Patents by Inventor Jui-Chuan Chang
Jui-Chuan Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11942145Abstract: The present disclosure describes a method for memory cell placement. The method can include placing a memory cell region in a layout area and placing a well pick-up region and a first power supply routing region along a first side of the memory cell region. The method also includes placing a second power supply routing region and a bitline jumper routing region along a second side of the memory cell region, where the second side is on an opposite side to that of the first side. The method further includes placing a device region along the second side of the memory cell region, where the bitline jumper routing region is between the second power supply routing region and the device region.Type: GrantFiled: May 6, 2022Date of Patent: March 26, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Chuan Yang, Jui-Wen Chang, Feng-Ming Chang, Kian-Long Lim, Kuo-Hsiu Hsu, Lien Jung Hung, Ping-Wei Wang
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Patent number: 11664235Abstract: Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.Type: GrantFiled: October 30, 2017Date of Patent: May 30, 2023Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Shang-Yuan Yu, Hsiao Chien-Wen, Jui-Chuan Chang, Shao-Fu Hsu, Shao-Yen Ku, Wen-Chang Tsai, Yuan-Chih Chiang
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Patent number: 11090696Abstract: A method includes introducing ozone toward a photoresist layer over a substrate. The ozone is decomposed into dioxygen and first atomic oxygen. The dioxygen is decomposed into second atomic oxygen. The first atomic oxygen and the second atomic oxygen are reacted with the photoresist layer. An apparatus that performs the method is also disclosed.Type: GrantFiled: November 25, 2019Date of Patent: August 17, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jui-Chuan Chang, Shao-Yen Ku, Wen-Chang Tsai, Shang-Yuan Yu, Chien-Wen Hsiao, Fan-Yi Hsu
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Publication number: 20200094298Abstract: A method includes introducing ozone toward a photoresist layer over a substrate. The ozone is decomposed into dioxygen and first atomic oxygen. The dioxygen is decomposed into second atomic oxygen. The first atomic oxygen and the second atomic oxygen are reacted with the photoresist layer. An apparatus that performs the method is also disclosed.Type: ApplicationFiled: November 25, 2019Publication date: March 26, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jui-Chuan CHANG, Shao-Yen KU, Wen-Chang TSAI, Shang-Yuan YU, Chien-Wen HSIAO, Fan-Yi HSU
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Patent number: 10486204Abstract: A semiconductor apparatus for removing a photoresist layer on a substrate includes a platform, a first ultraviolet lamp, and an ozone supplier. The platform is used to support the substrate. The first ultraviolet lamp is used to provide first ultraviolet light. The ozone supplier has at least one first nozzle for introducing ozone toward the substrate through the first ultraviolet light, such that at least a part of the ozone is decomposed by the first ultraviolet light, and at least a part of the decomposed ozone reaches the photoresist layer to react with the photoresist layer. Moreover, a method of removing a photoresist layer on a substrate is also provided.Type: GrantFiled: November 6, 2014Date of Patent: November 26, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jui-Chuan Chang, Shao-Yen Ku, Wen-Chang Tsai, Shang-Yuan Yu, Chien-Wen Hsiao, Fan-Yi Hsu
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Publication number: 20180047580Abstract: Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.Type: ApplicationFiled: October 30, 2017Publication date: February 15, 2018Inventors: Shang-Yuan YU, Hsiao CHIEN-WEN, Jui-Chuan CHANG, Shao-Fu HSU, Shao-Yen KU, Wen-Chang TSAI, Yuan-Chih CHIANG
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Patent number: 9805946Abstract: Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.Type: GrantFiled: August 30, 2013Date of Patent: October 31, 2017Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Shang-Yuan Yu, Shao-Yen Ku, Hsiao Chien-Wen, Shao-Fu Hsu, Yuan-Chih Chiang, Wen-Chang Tsai, Jui-Chuan Chang
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Patent number: 9583352Abstract: A method of operating a wafer processing system includes etching a batch of wafers. The method also includes transferring at least a portion of the batch of wafers to a first front opening universal pod (FOUP). The method further includes purging an interior of the first FOUP with an inert gas. The method additionally includes transporting the first FOUP from a first loading port to a second loading port. The method also includes monitoring an elapsed time from the purging. The method further includes performing a second purging of the interior of the first FOUP if the elapsed time exceeds a threshold time. The method additionally includes cleaning the batch of wafers.Type: GrantFiled: August 18, 2015Date of Patent: February 28, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wen-Chang Tsai, Shao-Yen Ku, Hsieh-Ching Wei, Yuan Chih Chiang, Jui-Chuan Chang, Yung-Li Tsai
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Patent number: 9349617Abstract: Embodiments that relate to mechanisms for cleaning wafers is provided. A method for wafer cleaning includes cleaning wafers by a wet-bench cleaning operation. The method also includes thereafter cleaning each of the wafers by a single-wafer cleaning operation. In addition, a cleaning apparatus for enhancing the performance of the above method is also provided.Type: GrantFiled: November 22, 2013Date of Patent: May 24, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shang-Yuan Yu, Shao-Yen Ku, Chien-Wen Hsiao, Hong-Jie Xu, Jui-Chuan Chang, Wen-Chang Tsai
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Publication number: 20160129484Abstract: A semiconductor apparatus for removing a photoresist layer on a substrate includes a platform, a first ultraviolet lamp, and an ozone supplier. The platform is used to support the substrate. The first ultraviolet lamp is used to provide first ultraviolet light. The ozone supplier has at least one first nozzle for introducing ozone toward the substrate through the first ultraviolet light, such that at least a part of the ozone is decomposed by the first ultraviolet light, and at least a part of the decomposed ozone reaches the photoresist layer to react with the photoresist layer. Moreover, a method of removing a photoresist layer on a substrate is also provided.Type: ApplicationFiled: November 6, 2014Publication date: May 12, 2016Inventors: Jui-Chuan CHANG, Shao-Yen KU, Wen-Chang TSAI, Shang-Yuan YU, Chien-Wen HSIAO, Fan-Yi HSU
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Publication number: 20150357198Abstract: A method of operating a wafer processing system includes etching a batch of wafers. The method also includes transferring at least a portion of the batch of wafers to a first front opening universal pod (FOUP). The method further includes purging an interior of the first FOUP with an inert gas. The method additionally includes transporting the first FOUP from a first loading port to a second loading port. The method also includes monitoring an elapsed time from the purging. The method further includes performing a second purging of the interior of the first FOUP if the elapsed time exceeds a threshold time. The method additionally includes cleaning the batch of wafers.Type: ApplicationFiled: August 18, 2015Publication date: December 10, 2015Inventors: Wen-Chang TSAI, Shao-Yen KU, Hsieh-Ching WEI, Yuan Chih CHIANG, Jui-Chuan CHANG, Yung-Li TSAI
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Patent number: 9136149Abstract: A loading port includes a housing and a plurality of stations defined in the housing configured to receive a front opening universal pod (FOUP). The loading port further includes a connector configured to receive an inert gas. At least one of the plurality of stations is configured to deliver the inert gas to the FOUP to purge an interior of the FOUP of moisture. A system including the loading port and a method of using the system are also described.Type: GrantFiled: November 16, 2012Date of Patent: September 15, 2015Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wen-Chang Tsai, Shao-Yen Ku, Hsieh-Ching Wei, Yuan Chih Chiang, Jui-Chuan Chang, Yung-Li Tsai
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Publication number: 20150144159Abstract: Embodiments that relate to mechanisms for cleaning wafers is provided. A method for wafer cleaning includes cleaning wafers by a wet-bench cleaning operation. The method also includes thereafter cleaning each of the wafers by a single-wafer cleaning operation. In addition, a cleaning apparatus for enhancing the performance of the above method is also provided.Type: ApplicationFiled: November 22, 2013Publication date: May 28, 2015Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shang-Yuan YU, Shao-Yen KU, Chien-Wen HSIAO, Hong-Jie XU, Jui-Chuan CHANG, Wen-Chang TSAI
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Publication number: 20150064928Abstract: Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.Type: ApplicationFiled: August 30, 2013Publication date: March 5, 2015Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: Shang-Yuan Yu, Shao-Yen Ku, Hsiao Chien-Wen, Shao-Fu Hsu, Yuan-Chih Chiang, Wen-Chang Tsai, Jui-Chuan Chang
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Publication number: 20140141541Abstract: A loading port includes a housing and a plurality of stations defined in the housing configured to receive a front opening universal pod (FOUP). The loading port further includes a connector configured to receive an inert gas. At least one of the plurality of stations is configured to deliver the inert gas to the FOUP to purge an interior of the FOUP of moisture. A system including the loading port and a method of using the system are also described.Type: ApplicationFiled: November 16, 2012Publication date: May 22, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wen-Chang TSAI, Shao-Yen KU, Hsieh-Ching WEI, Yuan Chih CHIANG, Jui-Chuan CHANG, Yung-Li TSAI
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Patent number: 6954238Abstract: A flat panel display or a backlight module for homogenizing temperature distribution. The backlight module utilizes a heat pipe to carry out the heat from the light source quickly and homogenizes the distribution of temperature of the light source.Type: GrantFiled: February 21, 2002Date of Patent: October 11, 2005Assignee: AU Optronics Corp.Inventors: Chen-Hua Liu, Jui-Chuan Chang, Kuo-Chung Lee, Kai-Yu Sun
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Publication number: 20020141202Abstract: A light guide plate with embedded diffuser sheet is disclosed. The light guide plate for a flat panel display device, includes: a bottom substrate having a cross-section of trapezoid for transferring and reflecting said light; and a diffuser sheet locating on the substrate to distribute the light; wherein said diffuser sheet is integrated with said substrate. The light guide can reduce the thickness and the weight of a backlight module used for a flat panel display device.Type: ApplicationFiled: March 28, 2002Publication date: October 3, 2002Applicant: AU Optronics Corp.Inventors: Chen-Hua Liu, Jui-Chuan Chang, Guang-Tau Sung
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Publication number: 20020113919Abstract: A flat panel display or a backlight module for homogenizing the temperature distribution is disclosed. The backlight module utilizes a heat pipe to carry out the heat from the light source quickly and homogenize the distribution of temperature of the light source. A flat panel display includes such kind of backlight module is also discloed here.Type: ApplicationFiled: February 21, 2002Publication date: August 22, 2002Applicant: AU Optronics Corp.Inventors: Chen-Hua Liu, Jui-Chuan Chang, Kuo-Chung Lee, Kai-Yu Sun