Abstract: A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.

Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (Al) or formula (A2): Zr12O8(OH)14(RCO2)18??Formula (A1); or Hf6O4(OH)6(RCO2)10??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.

Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (A1) or formula (A2): Zr12O8(OH)14(RCO2)18 ??Formula (A1); or Hf6O4(OH)6(RCO2)10 ??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.

Abstract: A method for producing a layout of a device in an integrated circuit before actually fabricated is provided. The method includes inputting at least one fixed parameter for the device for fabrication. And then, a first part of a set of variable parameters of a layout of the device is input. The complete set of the variable parameters is generated. It is checked whether or not the layout with the parameters is satisfying a requirement, wherein an end step is reached if the layout is accepted by the requirement, and a new part of the set of variable parameters as the first part being looping in the foregoing steps if the layout is not accepted by the requirement.

Abstract: The invention provides an ion current measurement device for a tool having an ion source. The ion current measurement device comprises an ion collecting cup and a replaceable liner. The ion collecting cup is disposed in the tool and the ion collecting cup possesses a cup opening facing the ion source. The replaceable liner is disposed in the ion collecting cup and the replaceable liner entirely covers a continuous inner sidewall of the ion collecting cup.

Abstract: A method of performing an ion implantation is provided. A workpiece is installed in the ion implanter. A wafer is provided in a receiving space within an ion implanter. An ion beam is generated by an ion source of the ion implanter. The bombard of the ion beam is blocked and particles generated during or after conducting the step of generating the ion beam are collected by the workpiece.

Abstract: An inductor formed on a semiconductor substrate, comprising a coil formed with at least a single metal layer having a plurality of slots and an insulator layer filled in the plurality of slots, wherein the insulator layer is encompassed in the single metal layer and the insulator layer does not cover the top surface of the single metal layer.

Abstract: An inductor formed on a semiconductor substrate is provided in the present invention. The inductor comprises a metal layer and an insulator layer. The metal layer constitutes the coil of the inductor. The insulator layer comprises at least one insulator slot, and each insulator slot is encompassed in the metal layer.

Abstract: A method for producing a layout of a device in an integrated circuit before actually fabricated is provided. The method includes inputting at least one fixed parameter for the device for fabrication. And then, a first part of a set of variable parameters of a layout of the device is input. The complete set of the variable parameters is generated. It is checked whether or not the layout with the parameters is satisfying a requirement, wherein an end step is reached if the layout is accepted by the requirement, and a new part of the set of variable parameters as the first part being looping in the foregoing steps if the layout is not accepted by the requirement.

Abstract: The invention provides an ion current measurement device for a tool having an ion source. The ion current measurement device comprises an ion collecting cup and a replaceable liner. The ion collecting cup is disposed in the tool and the ion collecting cup possesses a cup opening facing the ion source. The replaceable liner is disposed in the ion collecting cup and the replaceable liner entirely covers a continuous inner sidewall of the ion collecting cup.

Abstract: An inductor structure comprising a substrate; a plurality of insulation layers on the substrate; a first spiral electric conductive coil positioned in the insulation layers to form an inductor having a first direction of magnetic field; a second spiral electric conductive coil positioned in the insulation layers to form an inductor having a second direction of magnetic field, in which, the two or more inductors are independently positioned in a same 3-D space and have a good integration.

Abstract: A method of performing an ion implantation is provided. A workpiece is installed in the ion implanter. A wafer is provided in a receiving space within an ion implanter. An ion beam is generated by an ion source of the ion implanter. The bombard of the ion beam is blocked and particles generated during or after conducting the step of generating the ion beam are collected by the workpiece.

Abstract: An ion beam blocking component suitable for blocking an ion beam generated by an ion source of an ion implanter is provided. The blocking component includes a front plate, a back plate, and a plurality of side plates. The front plate has at least one opening. The back plate is behind the front plate, and has a plurality of grooves formed on one surface thereof facing the front plate. The side plates are connected between the front plate and the back plate, and a receiving space is formed between these plates.

Abstract: An inductor structure comprising a substrate; a plurality of insulation layers on the substrate; a first spiral electric conductive coil positioned in the insulation layers to form an inductor having a first direction of magnetic field; a second spiral electric conductive coil positioned in the insulation layers to form an inductor having a second direction of magnetic field, in which, the two or more inductors are independently positioned in a same 3-D space and have a good integration.

Abstract: An inductor structure comprising a substrate; a plurality of insulation layers on the substrate; a first spiral electric conductive coil positioned in the insulation layers to form an inductor having a first direction of magnetic field; a second spiral electric conductive coil positioned in the insulation layers to form an inductor having a second direction of magnetic field, in which, the two or more inductors are independently positioned in a same 3-D space and have a good integration.

Abstract: An inductor formed on a semiconductor substrate is provided in the present invention. The inductor includes a metal layer and an insulator layer. The metal layer constitutes the coil of the inductor. The insulator layer includes at least one insulator slot, and each insulator slot is encompassed in the metal layer.

Abstract: An ion beam blocking component suitable for blocking an ion beam generated by an ion source of an ion implanter is provided. The blocking component includes a front plate, a back plate, and a plurality of side plates. The front plate has at least one opening. The back plate is behind the front plate, and has a plurality of grooves formed on one surface thereof facing the front plate. The side plates are connected between the front plate and the back plate, and a receiving space is formed between these plates.

Abstract: A method for producing an IC layout with radio frequency devices is provided. The method has following steps. Type information of at least one RF device is inputted, and at least one RF parameter corresponding to the RF device is inputted as well. A frequency response result is then generated based on the type information and the RF parameter. When the frequency response result meets the required specification, an IC layout process is performed based on the frequency response result. However, when the frequency response result doesn't meet the required specification, another RE parameter is inputted again to produce new frequency response result.

Abstract: An inductor formed on a semiconductor substrate is provided in the present invention. The inductor comprises a metal layer and an insulator layer. The metal layer constitutes the coil of the inductor. The insulator layer comprises at least one insulator slot, and each insulator slot is encompassed in the metal layer.

Abstract: An inductor structure comprising a substrate; a plurality of insulation layers on the substrate; a first spiral electric conductive coil positioned in the insulation layers to form an inductor having a first direction of magnetic field; a second spiral electric conductive coil positioned in the insulation layers to form an inductor having a second direction of magnetic field, in which, the two or more inductors are independently positioned in a same 3-D space and have a good integration.