December 28, 2020
    Publication date: April 22, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jui-Cheng HUANG, Yi-Hsien CHANG, Chin-Hua WEN, Chun-Ren CHENG, Shih-Fen HUANG, Tung-Tsun CHEN, Yu-Jie HUANG, Ching-Hui LIN, Sean CHENG, Hector CHANG
  • Publication number: 20210109059
    Abstract: An on-chip heater in a concentric rings configuration having non-uniform spacing between heating elements provides improved radial temperature uniformity and low power consumption compared to circular or square heating elements. On-chip heaters are suitable for integration and use with on-chip sensors that require tight temperature control.
    Type: Application
    Filed: November 30, 2020
    Publication date: April 15, 2021
    Applicant: Taiwan Semiconductor manufacturing Co., Ltd.
    Inventors: Tung-Tsun CHEN, Jui-Cheng Huang, Kun-Lung Chen, Cheng-Hsiang Hsieh
  • Patent number: 10876997
    Abstract: A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.
    Type: Grant
    Filed: July 27, 2017
    Date of Patent: December 29, 2020
    Inventors: Jui-Cheng Huang, Yi-Hsien Chang, Chin-Hua Wen, Chun-Ren Cheng, Shih-Fen Huang, Tung-Tsun Chen, Yu-Jie Huang, Ching-Hui Lin, Sean Cheng, Hector Chang
  • Patent number: 10876998
    Abstract: A biologically sensitive field effect transistor includes a substrate, a first control gate and a second control gate. The substrate has a first side and a second side opposite to the first side, a source region and a drain region. The first control gate is disposed on the first side of the substrate. The second control gate is disposed on the second side of the substrate. The second control gate includes a sensing film disposed on the second side of the substrate. A voltage biasing between the source region and the second control gate is smaller than a threshold voltage of the second control gate.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: December 29, 2020
    Inventors: Yu-Jie Huang, Jui-Cheng Huang, Cheng-Hsiang Hsieh
  • Patent number: 10868559
    Abstract: A readout circuit that includes an amplifier circuitry, an analog-to-digital converter, a feedback circuit and a control logic is introduced. The amplifier circuitry may receive and amplify a differential signal that is obtained according to an input signal and a feedback signal to generate an amplified signal. The analog-to-digital converter is configured to convert the amplified signal to generate a n-bit digital code, wherein n is a positive integer. The feedback circuit is configured to search and generate a m-bit digital code based on a value of the n-bit digital code and convert the m-bit digital code to generate the feedback signal, wherein m is a positive integer. The control logic is coupled to the analog-to-digital converter and the feedback circuit, and configured to control the analog-to-digital converter and the feedback circuit. A multi-bit digital output of the readout circuit is generated according to the n-bit digital code and the m-bit digital code.
    Type: Grant
    Filed: January 16, 2020
    Date of Patent: December 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Jie Huang, Jui-Cheng Huang
  • Patent number: 10866209
    Abstract: A microfluidic system includes a semiconductor substrate having a first surface and an opposite, parallel second surface, a first bioFET sensor and a second bioFET sensor. An isolation layer is disposed on the second surface of the semiconductor substrate and has a first opening over the first bioFET sensor and a second opening over the second bioFET sensor. An interface layer is disposed in at least each of the first opening and the second opening. The system includes a readout circuit having a differential amplifier designed to measure a difference between signals associated with the first bioFET sensor and the second bioFET sensor. The system also includes a microfluidic network designed to deliver fluid to the interface layer disposed in each of the first opening and the second opening.
    Type: Grant
    Filed: December 9, 2019
    Date of Patent: December 15, 2020
    Inventors: Allen Timothy Chang, Jui-Cheng Huang, Tung-Tsun Chen, Yu-Jie Huang, Penny Hsiao
  • Patent number: 10852271
    Abstract: An on-chip heater in a concentric rings configuration having non-uniform spacing between heating elements provides improved radial temperature uniformity and low power consumption compared to circular or square heating elements. On-chip heaters are suitable for integration and use with on-chip sensors that require tight temperature control.
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: December 1, 2020
    Inventors: Tung-Tsun Chen, Jui-Cheng Huang, Kun-Lung Chen, Cheng-Hsiang Hsieh
  • Publication number: 20200371059
    Abstract: An apparatus including an integrated reference electrode and a fluid dispenser is described. The reference electrode includes a body and a tip. The fluid dispenser at least partially surrounds the tip of the reference electrode and includes an inlet, a chamber, and an outlet. The fluid dispenser is configured to receive a fluid sample from the inlet to the chamber and form a droplet of the fluid sample through the outlet so that the droplet is in fluidic contact with the tip of the reference electrode and associated with a known potential determined by the reference electrode.
    Type: Application
    Filed: August 10, 2020
    Publication date: November 26, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chin-Hua WEN, Jui-Cheng HUANG
  • Patent number: 10845450
    Abstract: A device includes a first biosensor of a biosensor array; a second biosensor of a biosensor array; a readout circuit electrically connected to the biosensor array; a decoder electrically connected to the biosensor array; a voltage generator electrically connected to the biosensor array; and a decision system electrically connected to the voltage generator and the readout circuit.
    Type: Grant
    Filed: August 30, 2017
    Date of Patent: November 24, 2020
    Inventors: Chin-Hua Wen, Jui-Cheng Huang, Yi-Shao Liu, Chun-Wen Cheng, Tung-Tsun Chen
  • Publication number: 20200348282
    Abstract: A semiconductor device includes a circuit layer and a nanopore layer. The nanopore layer is formed on the circuit layer and is formed with a pore therethrough. The circuit layer includes a circuit unit configured to drive a biomolecule through the pore and to detect a current associated with a resistance of the nanopore layer, whereby a characteristic of the biomolecule can be determined using the currents detected by the circuit unit.
    Type: Application
    Filed: July 8, 2020
    Publication date: November 5, 2020
    Inventors: Kun-Lung Chen, Tung-Tsun Chen, Cheng-Hsiang Hsieh, Yu-Jie Huang, Jui-Cheng Huang
  • Publication number: 20200333320
    Abstract: A semiconductor device includes a circuit layer and a nanopore layer. The nanopore layer is formed on the circuit layer and is formed with a pore therethrough. The circuit layer includes a circuit unit configured to drive a biomolecule through the pore and to detect a current associated with a resistance of the nanopore layer, whereby a characteristic of the biomolecule can be determined using the currents detected by the circuit unit.
    Type: Application
    Filed: June 11, 2020
    Publication date: October 22, 2020
    Inventors: Kun-Lung Chen, Tung-Tsun Chen, Cheng-Hsiang Hsieh, Yu-Jie Huang, Jui-Cheng Huang
  • Patent number: 10746693
    Abstract: A device includes a biosensor, a sensing circuit electrically connected to the biosensor, a quantizer electrically connected to the sensing circuit, a digital filter electrically connected to the quantizer, a selective window electrically connected to the digital filter, and a decision unit electrically connected to the selective window.
    Type: Grant
    Filed: July 10, 2017
    Date of Patent: August 18, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Jui-Cheng Huang, Yi-Shao Liu, Chun-Wen Cheng, Tung-Tsun Chen, Chin-Hua Wen
  • Patent number: 10739295
    Abstract: An apparatus including an integrated reference electrode and a fluid dispenser is described. The reference electrode includes a body and a tip. The fluid dispenser at least partially surrounds the tip of the reference electrode and includes an inlet, a chamber, and an outlet. The fluid dispenser is configured to receive a fluid sample from the inlet to the chamber and form a droplet of the fluid sample through the outlet so that the droplet is in fluidic contact with the tip of the reference electrode and associated with a known potential determined by the reference electrode.
    Type: Grant
    Filed: October 5, 2017
    Date of Patent: August 11, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chin-Hua Wen, Jui-Cheng Huang
  • Patent number: 10712333
    Abstract: A semiconductor device includes a circuit layer and a nanopore layer. The nanopore layer is formed on the circuit layer and is formed with a pore therethrough. The circuit layer includes a circuit unit configured to drive a biomolecule through the pore and to detect a current associated with a resistance of the nanopore layer, whereby a characteristic of the biomolecule can be determined using the currents detected by the circuit unit.
    Type: Grant
    Filed: May 31, 2018
    Date of Patent: July 14, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Kun-Lung Chen, Tung-Tsun Chen, Cheng-Hsiang Hsieh, Yu-Jie Huang, Jui-Cheng Huang
  • Patent number: 10702869
    Abstract: A fluidic testing platform and methods of its operation are described. The fluidic cartridge includes a first fluidic channel and a wheel assembly coupled to the first fluidic channel. The wheel assembly includes a center portion coupled to the first fluidic channel and designed to deliver fluid through one or more second fluidic channels that radiate outward from the center portion. The wheel assembly also includes a third fluidic channel arranged in a closed loop and one or more capillaries coupled to an outer surface of the third fluidic channel and arranged to radiate outward from the center portion. The wheel assembly is designed to rotate such that fluid is forced outward from the center portion through the one or more capillaries.
    Type: Grant
    Filed: September 15, 2017
    Date of Patent: July 7, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chin-Hua Wen, Jui-Cheng Huang
  • Publication number: 20200173958
    Abstract: Various embodiments of the present application are directed towards an ion-sensitive field-effect transistor for enhanced sensitivity. In some embodiments, a substrate comprises a pair of first source/drain regions and a pair of second source/drain regions. Further, a first gate electrode and a second gate electrode underlie the substrate. The first gate electrode is laterally between the first source/drain regions, and the second gate electrode is laterally between the second source/drain regions. An interconnect structure underlies the substrate and defines conductive paths electrically shorting the second source/drain regions and the second gate electrode together. A passivation layer is over the substrate and defines a first well and a second well. The first and second wells respectively overlie the first and second gate electrodes, and a sensing layer lines the substrate in the first and second wells. In some embodiments, sensing probes are in the first well, but not the second well.
    Type: Application
    Filed: May 16, 2019
    Publication date: June 4, 2020
    Inventors: Katherine H. Chiang, Jui-Cheng Huang, Ke-Wei Su, Tung-Tsun Chen, Wei Lee, Pei-Wen Liu