Abstract: Methods for determining a signal quality index for bioinformation measurement are disclosed herein. The method can include detecting a light intensity when the transmitter module is in an off state. The method can include comparing the light intensity to a first threshold. The method can include decreasing the gain of the receiver module when the light intensity is greater than the first threshold. The method can include comparing the light intensity to a second threshold when the light intensity is less than the first threshold. The method can include decreasing the gain of the receiver module when the light intensity is greater than the second threshold. The method can include comparing the light intensity to a third threshold when the light intensity is less than the second threshold. The method can include increasing the gain of the receiver module when the light intensity is less than the third threshold.

Abstract: Apparatuses and methods for calculating heart rate are disclosed herein. The apparatus can include a processor configured to calculate heart rate information. The processor includes a heart rate calculator including a memory configured to store a PPG signal and a calculation element coupled to the memory and configured to calculate a heart rate value and generate at least one quality checking factor according to the PPG signal. The processor also includes a checking element configured to determine a validity indicator according to the at least one quality checking factor, a memory control element coupled to the memory and configured to access the memory to transmit the PPG signal, and a multiplexer configured to output the PPG signal accessed by the memory control element or the heart rate value calculated by the calculation element according to the validity indicator.

Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.