Abstract: A method of performing spectroscopic measurements provides an optical frequency comb, and directs the comb through or at a sample. The optical frequency comb is generated by gain switching a laser diode constructed from Gallium Nitride and related materials. Various techniques are described for manipulating the comb source to achieve desired benefits for spectroscopy.

Abstract: A device for measuring optical spectra at high speed and with high resolution using tunable optical laser comb sources. In one embodiment there is provided a first tunable comb laser source and a second tunable comb laser source whereby the wavelength of each comb laser source is chosen such that the combination of the two sources provides a continuous spectral coverage over a band in an optical spectrum under a selected wavelength tuning condition. By overlapping the two comb sources in the manner described the deadzone issue is overcome in the most spectrally efficient way possible.

Abstract: A device for measuring optical spectra at high speed and with high resolution using tunable optical laser comb sources. In one embodiment there is provided a first tunable comb laser source and a second tunable comb laser source whereby the wavelength of each comb laser source is chosen such that the combination of the two sources provides a continuous spectral coverage over a band in an optical spectrum under a selected wavelength tuning condition. By overlapping the two comb sources in the manner described the deadzone issue is overcome in the most spectrally efficient way possible.

Abstract: A device for measuring optical spectra at high speed and with high resolution using tunable optical laser comb sources. In one embodiment there is provided a first tunable comb laser source and a second tunable comb laser source whereby the wavelength of each comb laser source is chosen such that the combination of the two sources provides a continuous spectral coverage over a band in an optical spectrum under a selected wavelength tuning condition. By overlapping the two comb sources in the manner described the deadzone issue is overcome in the most spectrally efficient way possible.

Abstract: A method of performing spectroscopic measurements provides an optical frequency comb, and directs the comb through or at a sample. The optical frequency comb is generated by gain switching a laser diode constructed from Gallium Nitride and related materials. Various techniques are described for manipulating the comb source to achieve desired benefits for spectroscopy.

Abstract: A light-emitting diode includes a substrate, a lower cladding layer, an active layer having a quantum well of a thirty percent concentration of indium on the lower cladding layer, and an upper cladding layer. A method of manufacturing light-emitting diodes includes forming a lower cladding layer on a substrate, forming an active layer on the lower cladding layer such that the active layer has a quantum well of thirty percent indium, forming an upper cladding layer on the active layer, and forming a metal cap on the upper cladding layer.

Abstract: A light-emitting diode includes a substrate, a lower cladding layer, an active layer having a quantum well of a thirty percent concentration of indium on the lower cladding layer, and an upper cladding layer. A method of manufacturing light-emitting diodes includes forming a lower cladding layer on a substrate, forming an active layer on the lower cladding layer such that the active layer has a quantum well of thirty percent indium, forming an upper cladding layer on the active layer, and forming a metal cap on the upper cladding layer.

Abstract: A light-emitting diode includes a substrate, a lower cladding layer, an active layer having a quantum well of a thirty percent concentration of indium on the lower cladding layer, and an upper cladding layer. A method of manufacturing light-emitting diodes includes forming a lower cladding layer on a substrate, forming an active layer on the lower cladding layer such that the active layer has a quantum well of thirty percent indium, forming an upper cladding layer on the active layer, and forming a metal cap on the upper cladding layer.

Abstract: An illuminator (1) has bare semiconductor die light emitting diodes (7) on pads (11) of Ag/Ni/Ti material. A Si wafer (13) has a rough upper surface, and this roughness is carried through an oxide layer (12) and the pads (11) to provide a rough but reflective upper surface of the pads (11), thus forming a diffuser. Epoxy encapsulant (9) is deposited in a layer over the diodes (7) and the pads (11), and it is index matched with a top diffuser plate (8) of opal glass.

Abstract: An illuminator (1) has bare semiconductor die light emitting diodes (7) on pads (11) of Ag/Ni/Ti material. A Si wafer (13) has a rough upper surface, and this roughness is carried through an oxide layer (12) and the pads (11) to provide a rough but reflective upper surface of the pads (11), thus forming a diffuser. Epoxy encapsulant (9) is deposited in a layer over the diodes (7) and the pads (11), and it is index matched with a top diffuser plate (8) of opal glass.

Abstract: An illuminator (1) has bare semiconductor die light emitting diodes (7) on pads (11) of Ag/Ni/Ti material. A Si wafer (13) has a rough upper surface, and this roughness is carried through an oxide layer (12) and the pads (11) to provide a rough but reflective upper surface of the pads (11), thus forming a diffuser. Epoxy encapsulant (9) is deposited in a layer over the diodes (7) and the pads (11), and it is index matched with a top diffuser plate (8) of opal glass.

Abstract: A light-emitting diode includes a substrate, a lower cladding layer, an active layer having a quantum well of a thirty percent concentration of indium on the lower cladding layer, and an upper cladding layer. A method of manufacturing light-emitting diodes includes forming a lower cladding layer on a substrate, forming an active layer on the lower cladding layer such that the active layer has a quantum well of thirty percent indium, forming an upper cladding layer on the active layer, and forming a metal cap on the upper cladding layer.

Abstract: An atmospheric pressure plasma system (1) sharing electrodes (4) defining a plasma region (5) mounted in an enclosure housing (2). The enclosure housing has an open to atmosphere entry port assembly (10) and exit port assembly (11) for the continuous transfer of work-pieces through the plasma region (5). The embodiment illustrated is for precursor process gases having a relative density less than that of the ambient air so that the precursor gases rise in the enclosure housing (2) expelling the heavier ambient and exhaust gases. Where the gases have a relative density greater than ambient the port assemblies (10 and 11) are sited above the plasma region (5).

Abstract: An illuminator (1) comprises a substrate (2) supporting light source dies (4) driven via wire bonds (5). The substrate (2) comprises a silicon strip (20) in direct contact with a brass heat sink (3), thus providing for excellent heat transfer away from the die (4). Pads (10, 11, 12) of Ni, Ti, and Ag sub-layers support the die (4) and the wire bonds (5). These both provide electrical connections for the die (4) and also light reflection upwardly because the Ag sub-layers of the pads (10, 11, 12) are evaporated over a thermally grown oxide layer (21) on the Si (20). The oxide has a very high dielectric strength, thus maintaining excellent electrical insulating properties over a large voltage range.

Abstract: An illuminator (1) has bare semiconductor die light emiting diodes (7) on pads (11) of Ag/Ni/Ti material. A Si wafer (13) has a rough upper surface, and this roughness is carried through an oxide layer (12) and the pads (11) to provide a rough but reflective upper surface of the pads (11), thus forming a diffuser. Epoxy encapsulant (9) is deposited in a layer over the diodes (7) and the pads (11), and it is index matched with a top diffuser plate (8) of opal glass.

Abstract: An illuminator (1) comprises a substrate (2) supporting light source dies (4) driven via wire bonds (5). The substrate (2) comprises a silicon strip (20) in direct contact with a brass heat sink (3), thus providing for excellent heat transfer away from the die (4). Pads (10, 11, 12) of Ni, Ti, and Ag sub-layers support the die (4) and the wire bonds (5). These both provide electrical connections for the die (4) and also light reflection upwardly because the Ag sub-layers of the pads (10, 11, 12) are evaporated over a thermally grown oxide layer (21) on the Si (20). The oxide has a very high dielectric strength, thus maintaining excellent electrical insulating properties over a large voltage range.

Abstract: An atmospheric pressure plasma system (1) sharing electrodes (4) defining a plasma region (5) mounted in an enclosure housing (2). The enclosure housing has an open to atmosphere entry port assembly (10) and exit port assembly (11) for the continuous transfer of work-pieces through the plasma region (5). The embodiment illustrated is for precursor process gases having a relative density less than that of the ambient air so that the precursor gases rise in the enclosure housing (2) expelling the heavier ambient and exhaust gases. Where the gases have a relative density greater than ambient the port assemblies (10 and 11) are sited above the plasma region (5).