Abstract: A detection system and method for the migrating cell is provided. The system is configured to detect a migrating cell combined with an immunomagnetic bead. The system includes a platform, a microchannel, a magnetic field source, a coherent light source and an optical sensing module. The microchannel is configured to allow the migrating cell to flow in it along a flow direction. The magnetic field source is configured to provide magnetic force to the migrating cell combined with the immunomagnetic bead. The magnetic force includes at least one magnetic force component and the magnetic force component is opposite to the flow direction of the microchannel. The coherent light source is configured to provide the microchannel with the coherent light. The optical sensing module is configured to receive the interference light caused by the coherent light being reflected by the sample inside the microchannel.

Abstract: Semiconductor device structures having metal gate structures with tunable work function values are provided. In one example, a first gate structure and a second gate structure formed on a substrate, wherein the first gate structure includes a first work function metal having a first material, and the second gate structure includes a second work function metal having a second material, the first material being different from the second material, wherein the first gate structure further includes a gate dielectric layer, a self-protective layer having metal phosphate, and the first work function metal on the self-protective layer.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a semiconductor stack including semiconductor layers over a substrate, wherein the semiconductor layers are separated from each other and are stacked up along a direction substantially perpendicular to a top surface of the substrate; an isolation structure around a bottom portion of the semiconductor stack and separating active regions; a metal gate structure over a channel region of the semiconductor stack and wrapping each of the semiconductor layers; a gate spacer over a source/drain (S/D) region of the semiconductor stack and along sidewalls of a top portion of the metal gate structure; and an inner spacer over the S/D region of the semiconductor stack and along sidewalls of lower portions of the metal gate structure and wrapping edge portions of each of the semiconductor layers.

Abstract: The present invention relates to a thyroid hormone receptor ? selective agonist compound represented by formula I, a pharmaceutical composition and use thereof. The compound improves the selectivity to THR-? and the druggability of the compound while maintaining good THR-? agonistic activity, and shows a certain activity in in vivo pharmacological experiments.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a semiconductor stack including semiconductor layers over a substrate, wherein the semiconductor layers are separated from each other and are stacked up along a direction substantially perpendicular to a top surface of the substrate; an isolation structure around a bottom portion of the semiconductor stack and separating active regions; a metal gate structure over a channel region of the semiconductor stack and wrapping each of the semiconductor layers; a gate spacer over a source/drain (S/D) region of the semiconductor stack and along sidewalls of a top portion of the metal gate structure; and an inner spacer over the S/D region of the semiconductor stack and along sidewalls of lower portions of the metal gate structure and wrapping edge portions of each of the semiconductor layers.

Abstract: The present invention pertains to anti viral compounds. The disclosure includes a method for preventing and/or treating a virus infection through the inhibition of a cysteine protease in a virus and/or a sodium taurocholate cotransporting polypeptide in a cell, particularly SARS-COV-2 and hepatitis B virus (HBV). Also provided includes the composition/pharmaceutical composition for preventing and/or treating a virus infection comprising any of the compounds, pharmaceutically acceptable salt thereof, or its mixture, and the use of the compounds.

Abstract: The present invention pertains to a compound, particularly ovatodiolide, for use in preventing or treating an infection of a virus, including a hepatitis virus, an influenza virus, a herpes simplex virus, an enterovirus, a rotavirus, a dengue virus, a poxvirus, a human immunodeficiency virus, an adenovirus, a coronavirus, an arenavirus, a measles virus, a retrovirus and a norovirus, particularly SARS-COV-2. Also provided are the method for preventing or treating a virus infection using the compound, and the pharmaceutical composition or composition comprising the compound.

Abstract: A method includes depositing a silicon layer, which includes first portions over a plurality of strips, and second portions filled into trenches between the plurality of strips. The plurality of strips protrudes higher than a base structure. The method further includes performing an anneal to allow parts of the first portions of the silicon layer to migrate toward lower parts of the plurality of trenches, and performing an etching on the silicon layer to remove some portions of the silicon layer.

Abstract: The present invention relates to a method of preventing or treating a fibrotic condition, comprising administering an effective amount of composition to a subject in need thereof; wherein the composition comprises triterpenes extracted from Antrodia camphorate or Anisomeles indica.

Abstract: The present invention relates to a method of preventing or treating a fibrotic condition, comprising administering an effective amount of composition to a subject in need thereof; wherein the composition comprises triterpenes extracted from Antrodia-camphorate or anisomeles indica.

Abstract: Provided is a composition for enhancing cognitive abilities and use thereof; wherein the composition consists essentially of royal jelly, Taiwan green propolis and soybean lecithin; and the cognitive abilities comprise memory, judgment, intuition, calculation, and reaction abilities.

Abstract: In a method of manufacturing a semiconductor device, a fin structure having a channel region protruding from an isolation insulating layer disposed over a semiconductor substrate is formed, a cleaning operation is performed, and an epitaxial semiconductor layer is formed over the channel region. The cleaning operation and the forming the epitaxial semiconductor layer are performed in a same chamber without breaking vacuum.

Abstract: A method includes depositing a silicon layer, which includes first portions over a plurality of strips, and second portions filled into trenches between the plurality of strips. The plurality of strips protrudes higher than a base structure. The method further includes performing an anneal to allow parts of the first portions of the silicon layer to migrate toward lower parts of the plurality of trenches, and performing an etching on the silicon layer to remove some portions of the silicon layer.

Abstract: The present invention relates to a method of preventing or treating a fibrotic condition, comprising administering an effective amount of composition to a subject in need thereof; wherein the composition comprises triterpenes extracted from Antrodia camphorate or Anisomeles indica.

Abstract: A method includes forming a fin extending from a substrate; depositing a liner over a top surface and sidewalls of the fin, where the minimum thickness of the liner is dependent on selected according to a first germanium concentration of the fin; forming a shallow trench isolation (STI) region adjacent the fin; removing a first portion of the liner on sidewalls of the fin, the first portion of the liner being above a topmost surface of the STI region; and forming a gate stack on sidewalls and a top surface of the fin, where the gate stack is in physical contact with the liner.

Abstract: A connecting device and an assembly of the connecting device and a mating device are provided. The connecting device includes an insulating main body, a plurality of terminals, a magnet set, an inner housing, a crown leaf spring, an outer housing, and a wave spring. The plurality of terminals are disposed on the insulating main body, the magnet set is disposed on the insulating main body, and the inner housing is sleeved around the insulating main body. The wave spring and the crown leaf spring are each disposed between the inner housing and the outer housing, and abut the inner housing, so that the insulating main body, the plurality of terminals, the magnet set, and the inner housing are arranged in a floating state.

Abstract: In a method of manufacturing a semiconductor device, a fin structure having a channel region protruding from an isolation insulating layer disposed over a semiconductor substrate is formed, a cleaning operation is performed, and an epitaxial semiconductor layer is formed over the channel region. The cleaning operation and the forming the epitaxial semiconductor layer are performed in a same chamber without breaking vacuum.

Abstract: A connecting device and an assembly of the connecting device and a mating device are provided. The connecting device includes an insulating main body, a plurality of terminals, a magnet set, an inner housing, a crown leaf spring, an outer housing, and a wave spring. The plurality of terminals are disposed on the insulating main body, the magnet set is disposed on the insulating main body, and the inner housing is sleeved around the insulating main body. The wave spring and the crown leaf spring are each disposed between the inner housing and the outer housing, and abut the inner housing, so that the insulating main body, the plurality of terminals, the magnet set, and the inner housing are arranged in a floating state.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a semiconductor stack including semiconductor layers over a substrate, wherein the semiconductor layers are separated from each other and are stacked up along a direction substantially perpendicular to a top surface of the substrate; an isolation structure around a bottom portion of the semiconductor stack and separating active regions; a metal gate structure over a channel region of the semiconductor stack and wrapping each of the semiconductor layers; a gate spacer over a source/drain (S/D) region of the semiconductor stack and along sidewalls of a top portion of the metal gate structure; and an inner spacer over the S/D region of the semiconductor stack and along sidewalls of lower portions of the metal gate structure and wrapping edge portions of each of the semiconductor layers.

Abstract: An eyeglasses assembly structure is revealed. A pivot member which is pivotally connected to a first assembly portion of a frame is inserted and mounted in a switch member. A first rib and a second rib are opposite to each other and disposed on a second assembly portion at a front side of a temple. The first rib is mounted into a first mounting groove at one end of the pivot member. A positioning flange is formed on the second rib and inserted through an opening of the switch member to be mounted in a second mounting groove on the other end of the pivot member. When the switch member is rotated an angle to be staggered or aligned with respect to the positioning flange of the second rib, the temple is firmly fixed to or separated from the frame. Thereby parts are assembled and replaced easily and conveniently.