Patents by Inventor Jui-Lung Hsu

Jui-Lung Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing self-aligned titanium salicide using two two-step rapid thermal annealing steps
    Patent number: 5953633
    Abstract: A method of manufacturing self-aligned titanium salicide is provided which includes the steps of forming a LOCOS isolation region on a silicon substrate, forming a titanium layer on the surface of the silicon substrate, performing a first two-step rapid thermal anneal on the silicon substrate in an ambient filled with hydrogen and nitrogen gases to convert the titanium layer into a titanium salicide layer, selectively etching the silicon substrate to remove the titanium layer that has not reacted with the silicon substrate, and performing a second two-step rapid thermal anneal on the silicon substrate in an ambient filled with hydrogen and nitrogen gases. Each of the two-step rapid thermal anneals include a first pre-heat step and a second anneal step.
    Type: Grant
    Filed: August 5, 1997
    Date of Patent: September 14, 1999
    Assignee: Utek Semiconductor Corp.
    Inventors: Chun-Cho Chen, Jui-Lung Hsu