Abstract: An image sensing device and an image sensing method are provided. The image sensing device includes a pixel array, first row-selecting lines, second row-selecting lines and a control circuit. Pixels in the pixel array are arranged to form a plurality of rows and a plurality of columns. A first set of the pixels of each row is electrically connected to the corresponding first row-selecting line, and a second set of the pixels of each row is electrically connected to the corresponding second row-selecting line. The control circuit performs an HFR readout process to obtain an image frame. The rows are divided into a selectable portion and an unselectable portion. In each of HFR readout periods, the first set of an unselected first row and the second set of an unselected second row are selected from the selectable portion of the rows.

Abstract: An image sensing device and an image sensing method are provided. The image sensing device includes a pixel array, first row-selecting lines, second row-selecting lines and a control circuit. Pixels in the pixel array are arranged to form a plurality of rows and a plurality of columns. A first set of the pixels of each row is electrically connected to the corresponding first row-selecting line, and a second set of the pixels of each row is electrically connected to the corresponding second row-selecting line. The control circuit performs an HFR readout process to obtain an image frame. The rows are divided into a selectable portion and an unselectable portion. In each of HFR readout periods, the first set of an unselected first row and the second set of an unselected second row are selected from the selectable portion of the rows.

Abstract: A time-of-flight sensor for capturing a three-dimensional (3D) image of an object, includes: a light source for emitting projection light pulses at the object according to a projection signal; an array of pixel circuits for sensing reflection light pulses and storing image charges according to the reflection light pulses; and a processing circuit for calculating a first sum of first portions of the image charges and a second sum of second portions of the image charges to generate a distance information signal of the 3D image of the object simultaneously, wherein in one accumulation period, the first portion of the image charges is generated during a first time period, and the second portion of the image charges is generated during a second time period, wherein the second time period is directly following the first time period in the accumulation period.

Abstract: There is provided a circuit to improve the sensing efficiency of pixels that uses the induction effect of a capacitor to duplicate a voltage deviation caused by additional electrons and uses a circuit to cancel out the voltage deviation during reading pixel data thereby improving the sensing efficiency.

Abstract: There is provided a circuit to improve the sensing efficiency of pixels that uses the induction effect of a capacitor to duplicate a voltage deviation caused by additional electrons and uses a circuit to cancel out the voltage deviation during reading pixel data thereby improving the sensing efficiency.

Abstract: There is provided a circuit to improve the sensing efficiency of pixels that uses the induction effect of a capacitor to duplicate a voltage deviation caused by additional electrons and uses a circuit to cancel out the voltage deviation during reading pixel data thereby improving the sensing efficiency.

Abstract: An image sensor device is provided to effectively improve the signal discrimination of sensed/sampled pixel values/signals in the image sensor device operating in a dark condition as well as effectively avoiding signal saturation when such image sensor device operates in a light/bright condition. Such image sensor device, when operating in dark/light conditions, can perform the exposure operation to get/sample accurate pixel image signal and pixel reset signal for only one time without estimating the pixel image signal and pixel reset signal by performing the exposure operation twice.

Abstract: A force sensor device includes a first structure component, an optical sensor, and a flexible structure component. The optical sensor is disposed on the first structure component. The flexible structure component has a convex portion, and the flexible structure component is assembled with the first structure component to form a chamber in which the optical sensor is disposed. The optical sensor senses light ray transmitted from the flexible structure component to at least one pixel unit to generate at least one differential image and then detects a user's control force applied for the flexible structure component according to the at least one differential image. Differential image is temporal differential image, generated from successive pixel values of a single pixel unit, or is spatial differential image, generated based on temporal differential images of at least two neighboring pixel units.

Abstract: An image sensor apparatus includes a pixel array having pixel units each including an image sensor cell and a processing circuit. The processing circuit includes a bias transistor, second floating diffusion node, first switch unit, signal transfer capacitor, reset transfer capacitor, second switch unit, and third switch unit. Bias transistor is coupled between first and second floating diffusion nodes and has control terminal coupled to bias voltage. First switch unit is coupled between first and second floating diffusion nodes. Second switch unit is coupled between second floating diffusion node and signal transfer capacitor. Third switch unit is coupled between second floating diffusion node and reset transfer capacitor. Signal transfer capacitor is selectively coupled to second floating diffusion node. Reset transfer capacitor is selectively coupled to second floating diffusion node.

Abstract: There is provided a circuit to improve the sensing efficiency of pixels that uses the induction effect of a capacitor to duplicate a voltage deviation caused by additional electrons and uses a circuit to cancel out the voltage deviation during reading pixel data thereby improving the sensing efficiency.

Abstract: An image sensor apparatus includes a pixel array having pixel units each including an image sensor cell and a processing circuit. The processing circuit includes a bias transistor, second floating diffusion node, first switch unit, signal transfer capacitor, reset transfer capacitor, second switch unit, and third switch unit. Bias transistor is coupled between first and second floating diffusion nodes and has control terminal coupled to bias voltage. First switch unit is coupled between first and second floating diffusion nodes. Second switch unit is coupled between second floating diffusion node and signal transfer capacitor. Third switch unit is coupled between second floating diffusion node and reset transfer capacitor. Signal transfer capacitor is selectively coupled to second floating diffusion node. Reset transfer capacitor is selectively coupled to second floating diffusion node.

Abstract: An image sensor apparatus includes a pixel array having pixel units each including an image sensor cell and a processing circuit. The processing circuit includes a bias transistor, second floating diffusion node, first switch unit, signal transfer capacitor, reset transfer capacitor, second switch unit, and third switch unit. Bias transistor is coupled between first and second floating diffusion nodes and has control terminal coupled to bias voltage. First switch unit is coupled between first and second floating diffusion nodes. Second switch unit is coupled between second floating diffusion node and signal transfer capacitor. Third switch unit is coupled between second floating diffusion node and reset transfer capacitor. Signal transfer capacitor is selectively coupled to second floating diffusion node. Reset transfer capacitor is selectively coupled to second floating diffusion node.

Abstract: An image sensor apparatus includes a pixel array having pixel units each including an image sensor cell and a processing circuit. The processing circuit includes a bias transistor, second floating diffusion node, first switch unit, signal transfer capacitor, reset transfer capacitor, second switch unit, and third switch unit. Bias transistor is coupled between first and second floating diffusion nodes and has control terminal coupled to bias voltage. First switch unit is coupled between first and second floating diffusion nodes. Second switch unit is coupled between second floating diffusion node and signal transfer capacitor. Third switch unit is coupled between second floating diffusion node and reset transfer capacitor. Signal transfer capacitor is selectively coupled to second floating diffusion node. Reset transfer capacitor is selectively coupled to second floating diffusion node.

Abstract: There is provided a circuit to improve the sensing efficiency of pixels that uses the induction effect of a capacitor to duplicate a voltage deviation caused by additional electrons and uses a circuit to cancel out the voltage deviation during reading pixel data thereby improving the sensing efficiency.

Abstract: There is provided a circuit to improve the sensing efficiency of pixels that uses the induction effect of a capacitor to duplicate a voltage deviation caused by additional electrons and uses a circuit to cancel out the voltage deviation during reading pixel data thereby improving the sensing efficiency.

Abstract: There is provided a circuit to improve the sensing efficiency of pixels that uses the induction effect of a capacitor to duplicate a voltage deviation caused by additional electrons and uses a circuit to cancel out the voltage deviation during reading pixel data thereby improving the sensing efficiency.

Abstract: An image sensor includes a pair of pixel sharing circuits, a second reset transistor, an amplifier transistor, a readout transistor and a control circuit. The pair of pixel sharing circuits connected to a floating diffusion node, each including a photon device, a first reset transistor, a capture transistor, a holding transistor, a capacitor and a sharing transistor. The control circuit is configured to control the first reset transistor, the first capture transistor, the first holding transistor and the sharing transistor of each of the pair of sharing pixel circuits to be turned on or off.

Abstract: A method of image sensor apparatus includes: providing pixel array having pixel units arranged in M rows and N columns; providing N parallel column readout circuits each being arranged for reading out pixel data of one corresponding column; disposing a horizontal shift register in row direction coupled to the N parallel column readout circuits, to receive a pulse signal and a clock signal, sequentially shift a phase of the pulse signal according to the clock signal, and scan a corresponding column according to the shifted phase of the pulse signal; and using a column select circuit having N latches to receive a power down digital control signal transmitted from a microcontroller wherein the power down digital control signal is used to disable at least one column readout circuit to enable and select a portion of the set of N parallel column readout circuits.

Abstract: A time-of-flight sensor for capturing a three-dimensional (3D) image of an object, includes: a light source for emitting projection light pulses at the object according to a projection signal; an array of pixel circuits for sensing reflection light pulses and storing image charges according to the reflection light pulses; and a processing circuit for calculating a first sum of first portions of the image charges and a second sum of second portions of the image charges to generate a distance information signal of the 3D image of the object simultaneously, wherein in one accumulation period, the first portion of the image charges is generated during a first time period, and the second portion of the image charges is generated during a second time period, wherein the second time period is directly following the first time period in the accumulation period.

Abstract: A column parallel ADC circuit includes: plural column ADCs and a digital processing circuit. The plural column ADCs generate respective plural digital counts. The plural column ADCs include a first column ADC and a second column ADC. The first column ADC generates a first digital count according to a first analog signal, and the second column ADC generates a second digital count according to a second analog signal. The first digital count is a difference between a first digital signal and a second digital signal. The first and the second digital signals correspond to the first and the second analog signals respectively. The digital processing circuit generates the plural digital signals, wherein the digital processing circuit generates the first digital signal according to the first digital count and the second digital signal.