Abstract: An embodiment method includes: forming fins extending from a semiconductor substrate; depositing an inter-layer dielectric (ILD) layer on the fins; forming masking layers on the ILD layer; forming a cut mask on the masking layers, the cut mask including a first dielectric material, the cut mask having first openings exposing the masking layers, each of the first openings surrounded on all sides by the first dielectric material; forming a line mask on the cut mask and in the first openings, the line mask having slot openings, the slot openings exposing portions of the cut mask and portions of the masking layers, the slot openings being strips extending perpendicular to the fins; patterning the masking layers by etching the portions of the masking layers exposed by the first openings and the slot openings; and etching contact openings in the ILD layer using the patterned masking layers as an etching mask.

Abstract: A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.

Abstract: A high-strength zirconia-alumina composite ceramic substrate suitable for semiconductor devices has been invented. It is manufactured by a procedure starting with mixing powder formula of alumina, zirconia, and a self-made synthetic additive for ball milling in an organic solvent at room temperature. The resulting mixture is homogenously dispersed and is then subjected to the steps of slurry preparation, degassing, green embryo forming, punching, calculation, and sintering to yield the final composite ceramic substrate with an excellent mechanical property of three-point bending strength>600 MPa and superior thermoelectric properties of thermal conductivity>26 W/mK, insulation resistance>1014 ?·cm and surface leakage current (150° C.)<200 nA.

Abstract: A high-strength zirconia-alumina composite ceramic substrate suitable for semiconductor devices has been invented. It is manufactured by a procedure starting with mixing powder formula of alumina, zirconia, and a self-made synthetic additive for ball milling in an organic solvent at room temperature. The resulting mixture is homogenously dispersed and is then subjected to the steps of slurry preparation, degassing, green embryo forming, punching, calculation, and sintering to yield the final composite ceramic substrate with an excellent mechanical property of three-point bending strength>600 MPa and superior thermoelectric properties of thermal conductivity>26 W/mK, insulation resistance>1014 ?·cm and surface leakage current (150° C.)<200 nA.