Abstract: A metal-insulator-metal (MIM) capacitor and methods of forming the same are described. In some embodiments, the method includes forming an opening having a first depth in one or more dielectric layers, depositing a layer in the opening and on the one or more dielectric layers, performing an anisotropic etch process to remove portions of the layer formed on horizontal surfaces, extending the opening to a second depth in the one or more dielectric layers, removing the layer, extending the opening to a third depth in the one or more dielectric layers, and forming a MIM capacitor in the opening.

Abstract: A semiconductor structure includes a capacitor structure and a contact structure. The capacitor structure includes an electrode layer, a protective dielectric layer, and a capacitor dielectric layer. The protective dielectric layer covers a top surface of the electrode layer. The capacitor dielectric layer is on the protective oxide layer. The contact structure penetrates the protective oxide layer and electrically connects to the electrode layer.

Abstract: Various embodiments of the present disclosure are directed towards an amorphous bottom electrode structure (BES) for a metal-insulator-metal (MIM) capacitor. The MIM capacitor comprises a bottom electrode, an insulator layer overlying the bottom electrode, and a top electrode overlying the insulator layer. The bottom electrode comprises a crystalline BES and the amorphous BES, and the amorphous BES overlies the crystalline BES and forms a top surface of the bottom electrode. Because the amorphous BES is amorphous, instead of crystalline, a top surface of the amorphous BES may have a small roughness compared to that of the crystalline BES. Because the amorphous BES forms the top surface of the bottom electrode, the top surface of the bottom electrode may have a small roughness compared to what it would otherwise have if the crystalline BES formed the top surface. The small roughness may improve a lifespan of the MIM capacitor.

Abstract: A hinge includes connection members, a first fixing member, a second fixing member, a first axle, a second axle, and a third axle. Each connection member includes a first slide block, a second arc surface, a first arc surface, and a second slide block. A first circular hole penetrates through the first slide block. A first arc hole penetrates through the second slide block. The first fixing member includes a third arc surface and a third slide block with a second arc hole. The second fixing member includes a fourth slide block with a second circular hole and a fourth arc surface. The first axle passes through the second arc hole and the first circular hole. The second axle passes through the second circular hole and the first arc hole. The third axle passes through the first circular hole and the first arc hole.

Abstract: A hinge assembly for an electronic device includes a joint assembly including joint components hinged one by one. Each joint component includes a first plate, a second plate, and a link component disposed between the first and second plates. Each of the first and second plates has two first slots diametrically extending in a first direction. The first plate has a second slot disposed between the two first slots and diametrically extending in a second direction different from the first direction. The second plate has a third slot disposed between the two first slots and diametrically extending in a third direction mirror-symmetrical to the second direction with respect to the first direction. The link component has an engaging hole and a guide portion. The engaging hole is corresponding to one of the first slots of each of the first and second plates, and the guide portion is formed on a surface of the link component and movable within the second or third slot.

Abstract: A hinge assembly for an electronic device includes a joint assembly including joint components hinged one by one. Each joint component includes a first plate, a second plate, and a link component disposed between the first and second plates. Each of the first and second plates has two first slots diametrically extending in a first direction. The first plate has a second slot disposed between the two first slots and diametrically extending in a second direction different from the first direction. The second plate has a third slot disposed between the two first slots and diametrically extending in a third direction mirror-symmetrical to the second direction with respect to the first direction. The link component has an engaging hole and a guide portion. The engaging hole is corresponding to one of the first slots of each of the first and second plates, and the guide portion is formed on a surface of the link component and movable within the second or third slot.

Abstract: A foldable display device includes a first plate member, a second plate member, a hinge assembly, and a flexible display member. The first plate member includes a first display surface and a first side. The second plate member includes a second display surface and a second side. The first side and the second side are close to each other. A first hinge member and a second hinge member of the hinge assembly are respectively connected to the first plate member and the second plate member. The flexible display member includes a first portion, a second portion, and a middle portion. The first portion contacts the first display surface. The second portion contacts the second display surface. The middle portion is between the first side and the second side. The first and second hinge members rotate relatively to have the flexible display member spread to be flat.

Abstract: Disclosed is a wafer comprising a first layer of GaSb grown on a GaSb substrate by molecular beam epitaxy (MBE), an oxide layer deposited on the surface of the first layer, and a cap layer deposited on the surface of the oxide layer. The wafer was capped with an arsenic (As) layer after the growth of the first layer. The As layer was removed from the wafer before the oxide layer was deposited on the surface of the first layer. Also disclosed is a method of forming a wafer. The method comprises growing a first layer of GaSb on a GaSb substrate by MBE, capping the wafer with an As layer after the growth of the first layer, removing the As layer from the wafer, depositing an oxide layer on the surface of the first layer, and depositing a cap layer on the surface of the oxide layer.