Abstract: Vacuum deposited thin films of material are used to create an interface that non-preferentially interacts with different domains of an underlying block copolymer film. The non-preferential interface prevents formation of a wetting layer and influences the orientation of domains in the block copolymer. The purpose of the deposited polymer is to produce nano structured features in a block copolymer film that can serve as lithographic patterns.

Abstract: The concepts described herein involve the use of random copolymer top coats that can be spin coated onto block copolymer thin films and used to control the interfacial energy of the top coat-block copolymer interface. The top coats are soluble in aqueous weak base and can change surface energy once they are deposited onto the block copolymer thin film. The use of self-assembled block copolymers to produce advanced lithographic patterns relies on their orientation control in thin films. Top coats potentially allow for the facile orientation control of block copolymers which would otherwise be quite challenging.

Abstract: The present invention includes a diblock copolymer system that self-assembles at very low molecular weights to form very small features. In one embodiment, one polymer in the block copolymer contains silicon, and the other polymer is a polylactide. In one embodiment, the block copolymer is synthesized by a combination of anionic and ring opening polymerization reactions. In one embodiment, the purpose of this block copolymer is to form nanoporous materials that can be used as etch masks in lithographic patterning.

Abstract: A guiding pattern for directed self-assembly (DSA) of a block copolymer (BCP) is an array of spaced guiding stripes on a substrate that have a width equal to nL0 and a pitch equal to (n+k)L0, where n and k are integers equal to or greater than 1 and L0 is the natural pitch of the BCP. The guiding stripes have oxidized sidewalls. A silicon-containing BCP self-assembles with the BCP component without silicon wetting the oxidized sidewalls. Then oxygen reactive ion etching (RIE) removes the BCP component without silicon and oxidizes the silicon-containing BCP component. The remaining pattern of silicon oxide containing BCP component can then be used as an etch mask to etch the underlying substrate.

Abstract: A method that uses both electron beam (e-beam) lithography and directed self-assembly (DSA) of block copolymers (BCPs) makes guiding lines with oxidized sidewalls for use in subsequent DSA of BCPs. A series of films is deposited on a substrate including a first cross-linked polymer mat layer, a layer of resist, an etch stop layer resistant to oxygen reactive-ion-etching, a second cross-linked polymer mat layer, and an e-beam resist. After patterning and etching the second mat layer, a BCP self-assembles onto the patterned second mat layer and one of the BCP components is removed. Then the second mat layer is etched, using the remaining BCP component as an etch mask. Additional etching steps then create guiding lines of the first mat layer with oxidized sidewalls. The resulting guiding lines have better quality and lower roughness than guiding lines made with just e-beam lithography.

Abstract: A guiding pattern for directed self-assembly (DSA) of a block copolymer (BCP) is an array of spaced guiding stripes on a substrate that have a width equal to nL0 and a pitch equal to (n+k)L0, where n and k are integers equal to or greater than 1 and L0 is the natural pitch of the BCP. The guiding stripes have oxidized sidewalls. A silicon-containing BCP self-assembles with the BCP component without silicon wetting the oxidized sidewalls. Then oxygen reactive ion etching (RIE) removes the BCP component without silicon and oxidizes the silicon-containing BCP component. The remaining pattern of silicon oxide containing BCP component can then be used as an etch mask to etch the underlying substrate.

Abstract: The use of self-assembled block copolymer structures to produce advanced lithographic patterns relies on control of the orientation of these structures in thin films. In particular, orientation of cylinders and lamellae perpendicular to the plane of the block copolymer film is required for most applications. The preferred method to achieve orientation is by heating. The present invention involves the use of polarity-switching top coats to control block copolymer thin film orientation by heating. The top coats can be spin coated onto block copolymer thin films from polar casting solvents and they change composition upon thermal annealing to become “neutral”. Top coats allow for the facile orientation control of block copolymers which would otherwise not be possible by heating alone.

Abstract: The present invention involves the use of random copolymer top coats that can be spin coated onto block copolymer thin films and used to control the interfacial energy of the top coat-block copolymer interface. The top coats are soluble in aqueous weak base and can change surface energy once they are deposited onto the block copolymer thin film. The use of self-assembled block copolymers to produce advanced lithographic patterns relies on their orientation control in thin films. Top coats potentially allow for the facile orientation control of block copolymers which would otherwise be quite challenging.

Abstract: The present invention includes a diblock copolymer system that self-assembles at very low molecular weights to form very small features. In one embodiment, one polymer in the block copolymer contains silicon, and the other polymer is a polylactide. In one embodiment, the block copolymer is synthesized by a combination of anionic and ring opening polymerization reactions. In one embodiment, the purpose of this block copolymer is to form nanoporous materials that can be used as etch masks in lithographic patterning.

Abstract: Random copolymer top coats are described that can be spin coated onto block copolymer thin films and used to control the interfacial energy of the top coat-block copolymer interface. The top coats are soluble in aqueous weak base and can change surface energy once they are deposited onto the block copolymer thin film. The use of self-assembled block copolymers to produce advanced lithographic patterns relies on their orientation control in thin films.

Abstract: A diblock copolymer system that self-assembles at very low molecular weights to form very small features is described. One polymer in the block copolymer contains silicon, and the other polymer is a polylactide. The block copolymer may be synthesized by a combination of anionic and ring opening polymerization reactions. This block copolymer may form nanoporous materials that can be used as etch masks in lithographic patterning.

Abstract: The present invention uses vacuum deposited thin films of material to create an interface that non-preferentially interacts with different domains of an underlying block copolymer film. The non-preferential interface prevents formation of a wetting layer and influences the orientation of domains in the block copolymer. The purpose of the deposited polymer is to produce nanostructured features in a block copolymer film that can serve as lithographic patterns.

Abstract: Vacuum deposited thin films of material are described to create an interface that non-preferentially interacts with different domains of an underlying block copolymer film. The non-preferential interface prevents formation of a wetting layer and influences the orientation of domains in the block copolymer. The purpose of the deposited polymer is to produce nanostructured features in a block copolymer film that can serve as lithographic patterns.

Abstract: The use of self-assembled block copolymer structures to produce advanced lithographic patterns relies on control of the orientation of these structures in thin films. In particular, orientation of cylinders and lamellae perpendicular to the plane of the block copolymer film is required for most applications. The preferred method to achieve orientation is by heating. The present invention involves the use of polarity-switching top coats to control block copolymer thin film orientation by heating. The top coats can be spin coated onto block copolymer thin films from polar casting solvents and they change composition upon thermal annealing to become “neutral”. Top coats allow for the facile orientation control of block copolymers which would otherwise not be possible by heating alone.

Abstract: The present invention involves the use of random copolymer top coats that can be spin coated onto block copolymer thin films and used to control the interfacial energy of the top coat-block copolymer interface. The top coats are soluble in aqueous weak base and can change surface energy once they are deposited onto the block copolymer thin film. The use of self-assembled block copolymers to produce advanced lithographic patterns relies on their orientation control in thin films. Top coats potentially allow for the facile orientation control of block copolymers which would otherwise be quite challenging.

Abstract: The present invention includes a diblock copolymer system that self-assembles at very low molecular weights to form very small features. In one embodiment, one polymer in the block copolymer contains silicon, and the other polymer is a polylactide. In one embodiment, the block copolymer is synthesized by a combination of anionic and ring opening polymerization reactions. In one embodiment, the purpose of this block copolymer is to form nanoporous materials that can be used as etch masks in lithographic patterning.

Abstract: The present invention uses vacuum deposited thin films of material to create an interface that non-preferentially interacts with different domains of an underlying block copolymer film. The non-preferential interface prevents formation of a wetting layer and influences the orientation of domains in the block copolymer. The purpose of the deposited polymer is to produce nanostructured features in a block copolymer film that can serve as lithographic patterns.

Abstract: The present invention discloses diblock copolymer systems that self-assemble to produce very small structures. These co-polymers consist of one block that contains silicon and another block comprised of an oligosaccharide that are coupled by azide-alkyne cycloaddition.