Abstract: Disclosed is a semiconductor device and semiconductor fabrication method. A semiconductor device includes: a gate structure over a semiconductor substrate, having a high-k dielectric layer, a p-type work function layer, an n-type work function layer, a dielectric anti-reaction layer, and a glue layer; and a continuous metal cap over the gate structure formed by metal material being deposited over the gate structure, a portion of the anti-reaction layer being selectively removed, and additional metal material being deposited over the gate structure. A semiconductor fabrication method includes: receiving a gate structure; flattening the top layer of the gate structure; precleaning and pretreating the surface of the gate structure; depositing metal material over the gate structure to form a discontinuous metal cap; selectively removing a portion of the anti-reaction layer; depositing additional metal material over the gate structure to create a continuous metal cap; and containing growth of the metal cap.

Abstract: An electronic device protecting casing with heating function includes: a casing; a battery box within the casing; an interior of the battery box being arranged with a battery, a back side of the battery box being formed with an opening for receiving the battery; an outer cover serving to seal the opening; an inner side of the outer cover being formed with a heat isolation sheet; a heating unit being installed within the casing for heating the tablet computer; the heating unit including an electric heating plate. When power of the battery is transferred to the electric heating plate, the electric heating plate generates heat power and then transfers the power to the tablet computer for heating it; and a control circuit is installed within the casing; the electric heating plate is connected to the battery through a control switch; and the control circuit is connected to the control switch.

Abstract: A device includes: a complementary transistor including: a first transistor having a first source/drain region and a second source/drain region; and a second transistor stacked on the first transistor, and having a third source/drain region and a fourth source/drain region, the third source/drain region overlapping the first source/drain region, the fourth source/drain region overlapping the second source/drain region. The device further includes: a first source/drain contact electrically coupled to the third source/drain region; a second source/drain contact electrically coupled to the second source/drain region; a gate isolation structure adjacent the first and second transistors; and an interconnect structure electrically coupled to the first source/drain contact and the second source/drain contact.

Abstract: A pressurization control method for blood pressure measurement is applied on a blood pressure measurement device, and includes connecting an airbag unit with a pump, a slow exhaust valve unit and a pressure sensor, wherein the slow exhaust valve unit has a nonlinear depressurization rate; controlling the pump to pressurize the airbag unit with a nonlinear inflation rate until pulses of a pressure signal outputted from the pressure sensor is interpreted to obtain a blood pressure measurement result, wherein the pump inflates the airbag unit with an inflation rate increasing nonlinearly upon a temporal sequence, and the slow exhaust valve unit depressurizes the airbag unit with a nonlinear depressurization rate upon the temporal sequence.