Patents by Inventor Jui-Hung YU

Jui-Hung YU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure having a via and methods of manufacturing the same
    Patent number: 11211331
    Abstract: A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes a substrate and a seed layer on the substrate. The substrate includes a base and a composite layer encapsulating the base. The semiconductor structure also includes an epitaxial layer on the seed layer. The semiconductor structure also includes a semiconductor device on the epitaxial layer, and an interlayer dielectric layer on the epitaxial layer. The interlayer dielectric layer covers the semiconductor device. The semiconductor structure further includes a via structure that penetrates at least the composite layer of the substrate and is in contact with the base.
    Type: Grant
    Filed: January 22, 2020
    Date of Patent: December 28, 2021
    Assignee: Vanguard International Semiconductor Corporation
    Inventors: Yung-Fong Lin, Li-Wen Chuang, Jui-Hung Yu, Cheng-Tao Chou, Chun-Hsu Chen, Yu-Chieh Chou
  • SEMICONDUCTOR STRUCTURE AND METHODS OF MANUFACTURING THE SAME
    Publication number: 20210225770
    Abstract: A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes a substrate and a seed layer on the substrate. The substrate includes a base and a composite layer encapsulating the base. The semiconductor structure also includes an epitaxial layer on the seed layer. The semiconductor structure also includes a semiconductor device on the epitaxial layer, and an interlayer dielectric layer on the epitaxial layer. The interlayer dielectric layer covers the semiconductor device. The semiconductor structure further includes a via structure that penetrates at least the composite layer of the substrate and is in contact with the base.
    Type: Application
    Filed: January 22, 2020
    Publication date: July 22, 2021
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Yung-Fong LIN, Li-Wen CHUANG, Jui-Hung YU, Cheng-Tao CHOU, Chun-Hsu CHEN, Yu-Chieh CHOU