Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of light-emitting elements on a first substrate and forming a first pattern array on a second substrate, wherein the first pattern array includes an adhesive layer. The method also includes transferring the plurality of light-emitting elements from the first substrate to the second substrate and forming the first pattern array on a third substrate. The method includes transferring the plurality of light-emitting elements from the second substrate to the third substrate, and reducing an adhesion force of a portion of the adhesive layer. The method also includes forming a second pattern array on a fourth substrate, and transferring the plurality of light-emitting elements from the third substrate to the fourth substrate. The pitch between the plurality of light-emitting elements on the first substrate is different than the pitch of the first pattern array.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of diodes on a first substrate and forming a first pattern array on a second substrate. The method also includes transferring the plurality of diodes from the first substrate to the second substrate. The method further includes forming the first pattern array on a third substrate. In addition, the method includes transferring the plurality of diodes from the second substrate to the third substrate. The method also includes forming a second pattern array on a fourth substrate. The method further includes transferring the plurality of diodes from the third substrate to the fourth substrate. The pitch between the plurality of diodes on the first substrate is different from the pitch of the first pattern array.

Abstract: A light source module adapted to provide a superposition structured pattern includes a light emitting device adapted to provide a light beam, a light guiding element including a polarizing beam splitter to separate the light beam into a first light beam and a second light beam, a first diffractive element configured to convert the first light beam into a first structured light, and a second diffractive element configured to convert the second light beam into a second structured light. Polarization states of the first light beam and the second light beam are different. The first and second structured lights are projected into a projection region, and overlapped and imaged as a superposition structured pattern. The projection region has sub-projection regions arranged in a matrix and adjacent to each other, and the pattern distribution of the superposition structured pattern in each sub-projection region is different from each other.

Abstract: A light source module adapted to provide a superposition structured pattern includes a light emitting device adapted to provide a light beam, a light guiding element including a polarizing beam splitter to separate the light beam into a first light beam and a second light beam, a first diffractive element configured to convert the first light beam into a first structured light, and a second diffractive element configured to convert the second light beam into a second structured light. Polarization states of the first light beam and the second light beam are different. The first and second structured lights are projected into a projection region, and overlapped and imaged as a superposition structured pattern. The projection region has sub-projection regions arranged in a matrix and adjacent to each other, and the pattern distribution of the superposition structured pattern in each sub-projection region is different from each other.

Abstract: A light-emitting device is introduced herein. The light-emitting device comprises a first light-generating active layer and a second light-generating active layer stacked in a vertical direction on a substrate wherein the first light-generating active layer and the second light-generating active layer emit light having substantially the same wavelength, and wherein the substrate, the first light-generating active layer, and the second light-generating active layer are formed together in a chip.

Abstract: A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.

Abstract: An optical coupling module includes a silicon photonic substrate, and an optical waveguide module. The silicon photonic substrate has a first surface and a first grating on the first surface for diffracting the light which passes through the grating. The optical waveguide module is disposed on the silicon photonic substrate, wherein the optical waveguide module includes an optical waveguide having an end disposed in corresponding to the first grating of the silicon photonic substrate. Otherwise, the optical waveguide module has a reflective surface coupled to the end of the optical waveguide and adapted to reflect the light emerging from or incident into the grating to form an optical path between the silicon photonic substrate and the optical waveguide for transmitting the light.

Abstract: A light-emitting device is introduced herein. The light-emitting device comprises a first light-generating active layer and a second light-generating active layer stacked in a vertical direction on a substrate wherein the first light-generating active layer and the second light-generating active layer emit light having substantially the same wavelength, and wherein the substrate, the first light-generating active layer, and the second light-generating active layer are formed together in a chip.

Abstract: A light-emitting system is introduced herein. The light-emitting system includes an insulating substrate and a plurality of light-emitting units electrically-connected on the insulating substrate. Each of the plurality of light-emitting units includes a plurality of light-emitting diodes arranged as a bridge rectifier. A first part of the plurality of light-emitting diodes emits light during positive half cycles of an AC power signal. A second part of the plurality of light-emitting diodes emits light during negative half cycles of the AC power signal. The third part of the plurality of light-emitting diodes comprising at least one light-emitting diode emits light during both the positive half cycles and the negative half cycles of the AC power signal, wherein the plurality of light-emitting units including the plurality of light-emitting diodes arranged as a bridge rectifier is formed together in a light-emitting chip.

Abstract: A charge apparatus including a natural energy conversion module, an energy converter, an energy transmitter, an energy receiver, and an electricity storage device is provided. The natural energy conversion module receives the natural energy and converts the natural energy into a first electric energy. The energy converter is electrically connected to the natural energy conversion module and converts the first electric energy into a wireless energy. The energy transmitter is electrically connected to the energy converter and transmits the wireless energy. The energy receiver receives the wireless energy and converts the wireless energy into a second electric energy to charge an external apparatus. The energy transmitter monitors the current charge status of the external apparatus so as to adjust transmitting the wireless energy. The electricity storage device is electrically connected to the natural energy conversion module to store the first electric energy.

Abstract: A photography and projection apparatus including a light emitting and sensing module and a projection lens is provided. The light emitting and sensing module has a light emitting and sensing area, and includes a light emitting unit array and a light sensing unit array. The light emitting unit array includes a plurality of light emitting units arranged in an array. The light emitting units are distributed in the light emitting and sensing area. The light emitting unit array is adapted to provide an image beam. The light sensing unit array includes a plurality of light sensing units arranged in an array. The light sensing units are distributed in the light emitting and sensing area. The projection lens is disposed on a transmission path of the image beam. A light emitting and sensing module is also provided.

Abstract: A fabricating method of light emitting element. A substrate is provided. A plurality of first concaves and a plurality of second concaves are formed on the substrate, wherein a volume of each first concave is different from a volume of each second concave. A plurality of first light emitting diode chips and a plurality of second light emitting diode chips are provided, wherein a volume of each first light emitting diode chip is corresponding to the volume of each first concave, and a volume of each second light emitting diode chip is corresponding to the volume of each second concave. The first light emitting diode chips are moved onto the substrate such that the first light emitting diode chips go into the first concaves, and the second light emitting diode chips are moved onto the substrate such that the second light emitting diode chips go into the first concaves.

Abstract: A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.

Abstract: A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.

Abstract: A light-emitting system includes a first and second power input terminals; for receiving an AC power input to the light-emitting system; a first, second, third, and fourth light-emitting-diode groups each having at least one light-emitting diode; a first circuit path having at least one light-emitting diode from each of the first and second light-emitting-diode groups, with the light-emitting diodes coupled serially and emitting light during a positive power cycle; and a second circuit path having at least one light-emitting diode from each of the third and fourth light-emitting-diode groups, with the light-emitting diodes coupled serially and emitting light during a negative power cycle. The second light-emitting-diode group and the third light-emitting-diode group share at least one common light-emitting diode, The first and second power input terminals, the first, second, third, and fourth light-emitting-diode groups, and the first and second circuit paths may belong to a single chip light-emitting system.

Abstract: A light-emitting system comprises: a first power input terminal and a second power input terminal; an insulating substrate; a first light-emitting-diode string formed on the insulating substrate comprising at least three light-emitting diodes placed sequentially in a first direction to allow a current flow through the at least three light-emitting diodes of the first light-emitting-diode string generally in the first direction; a second light-emitting-diode string formed on the insulating substrate comprising at least three light-emitting diodes placed sequentially in a second direction to allow a current flow through the at least three light-emitting diodes of the second light-emitting-diode string generally in the second direction; a third light-emitting-diode string comprising at least three light-emitting diodes placed sequentially in a third direction to allow a current flow through the at least three light-emitting diodes of the third light-emitting-diode string generally in the third direction.

Abstract: A display panel including a substrate, a meshed shielding pattern, and a plurality of light-emitting devices is provided. The meshed shielding pattern is disposed on the substrate so as to define a plurality of pixel regions on the substrate. The light-emitting devices are disposed on the substrate. At least one light-emitting device of the light-emitting devices is disposed in each pixel region of the pixel regions, wherein an area of the pixel region is A1, an area of the light-emitting device is A2, and a ratio of A2 to A1 is below 50%.

Abstract: An optical coupling module includes a silicon photonic substrate, and an optical waveguide module. The silicon photonic substrate has a first surface and a first grating on the first surface for diffracting the light which passes through the grating. The optical waveguide module is disposed on the silicon photonic substrate, wherein the optical waveguide module includes an optical waveguide having an end disposed in corresponding to the first grating of the silicon photonic substrate. Otherwise, the optical waveguide module has a reflective surface coupled to the end of the optical waveguide and adapted to reflect the light emerging from or incident into the grating to form an optical path between the silicon photonic substrate and the optical waveguide for transmitting the light.

Abstract: A semiconductor laser structure is provided. The semiconductor laser comprises a central thermal shunt, a ring shaped silicon waveguide, a contiguous thermal shunt, an adhesive layer and a laser element. The central thermal shunt is located on a SOI substrate which has a buried oxide layer surrounding the central thermal shunt. The ring shaped silicon waveguide is located on the buried oxide layer and surrounds the central thermal shunt. The ring shaped silicon waveguide includes a P-N junction of a p-type material portion, an n-type material portion and a depletion region there between. The contiguous thermal shunt covers a portion of the buried oxide layer and surrounds the ring shaped silicon waveguide. The adhesive layer covers the ring shaped silicon waveguide and the buried oxide layer. The laser element covers the central thermal shunt, the adhesive layer and the contiguous thermal shunt.

Abstract: A charge apparatus including a natural energy conversion module, an energy converter, an energy transmitter, an energy receiver, and an electricity storage device is provided. The natural energy conversion module receives the natural energy and converts the natural energy into a first electric energy. The energy converter is electrically connected to the natural energy conversion module and converts the first electric energy into a wireless energy. The energy transmitter is electrically connected to the energy converter and transmits the wireless energy. The energy receiver receives the wireless energy and converts the wireless energy into a second electric energy to charge an external apparatus. The energy transmitter monitors the current charge status of the external apparatus so as to adjust transmitting the wireless energy. The electricity storage device is electrically connected to the natural energy conversion module to store the first electric energy.