Abstract: A method for use in the manufacture of a microelectronic apparatus, the method comprising exposing a dummy field on a substrate by utilizing a lithographic scanner at a first speed, and exposing a production field on the substrate by utilizing the lithographic scanner at a second speed, where the first speed is substantially greater than the second speed. In a related embodiment, a method for use in the manufacture a microelectronic apparatus comprises exposing a non-critical layer of the apparatus by utilizing a lithographic scanner at a first speed, and exposing a critical layer of the apparatus by utilizing the lithographic scanner at a second speed, where the first speed is substantially greater than the second speed.

Abstract: System and method for improving immersion scanner overlay performance are described. One embodiment is a method of improving overlay performance of an photolithography immersion scanner including a wafer table having lens cooling water (“LCW”) disposed in a water channel therein, the wafer table having an input for receiving the LCW into the water channel and an output for expelling the LCW from the water channel. The method includes providing a water tank that connects to at least one of the wafer table input and the wafer table output; monitoring a pressure of water in the water tank; and maintaining the pressure of the water in the water tank at a predetermined level.

Abstract: Methods for determining a quality of a light source applied to a photolithographic process are provided. An image sensor array is exposed to a light from a light source. Addresses and respective intensities corresponding to a plurality of locations on a pupil map representing intensity of the light from on the image sensor array. At least one of an inner curve and an outer curve of the pupil map is defined based upon the collected addresses and respective intensities. The light source is applied to a photolithographic process if the addresses have a predetermined pattern relative to the at least one of the inner curve and the outer curve.

Abstract: System and method for improving immersion scanner overlay performance are described. One embodiment is a method of improving overlay performance of an photolithography immersion scanner including a wafer table having lens cooling water (“LCW”) disposed in a water channel therein, the wafer table having an input for receiving the LCW into the water channel and an output for expelling the LCW from the water channel. The method includes providing a water tank that connects to at least one of the wafer table input and the wafer table output; monitoring a pressure of water in the water tank; and maintaining the pressure of the water in the water tank at a predetermined level.

Abstract: The present disclosure provides a lithography apparatus with improved lithography throughput. The lithography apparatus includes a first lens system; a first substrate stage configured to receive a first radiation energy from the first lens system, and designed operable to move a substrate during an exposing process; a second lens system, having a higher resolution than that of the first lens system; and a second substrate stage approximate to the first substrate stage and configured to receive a second radiation energy from the second lens system, and designed operable to receive the substrate from the first substrate stage and move the substrate.

Abstract: Methods for determining a quality of a light source applied to a photolithographic process are provided. An image sensor array is exposed to a light from a light source. Addresses and respective intensities corresponding to a plurality of locations on a pupil map representing intensity of the light from on the image sensor array. At least one of an inner curve and an outer curve of the pupil map is defined based upon the collected addresses and respective intensities. The light source is applied to a photolithographic process if the addresses have a predetermined pattern relative to the at least one of the inner curve and the outer curve.

Abstract: A method for improving critical dimension of a substrate is provided. Manufacturing data of a plurality of critical dimension deviations corresponding to a plurality of areas on the substrate is collected. A plurality of sensitivity data corresponding to the plurality of areas is also collected. A plurality of exposure dosage offsets corresponding to the plurality of areas are calculated based on the plurality of critical dimension deviations and the plurality of sensitivity data.

Abstract: A method for use in the manufacture of a microelectronic apparatus, the method comprising exposing a dummy field on a substrate by utilizing a lithographic scanner at a first speed, and exposing a production field on the substrate by utilizing the lithographic scanner at a second speed, where the first speed is substantially greater than the second speed. In a related embodiment, a method for use in the manufacture a microelectronic apparatus comprises exposing a non-critical layer of the apparatus by utilizing a lithographic scanner at a first speed, and exposing a critical layer of the apparatus by utilizing the lithographic scanner at a second speed, where the first speed is substantially greater than the second speed.

Abstract: A method for improving critical dimension of a substrate is provided. Manufacturing data of a plurality of critical dimension deviations corresponding to a plurality of areas on the substrate is collected. A plurality of sensitivity data corresponding to the plurality of areas is also collected. A plurality of exposure dosage offsets corresponding to the plurality of areas are calculated based on the plurality of critical dimension deviations and the plurality of sensitivity data.

Abstract: System and method for improving immersion scanner overlay performance are described. One embodiment is a method of improving overlay performance of an photolithography immersion scanner comprising a wafer table having lens cooling water (“LCW”) disposed in a water channel therein, the wafer table having an input for receiving the LCW into the water channel and an output for expelling the LCW from the water channel. The method comprises providing a water tank at least one of the wafer table input and the wafer table output; monitoring a pressure of water in the water tank; and maintaining the pressure of the water in the water tank at a predetermined level.

Abstract: Methods for determining a quality of a light source applied to a photolithographic process are provided. An image sensor array is exposed to a light from a light source. Addresses and respective intensities corresponding to a plurality of locations on a pupil map representing intensity of the light from on the image sensor array. At least one of an inner curve and an outer curve of the pupil map is defined based upon the collected addresses and respective intensities. The light source is applied to a photolithographic process if the addresses have a predetermined pattern relative to the at least one of the inner curve and the outer curve.

Abstract: The present disclosure provides a lithography apparatus with improved lithography throughput. The lithography apparatus includes a first lens system; a first substrate stage configured to receive a first radiation energy from the first lens system, and designed operable to move a substrate during an exposing process; a second lens system, having a higher resolution than that of the first lens system; and a second substrate stage approximate to the first substrate stage and configured to receive a second radiation energy from the second lens system, and designed operable to receive the substrate from the first substrate stage and move the substrate.

Abstract: An anti-shock system for a machine. A first movable device is disposed between the machine and a surface. When vibration is transmitted to the machine from the surface, the first movable device releases the machine, which slides along the base to prevent vibration from transmitted to the machine.

Abstract: Methods for determining a quality of a light source applied to a photolithographic process are provided. An image sensor array is exposed to a light from a light source. Addresses and respective intensities corresponding to a plurality of locations on a pupil map representing intensity of the light from on the image sensor array. At least one of an inner curve and an outer curve of the pupil map is defined based upon the collected addresses and respective intensities. The light source is applied to a photolithographic process if the addresses have a predetermined pattern relative to the at least one of the inner curve and the outer curve.

Abstract: Methods for determining a quality of a light source applied to a photolithographic process are provided. An image sensor array is exposed to a light from a light source. Addresses and respective intensities corresponding to a plurality of locations on a pupil map representing intensity of the light from on the image sensor array. At least one of an inner curve and an outer curve of the pupil map is defined based upon the collected addresses and respective intensities. The light source is applied to a photolithographic process if the addresses have a predetermined pattern relative to the at least one of the inner curve and the outer curve.