Patents by Inventor Jui-Fang Liao

Jui-Fang Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PHOTORESIST AND FORMATION METHOD THEREOF
    Publication number: 20240111210
    Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (A1) or formula (A2): Zr12O8(OH)14(RCO2)18 ??Formula (A1); or Hf6O4(OH)6(RCO2)10 ??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.
    Type: Application
    Filed: May 9, 2023
    Publication date: April 4, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITY
    Inventors: Jui-Hsiung LIU, Pin-Chia LIAO, Ting-An LIN, Ting-An SHIH, Yu-Fang TSENG, Burn Jeng LIN, Tsai-Sheng GAU, Po-Hsiung CHEN, Po-Wen CHIU
  • PHOTORESIST AND FORMATION METHOD THEREOF
    Publication number: 20240112912
    Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (Al) or formula (A2): Zr12O8(OH)14(RCO2)18??Formula (A1); or Hf6O4(OH)6(RCO2)10??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.
    Type: Application
    Filed: July 28, 2023
    Publication date: April 4, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITY
    Inventors: Jui-Hsiung LIU, Yu-Fang TSENG, Pin-Chia LIAO, Burn Jeng LIN, Tsai-Sheng GAU, Po-Hsiung CHEN, Po-Wen CHIU
  • Plastic rivet puller
    Patent number: 6412375
    Abstract: A plastic rivet puller includes two handles pivoted together, a first jaw plate fixedly fastened to one handle, a second jaw plate adjustably fastened to the other handle in one of a series of angular positions and adapted to work with the first jaw plate to pull the stud element of a plastic rivet from the socket element of the plastic rivet, the first jaw plate having a rightwards extended front jaw tip terminating in a beveled front end edge, the second jaw plate having a leftwards extended front jaw tip terminating in a beveled front end edge and adapted to work with the front jaw tip of the first jaw plate and to force the stud element of the plastic rivet out of the socket element of the plastic rivet when turning the handles to close the first jaw plate and the second jaw plate, and a stop plate pivoted to the second jaw plate and adapted to stop the front jaw tip of the second jaw plate from touching the front jaw tip of the second jaw plate, preventing damage to the plastic rivet during the pulling o
    Type: Grant
    Filed: May 8, 2001
    Date of Patent: July 2, 2002
    Inventors: Yu-Yen Wu Wang, Jui-Fang Liao