Abstract: A method includes forming a first fin and a second fin protruding from a frontside of a substrate, forming a gate stack over the first and second fins, forming a dielectric feature dividing the gate stack into a first segment engaging the first fin and a second segment engaging the second fin, and growing a first epitaxial feature on the first fin and a second epitaxial feature on the second fin. The dielectric feature is disposed between the first and second epitaxial features. The method also includes performing an etching process on a backside of the substrate to form a backside trench, and forming a backside via in the backside trench. The backside trench exposes the dielectric feature and the first and second epitaxial features. The backside via straddles the dielectric feature and is in electrical connection with the first and second epitaxial features.

Abstract: A display device includes a first display unit emitting a green light having a first output spectrum corresponding to a highest gray level of the display device and a second display unit emitting a blue light having a second output spectrum corresponding to the highest gray level of the display device. The first output spectrum has a main wave with a first peak. The second output spectrum has a main wave with a second peak and a sub wave with a sub peak. The second peak corresponds to a main wavelength, the sub peak corresponds to a sub wavelength, and the main wavelength is less than the sub wavelength. An intensity of the second peak is greater than an intensity of the sub peak and an intensity of the first peak.

Abstract: An electronic device includes a light emitting diode and a light converting layer disposed on the light emitting diode. The electronic device emits a green output light under an operation of a highest brightness. The green output light has an output spectrum. An intensity integral of the output spectrum from 380 nm to 489 nm is defined as a first intensity integral. An intensity integral of the output spectrum from 490 nm to 780 nm is defined as a second intensity integral. A ratio of the first intensity integral over the second intensity integral is defined as a first ratio, and the first ratio is greater than 0% and less than or equal to 7.5%.

Abstract: An electronic package and a method for fabricating the same are provided. The method includes forming an antenna structure in contact with one side of a circuit structure of a packaging substrate, and disposing an electronic component on the other side of the circuit structure. As such, the antenna structure is integrated with the packaging substrate, thereby reducing the thickness of the electronic package and improving the efficiency of the antenna structure.

Abstract: An electronic package and a method for fabricating the same are provide. An antenna substrate is stacked on a carrier structure stacking assembly. Since no additional layout area is required to be added to the carrier structure stacking assembly, the length of an antenna can be designed as required, and the antenna can thus meet its operational requirement.

Abstract: An electronic package and a method for fabricating the same are provided. The method includes forming an antenna structure in contact with one side of a circuit structure of a packaging substrate, and disposing an electronic component on the other side of the circuit structure. As such, the antenna structure is integrated with the packaging substrate, thereby reducing the thickness of the electronic package and improving the efficiency of the antenna structure.