Patents by Inventor Julia-Magdalena Straeussnigg

Julia-Magdalena Straeussnigg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device, microphone and methods for forming a semiconductor device
    Patent number: 11352253
    Abstract: A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.
    Type: Grant
    Filed: September 17, 2020
    Date of Patent: June 7, 2022
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Markus Kahn, Anna-Katharina Kaiser, Soenke Pirk, Juergen Steinbrenner, Julia-Magdalena Straeussnigg
  • Semiconductor Device, Microphone and Methods for Forming a Semiconductor Device
    Publication number: 20210002132
    Abstract: A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.
    Type: Application
    Filed: September 17, 2020
    Publication date: January 7, 2021
    Inventors: Markus Kahn, Anna-Katharina Kaiser, Soenke Pirk, Juergen Steinbrenner, Julia-Magdalena Straeussnigg
  • Semiconductor device, microphone and methods for forming a semiconductor device
    Patent number: 10858246
    Abstract: A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: December 8, 2020
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Markus Kahn, Anna-Katharina Kaiser, Soenke Pirk, Juergen Steinbrenner, Julia-Magdalena Straeussnigg
  • SEMICONDUCTOR DEVICE, MICROPHONE AND METHODS FOR FORMING A SEMICONDUCTOR DEVICE
    Publication number: 20180237292
    Abstract: A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.
    Type: Application
    Filed: February 21, 2018
    Publication date: August 23, 2018
    Inventors: Markus Kahn, Anna-Katharina Kaiser, Soenke Pirk, Juergen Steinbrenner, Julia-Magdalena Straeussnigg