Patents by Inventor Juin-Yang CHEN

Juin-Yang CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR STRUCTURE
    Publication number: 20230187505
    Abstract: A semiconductor structure includes a substrate, a buffer layer, a channel layer, a barrier layer, a doped compound semiconductor layer, and a composite blocking layer. The buffer layer is on the substrate. The channel layer is on the buffer layer. The barrier layer is on the channel layer. The doped compound semiconductor layer is on the barrier layer. The composite blocking layer is on the doped compound semiconductor layer, the composite blocking layer and the barrier layer include the same Group III element, and the atomic percent of the same Group III element in the composite blocking layer increases with the distance from the doped compound semiconductor layer.
    Type: Application
    Filed: December 9, 2021
    Publication date: June 15, 2023
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Chih-Yen CHEN, Franky Juanda LUMBANTORUAN, Tuan-Wei WANG, Juin-Yang CHEN
  • Light-emitting device and the manufacturing method thereof
    Patent number: 9508901
    Abstract: A light-emitting device comprises: a first semiconductor layer; a transparent conductive oxide layer including a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region; and a metal layer formed on the transparent conductive oxide layer, wherein the metal layer is pervious to a light emitted from the active layer and comprises a pattern.
    Type: Grant
    Filed: August 29, 2013
    Date of Patent: November 29, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Juin-Yang Chen, De-Shan Kuo, Chun-Hsiang Tu, Po-Shun Chiu, Chien-Kai Chung, Hui-Chun Yeh, Min-Yen Tsai, Tsun-Kai Ko, Chun-Teng Ko
  • LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF
    Publication number: 20150060909
    Abstract: A light-emitting device comprises: a first semiconductor layer; a transparent conductive oxide layer including a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region; and a metal layer formed on the transparent conductive oxide layer, wherein the metal layer is pervious to a light emitted from the active layer and comprises a pattern.
    Type: Application
    Filed: August 29, 2013
    Publication date: March 5, 2015
    Applicant: Epistar Corporation
    Inventors: Juin-Yang CHEN, De-Shan KUO, Chun-Hsiang TU, Po-Shun CHIU, Chien-Kai CHUNG, Hui-Chun YEH, Min-Yen TSAI, Tsun-Kai KO, Chun-Teng KO