Abstract: The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the semiconductor device. The semiconductor device includes a semiconductor substrate and an indium doped dielectric layer located over the semiconductor substrate.

Abstract: The invention is an optical waveguide device and method of fabrication, where the device includes a pyroelectric substrate such as lithium niobate, a waveguide formed in the substrate, a buffer layer formed over the substrate, and at least one electrode formed over the buffer layer. The device further includes a dielectric diffusion barrier layer formed between the substrate and the buffer layer. The dielectric material is preferably a fluorine-doped nitride or a deuterated nitride.

Abstract: Oxidation and sulfidation resistant alloys and mixtures including chromium and niobium as well as oxidation and sulfidation resistant articles including chromium and niobium present as either an alloy or a mixture are provided. A method for preparing an oxidation and sulfidation resistant article by preparing a material including chromium and niobium and either forming an article directly from the chromium and niobium containing material or forming the article from a base material and coating the material with a coating including a chromium and niobium-containing material is provided.