Patents by Inventor Julia M. Wu

Julia M. Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Densely packed metal segments patterned in a semiconductor die
    Patent number: 7709949
    Abstract: A method of patterning a metal layer in a semiconductor die comprises forming a mask on the metal layer to define an open region and a dense region. The method further comprises etching the metal layer at a first etch rate to form a number of metal segments in the open region and etching the metal layer at a second etch rate to form a number of metal segments in the dense region, where the first etch rate is approximately equal to the second etch rate. The method further comprises performing a number of strip/passivate cycles to remove a polymer formed on sidewalls of the metal segments in the dense region. The sidewalls of the metal segments in the dense region undergo substantially no undercutting and residue is removed from the sidewalls of the metal segments in the dense region.
    Type: Grant
    Filed: April 22, 2005
    Date of Patent: May 4, 2010
    Assignee: Newport Fab, LLC
    Inventors: Tinghao F. Wang, Dieter Dornisch, Julia M. Wu, Hadi Abdul-Ridha, David J. Howard
  • Densely packed metal segments patterned in a semiconductor die
    Publication number: 20090243114
    Abstract: A method of patterning a metal layer in a semiconductor die comprises forming a mask on the metal layer to define an open region and a dense region. The method further comprises etching the metal layer at a first etch rate to form a number of metal segments in the open region and etching the metal layer at a second etch rate to form a number of metal segments in the dense region, where the first etch rate is approximately equal to the second etch rate. The method further comprises performing a number of strip/passivate cycles to remove a polymer formed on sidewalls of the metal segments in the dense region. The sidewalls of the metal segments in the dense region undergo substantially no undercutting and residue is removed from the sidewalls of the metal segments in the dense region.
    Type: Application
    Filed: April 22, 2005
    Publication date: October 1, 2009
    Inventors: Tinghao F. Wang, Dieter Dornisch, Julia M. Wu, Hadi Abdul-Ridha, David J. Howard
  • Method for patterning densely packed metal segments in a semiconductor die and related structure
    Patent number: 6919272
    Abstract: A method of patterning a metal layer in a semiconductor die comprises forming a mask on the metal layer to define an open region and a dense region. The method further comprises etching the metal layer at a first etch rate to form a number of metal segments in the open region and etching the metal layer at a second etch rate to form a number of metal segments in the dense region, where the first etch rate is approximately equal to the second etch rate. The method further comprises performing a number of strip/passivate cycles to remove a polymer formed on sidewalls of the metal segments in the dense region. The sidewalls of the metal segments in the dense region undergo substantially no undercutting and residue is removed from the sidewalls of the metal segments in the dense region.
    Type: Grant
    Filed: February 1, 2003
    Date of Patent: July 19, 2005
    Assignee: Newport Fab, LLC
    Inventors: Tinghao F. Wang, Dieter Dornisch, Julia M. Wu, Hadi Abdul-Ridha, David J. Howard
  • Method for patterning densely packed metal segments in a semiconductor die and related structure
    Publication number: 20040152302
    Abstract: A method of patterning a metal layer in a semiconductor die comprises forming a mask on the metal layer to define an open region and a dense region. The method further comprises etching the metal layer at a first etch rate to form a number of metal segments in the open region and etching the metal layer at a second etch rate to form a number of metal segments in the dense region, where the first etch rate is approximately equal to the second etch rate. The method further comprises performing a number of strip/passivate cycles to remove a polymer formed on sidewalls of the metal segments in the dense region. The sidewalls of the metal segments in the dense region undergo substantially no undercutting and residue is removed from the sidewalls of the metal segments in the dense region.
    Type: Application
    Filed: February 1, 2003
    Publication date: August 5, 2004
    Applicant: Newport Fab, LLC dba Jazz Semiconductor
    Inventors: Tinghao F. Wang, Dieter Dornisch, Julia M. Wu, Hadi Abdul-Ridha, David J. Howard