Patents by Inventor Jui-Lin Huang

Jui-Lin Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11942513
    Abstract: The present disclosure provides a semiconductor structure, including a substrate having a front surface, a first semiconductor layer proximal to the front surface, a second semiconductor layer over the first semiconductor layer, a gate having a portion between the first semiconductor layer and the second semiconductor layer, a spacer between the first semiconductor layer and the second semiconductor layer, contacting the gate, and a source/drain (S/D) region, wherein the S/D region is in direct contact with a bottom surface of the second semiconductor layer, and the spacer has an upper surface interfacing with the second semiconductor layer, the upper surface including a first section proximal to the S/D region, a second section proximal to the gate, and a third section between the first section and the second section.
    Type: Grant
    Filed: January 10, 2022
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Guan-Lin Chen, Kuo-Cheng Chiang, Chih-Hao Wang, Shi Ning Ju, Jui-Chien Huang
  • Patent number: 11942478
    Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a first source/drain epitaxial feature, a second source/drain epitaxial feature disposed adjacent the first source/drain epitaxial feature, a first dielectric layer disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature, a first dielectric spacer disposed under the first dielectric layer, and a second dielectric layer disposed under the first dielectric layer and in contact with the first dielectric spacer. The second dielectric layer and the first dielectric spacer include different materials.
    Type: Grant
    Filed: May 6, 2021
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jui-Chien Huang, Kuo-Cheng Chiang, Chih-Hao Wang, Shi Ning Ju, Guan-Lin Chen
  • Patent number: 7357662
    Abstract: An electric terminal connector includes a shell, a bridge unit, and a cap. The shell has a compartment a first end, a second end and at least one biasing member. The bridge unit is received in the compartment of the shell, which has a base and at least one elastic reed. The base securely mounted in the compartment, and the at least one elastic reed fastened on the base and extending to an area adjacent to the at least one biasing member respectively. The cap forms a passageway, covers the first end of the shell, and presses the biasing member to protrude into the compartment of the shell to bias the elastic reed. Consequently, at least one transmission line passes through the passageway of the cap and is securely fastened between and electrically connects with the biased elastic reed and the base, with a coax connector combining with the shell at the second end and electrically connecting with the bridge unit.
    Type: Grant
    Filed: June 21, 2007
    Date of Patent: April 15, 2008
    Inventor: Jui-Lin Huang