Abstract: A method includes forming a first fin and a second fin protruding from a frontside of a substrate, forming a gate stack over the first and second fins, forming a dielectric feature dividing the gate stack into a first segment engaging the first fin and a second segment engaging the second fin, and growing a first epitaxial feature on the first fin and a second epitaxial feature on the second fin. The dielectric feature is disposed between the first and second epitaxial features. The method also includes performing an etching process on a backside of the substrate to form a backside trench, and forming a backside via in the backside trench. The backside trench exposes the dielectric feature and the first and second epitaxial features. The backside via straddles the dielectric feature and is in electrical connection with the first and second epitaxial features.

Abstract: An electrophoretic display device includes a plurality of hexagonal electrophoretic display units adjoined together, in which each of the hexagonal electrophoretic display units is constituted by three rhombic electrophoretic display panels or one hexagonal electrophoretic display panel, and the hexagonal electrophoretic display panel has three rhombic regions; and a control module configured to control gray scale of each of the rhombic electrophoretic display panels or each of the rhombic regions.

Abstract: An electrophoretic display device includes a plurality of hexagonal electrophoretic display units adjoined together, in which each of the hexagonal electrophoretic display units is constituted by three rhombic electrophoretic display panels or one hexagonal electrophoretic display panel, and the hexagonal electrophoretic display panel has three rhombic regions; and a control module configured to control gray scale of each of the rhombic electrophoretic display panels or each of the rhombic regions.