Abstract: A method includes following steps. A beating pulse of a cardiac cell is monitored by using a biologically sensitive field-effect transistor (BioFET) disposed within a semiconductor substrate. A temperature around the cardiac cell is detected by using a temperature-sensing diode disposed within the semiconductor substrate. In response to the detected temperature falling below a predetermined threshold, the cardiac cell is heated by using a heater disposed within the semiconductor substrate. The cardiac cell is placed within a fluid containment region above the BioFET, and the temperature-sensing diode occupies a larger area within the fluid containment region than the heater.

Abstract: Devices, methods for fabricating said devices, and methods for detecting an analyte within a bio-target are described herein. The device includes a top assembly and a bottom assembly. The Top assembly includes an electrode disposed on a top layer. The bottom assembly includes a bio-chip disposed on a bottom layer and a polymer body disposed between the bio-chip and the top assembly. The polymer body includes a channel. The electrode of the top assembly is positioned within the channel. The channel is configured to accommodate the bio-target containing the analyte.

Abstract: A semiconductor biosensor includes a semiconductor layer having a first surface and a second surface opposite to the first surface, a FET device in the semiconductor layer, an isolation layer over the first surface of the semiconductor layer, a pair of first electrodes over the isolation layer, and a pair of second electrodes over the isolation layer. The FET device includes a gate structure disposed over the second surface of the semiconductor layer. The isolation layer includes a rectangular opening substantially aligned with the FET device. The pair of second electrodes is separated from the pair of first electrodes.

Abstract: A bio-field effect transistor (bioFET) system includes a bioFET configured to receive to a first voltage signal and output a current signal, where the current signal varies exponentially with respect to the first voltage signal. A logarithmic current-to-time converter is connected to the bioFET and is configured to receive the current signal and convert the current signal to a time domain signal. The time domain signal varies logarithmically with respect to the current signal, such that the time domain signal varies linearly with respect to the first voltage signal.

Abstract: A semiconductor package includes an array of through-substrate-via (TSV) structures comprising a number (O) of TSV structures, wherein the array comprises a number (M) of active TSV structures; a number (N) of contact structures, the contact structures comprising a plurality of pairs configured to receive an input test signal and provide an output test signal, respectively; and a plurality of binary-tree branches, each of the plurality of binary-tree branches electrically coupling a first one of the active TSV structures to a second one of the active TSV structures and a third one of the active TSV structures.

Abstract: An IC structure includes a biologically sensitive field-effect transistor (BioBET) in a semiconductor substrate, and a dielectric layer over a backside surface of the semiconductor substrate. The dielectric layer has a sensing well extending through the dielectric layer to a channel region of the BioFET. The IC structure further includes a biosensing film, a plurality of fluid channel walls, and a first heater. The biosensing film lines the sensing well in the dielectric layer. The fluid channel walls are over the biosensing film and define a fluid containment region over the sensing well of the dielectric layer. The first heater is in the semiconductor substrate. The first heater has at least a portion overlapping with the fluid containment region.

Abstract: A biosensor system package includes: a transistor structure in a semiconductor layer having a front side and a back side, the transistor structure comprising a channel region; a buried oxide (BOX) layer on the back side of the semiconductor layer, wherein the buried oxide layer has an opening on the back side of the channel region, and an interface layer covers the back side over the channel region; a multi-layer interconnect (MLI) structure on the front side of the semiconductor layer, the transistor structure being electrically connected to the MLI structure; and a cap structure attached to the buried oxide layer, the cap structure comprising a microneedle.

Abstract: A biosensor includes a semiconductor layer having a first surface and a second surface opposite to the first surface, a FET device in the semiconductor layer, an isolation layer over the first surface of the semiconductor layer, a dielectric layer over the isolation layer and the first surface of the semiconductor layer, and a pair of first electrodes and a pair of second electrodes over the dielectric layer and separated from each other. The isolation layer has a rectangular opening substantially aligned with the FET device. The rectangular opening has pair of first sides and a pair of second sides. An extending direction of the pair of first sides is perpendicular to an extending direction of the pair of second sides. The pair of first electrodes is disposed over the pair of first sides, and the pair of second electrodes is disposed over the pair of second sides.

Abstract: A biosensor system package includes: a transistor structure in a semiconductor layer having a front side and a back side, the transistor structure comprising a channel region; a multi-layer interconnect (MLI) structure on the front side of the semiconductor layer, the transistor structure being electrically connected to the MLI structure; a carrier substrate on the MLI structure; a first through substrate via (TSV) structure extending though the carrier substrate and configured to provide an electrical connection between the MLI structure and a separate die; a buried oxide (BOX) layer on the back side of the semiconductor layer, wherein the buried oxide layer has an opening on the back side of the channel region, and an interface layer covers the back side over the channel region; and a microfluidic channel cap structure attached to the buried oxide layer.

Abstract: A bio-field effect transistor (bioFET) system includes a bioFET configured to receive to a first voltage signal and output a current signal, where the current signal varies exponentially with respect to the first voltage signal. A logarithmic current-to-time converter is connected to the bioFET and is configured to receive the current signal and convert the current signal to a time domain signal. The time domain signal varies logarithmically with respect to the current signal, such that the time domain signal varies linearly with respect to the first voltage signal.

Abstract: An apparatus including an integrated reference electrode and a fluid dispenser is described. The reference electrode includes a body and a tip. The fluid dispenser at least partially surrounds the tip of the reference electrode and includes an inlet, a chamber, and an outlet. The fluid dispenser is configured to receive a fluid sample from the inlet to the chamber and form a droplet of the fluid sample through the outlet so that the droplet is in fluidic contact with the tip of the reference electrode and associated with a known potential determined by the reference electrode.

Abstract: Various embodiments of the present application are directed towards an ion-sensitive field-effect transistor for enhanced sensitivity. In some embodiments, a substrate comprises a pair of first source/drain regions and a pair of second source/drain regions. Further, a first gate electrode and a second gate electrode underlie the substrate. The first gate electrode is laterally between the first source/drain regions, and the second gate electrode is laterally between the second source/drain regions. An interconnect structure underlies the substrate and defines conductive paths electrically shorting the second source/drain regions and the second gate electrode together. A passivation layer is over the substrate and defines a first well and a second well. The first and second wells respectively overlie the first and second gate electrodes, and a sensing layer lines the substrate in the first and second wells. In some embodiments, sensing probes are in the first well, but not the second well.

Abstract: A biosensor system package includes: a transistor structure in a semiconductor layer having a front side and a back side, the transistor structure comprising a channel region; a multi-layer interconnect (MLI) structure on the front side of the semiconductor layer, the transistor structure being electrically connected to the MLI structure; a carrier substrate on the MLI structure; a first through substrate via (TSV) structure extending though the carrier substrate and configured to provide an electrical connection between the MLI structure and a separate die; a buried oxide (BOX) layer on the back side of the semiconductor layer, wherein the buried oxide layer has an opening on the back side of the channel region, and an interface layer covers the back side over the channel region; and a microfluidic channel cap structure attached to the buried oxide layer.

Abstract: A biosensor system package includes: a transistor structure in a semiconductor layer having a front side and a back side, the transistor structure comprising a channel region; a buried oxide (BOX) layer on the back side of the semiconductor layer, wherein the buried oxide layer has an opening on the back side of the channel region, and an interface layer covers the back side over the channel region; a multi-layer interconnect (MLI) structure on the front side of the semiconductor layer, the transistor structure being electrically connected to the MLI structure; and a cap structure attached to the buried oxide layer, the cap structure comprising a microneedle.

Abstract: Cell monitoring apparatus includes sensing chip and channel module. Sensing chip includes channel region, source and drain regions, and sensing film. The channel region includes first semiconductor material. The source and drain regions are disposed at opposite sides of the channel region, and include a second semiconductor material. Sensing film is disposed on the channel region at a sensing surface of the sensing chip. Channel module is disposed on the sensing surface of sensing chip. A microfluidic channel is formed between the sensing surface of the sensing chip and a proximal surface of the channel module. The microfluidic channel includes a culture chamber and a micro-well. The culture chamber is concave into the proximal surface of the channel module, and overlies the channel region. The micro-well is concave into a side of the culture chamber, and directly faces the sensing film.

Abstract: A semiconductor device includes: a first arrangement including first and second silicide layers correspondingly electrically coupled to opposing first and second sides of a doped first portion of an active region; and a second arrangement including a third silicide layer electrically coupled to a first or second side of a doped second portion of the active region.

Abstract: In an embodiment, a circuit includes: an error amplifier; a temperature sensor, wherein the temperature sensor is coupled to the error amplifier; a discrete time controller coupled to the error amplifier, wherein the discrete time controller comprises digital circuitry; a multiple bits quantizer coupled to the discrete time controller, wherein the multiple bits quantizer produces a digital code output; and a heating array coupled to the multiple bits quantizer, wherein the heating array is configured to generate heat based on the digital code output.

Abstract: A method of operating an integrated circuit includes using a first switching device to couple a bio-sensing device to a first signal path, generating, using the bio-sensing device, a bio-sensing signal on the first signal path in response to an electrical characteristic of a sensing film, using a second switching device to couple a temperature-sensing device to a second signal path, and generating, using the temperature-sensing device, a temperature-sensing signal on the second signal path in response to a temperature of the sensing film. The first and second switching devices, the bio-sensing device, the temperature-sensing device, and the sensing film are components of a sensing pixel of a plurality of sensing pixels of the integrated circuit.

Abstract: Cell monitoring apparatus includes sensing chip and channel module. Sensing chip includes channel region, source and drain regions, and sensing film. The channel region includes first semiconductor material. The source and drain regions are disposed at opposite sides of the channel region, and include a second semiconductor material. Sensing film is disposed on the channel region at a sensing surface of the sensing chip. Channel module is disposed on the sensing surface of sensing chip. A microfluidic channel is formed between the sensing surface of the sensing chip and a proximal surface of the channel module. The microfluidic channel includes a culture chamber and a micro-well. The culture chamber is concave into the proximal surface of the channel module, and overlies the channel region. The micro-well is concave into a side of the culture chamber, and directly faces the sensing film.

Abstract: A bio-field effect transistor (bioFET) system includes a bioFET configured to receive to a first voltage signal and output a current signal, where the current signal varies exponentially with respect to the first voltage signal. A logarithmic current-to-time converter is connected to the bioFET and is configured to receive the current signal and convert the current signal to a time domain signal. The time domain signal varies logarithmically with respect to the current signal, such that the time domain signal varies linearly with respect to the first voltage signal.