Abstract: A method includes forming a first fin and a second fin protruding from a frontside of a substrate, forming a gate stack over the first and second fins, forming a dielectric feature dividing the gate stack into a first segment engaging the first fin and a second segment engaging the second fin, and growing a first epitaxial feature on the first fin and a second epitaxial feature on the second fin. The dielectric feature is disposed between the first and second epitaxial features. The method also includes performing an etching process on a backside of the substrate to form a backside trench, and forming a backside via in the backside trench. The backside trench exposes the dielectric feature and the first and second epitaxial features. The backside via straddles the dielectric feature and is in electrical connection with the first and second epitaxial features.

Abstract: A mobile device attachment adapted for a mobile device and a container for food or liquid is provided. The mobile device attachment includes a magnetic connecting member and a connecting member. The magnetic connecting member is selectively magnetically connected to the mobile device and adapted to extend in an escaping direction. The connecting member is disposed between the container and the magnetic connecting member. The mobile device has an image capturing range. When the magnetic connecting member extends in the escaping direction, the container, the magnetic connecting member and the connecting member are located outside the image capturing range. Besides, a container including the mobile device attachment is also provided.

Abstract: The present invention relates to a chip tray positioning device, which mainly comprises a frame body, a tray conveying module, a pulling module, a pushing module and a controller. The tray conveying module is disposed on the frame body, electrically connected to the controller and controlled to convey a chip tray from the start area to the end area. The pulling module and the pushing module are disposed on the frame body, electrically connected to the controller and controlled to cause the chip tray to be abutted against the end wall and the lateral wall of the frame body, thereby realizing the positioning of the chip tray and eliminating an error formed in the transfer process of the chip tray. In addition, the controller also controls the pushing module to knock the chip tray at a specific frequency so that the chip tray is vibrated.

Abstract: A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.

Abstract: The present disclosure describes a method for memory cell placement. The method can include placing a memory cell region in a layout area and placing a well pick-up region and a first power supply routing region along a first side of the memory cell region. The method also includes placing a second power supply routing region and a bitline jumper routing region along a second side of the memory cell region, where the second side is on an opposite side to that of the first side. The method further includes placing a device region along the second side of the memory cell region, where the bitline jumper routing region is between the second power supply routing region and the device region.

Abstract: An operation method of a network device and a control chip of the network device are provided. The network device receives an input signal through a fiber medium. The operation method includes the following steps: setting a target speed of the network device to a first speed; transmitting and/or receiving a data at the first speed; and setting the target speed of the network device to a second speed which is different from the first speed when the amplitude or energy of the input signal is not greater than a threshold.

Abstract: A non-volatile memory device and an erasing operation method thereof are provided. The non-volatile memory device includes a main memory cell region and a control circuit electrically connected to the main memory cell region. The main memory cell region has a plurality of memory cells. The control circuit is configured to perform an erasing operation on the memory cells, wherein the control circuit is configured to: obtain a current threshold voltage of the memory cell to be erased; calculate a difference between the current threshold voltage and an original threshold voltage to obtain a voltage shift value, wherein the original threshold voltage represents the pre-delivery threshold voltage of the memory cells; adjust an erase verify voltage level according to the voltage shift value; and determine whether the erasing operation is completed according to the adjusted erase verify voltage level.

Abstract: A non-volatile memory device and an erasing operation method thereof are provided. The non-volatile memory device includes a main memory cell region and a control circuit electrically connected to the main memory cell region. The main memory cell region has a plurality of memory cells. The control circuit is configured to perform an erasing operation on the memory cells, wherein the control circuit is configured to: obtain a current threshold voltage of the memory cell to be erased; calculate a difference between the current threshold voltage and an original threshold voltage to obtain a voltage shift value, wherein the original threshold voltage represents the pre-delivery threshold voltage of the memory cells; adjust an erase verify voltage level according to the voltage shift value; and determine whether the erasing operation is completed according to the adjusted erase verify voltage level.