Abstract: In one embodiment, a method for cleaning a chemical mechanical polishing (CMP) pad is provided. The CMP pad surface has a residue thereon. Chemicals are applied onto the surface of the CMP pad and the pad surface is rinsed so as to substantially remove by-product produced by the chemicals. A mechanical conditioning operation is performed on the surface of the pad. The wafer surface includes copper and oxide during the CMP operation.

Abstract: A method and a system are provided for cleaning a CMP pad. The method starts by applying chemicals onto the surface of the CMP pad. The chemicals are then allowed to react with a residue that may be on the pad to produce by-products. Next, the pad surface is rinsed to substantially remove the by-products. A mechanical conditioning operation is then performed on the surface of the pad. In one example, the wafer surface can be a metal, such as copper. Where the wafer surface is copper, the chemical is most preferably HCl, and a solution includes HCl and DI water. Where the wafer surface is oxide, the chemical is most preferably NH4OH, and the solution includes NH4OH and DI water. Generally, the CMP pad can be in the form of a linear belt, in the form of an round disk, or in any other mechanical or physical configuration.

Abstract: A brush core and the method for making a brush core for use in substrate scrubbing are provided. The substrate can be any substrate that may need to undergo a scrubbing operation to complete a cleaning operation, etching operation, or other preparation. For instance, the substrate can be a semiconductor wafer, a disk, or any other type of work piece that will benefit from a brush core that can deliver uniform controlled amounts of fluid through the brush along an entire length of the brush core. The brush core is defined by a tubular core having a length that extends between a first end and a second end. The first end has an opening into a bore that is defined through a middle of the tubular core and extends along an inner length of the tubular core. A first plurality of holes are oriented along a plurality of first lines that extend in the direction of the length of the tubular core, and each of the first plurality of holes define paths to the bore of the tubular core.

Abstract: A cover to be disposed over a substrate processing apparatus is provided. The cover includes a material capable of being tuned between an opaque state and a transparent state. Being tuned closer to the opaque state limits an amount of light capable of passing through the tunable cover and into the substrate processing apparatus during substrate processing. Being tuned closer to the transparent state allows viewing into the substrate processing apparatus without removing the cover.

Abstract: A method and system are provided for cleaning a surface of a semiconductor wafer following a fabrication operation. The system includes a brush box, which has a fluid manifold and at least one nozzle. The nozzle is connected to the fluid manifold by a flexible conduit. The nozzle is configured to spray a liquid onto the surface of the wafer at an application angle and at a fan angle. The application angle is defined between a plane of the surface of the wafer and a spraying plane of the liquid. The fan angle and the application angle are configured such that the spraying liquid covers the surface of the wafer in a quiescent manner.

Abstract: A method and system are provided for reducing and eliminating photo-assisted copper corrosion during a wafer cleaning process. In one example, a method is provided for making a composite material for the cover of a wafer cleaning system. A first transparent layer is formed. A transparency tunable layer is formed over the first transparent layer. Electrical connections are defined between a first portion and a second portion of the transparency tunable layer. And a second transparent layer is formed over the transparency tunable layer.

Abstract: A method and a system are provided for cleaning a CMP pad. The method starts by applying chemicals onto the surface of the CMP pad. The chemicals are then allowed to react with a residue that may be on the pad to produce by-products. Next, the pad surface is rinsed to substantially remove the by-products. A mechanical conditioning operation is then performed on the surface of the pad. In one example, the wafer surface can be a metal, such as copper. Where the wafer surface is copper, the chemical is most preferably HCl, and a solution includes HCl and DI water. Where the wafer surface is oxide, the chemical is most preferably NH4OH, and the solution includes NH4OH and DI water. Generally, the CMP pad can be in the form of a linear belt, in the form of an round disk, or in any other mechanical or physical configuration.

Abstract: A method and system are provided for cleaning a surface of a semiconductor wafer following a plasma etching operation. The method is preferably performed inside a brush box and involves wetting the surface of the semiconductor wafer by using a non-splash rinse technique. The non-splash rinse technique is configured to quickly and evenly saturate the surface of the semiconductor wafer with a liquid (preferably de-ionized water). The wetting will therefore remove unwanted residues that could otherwise further cause stains or scratches on the wafer surface. Following the wetting operation, the surface of the wafer may be finely scrubbed with a cleaning brush that applies a chemical solution to the surface of the wafer. A second cleaning brush may also be implemented so that both the top and the bottom surfaces of the wafer may be finely scrubbed.

Abstract: A method and a system are provided for cleaning a CMP pad. The method starts by applying chemicals onto the surface of the CMP pad. The chemicals are then allowed to react with a residue that may be on the pad to produce by-products. Next, the pad surface is rinsed to substantially remove the by-products. A mechanical conditioning operation is then performed on the surface of the pad. In one example, the wafer surface can be a metal, such as copper. Where the wafer surface is copper, the chemical is most preferably HCl, and a solution includes HCl and DI water. Where the wafer surface is oxide, the chemical is most preferably NH4OH, and the solution includes NH4OH and DI water. Generally, the CMP pad can be in the form of a linear belt, in the form of an round disk, or in any other mechanical or physical configuration.

Abstract: A brush core and the method for making a brush core for use in substrate scrubbing are provided. The substrate can be any substrate that may need to undergo a scrubbing operation to complete a cleaning operation, etching operation, or other preparation. For instance, the substrate can be a semiconductor wafer, a disk, or any other type of work piece that will benefit from a brush core that can deliver uniform controlled amounts of fluid through the brush along an entire length of the brush core. The brush core is defined by a tubular core having a length that extends between a first end and a second end. The first end has an opening into a bore that is defined through a middle of the tubular core and extends along an inner length of the tubular core. A first plurality of holes are oriented along a plurality of first lines that extend in the direction of the length of the tubular core, and each of the first plurality of holes define paths to the bore of the tubular core.

Abstract: A brush core and the method for making a brush core for use in substrate scrubbing are provided. The substrate can be any substrate that may need to undergo a scrubbing operation to complete a cleaning operation, etching operation, or other preparation. For instance, the substrate can be a semiconductor wafer, a disk, or any other type of work piece that will benefit from a brush core that can deliver uniform controlled amounts of fluid through the brush along an entire length of the brush core. The brush core is defined by a tubular core having a length that extends between a first end and a second end. The first end has an opening into a bore that is defined through a middle of the tubular core and extends along an inner length of the tubular core. A first plurality of holes are oriented along a plurality of first lines that extend in the direction of the length of the tubular core, and each of the first plurality of holes define paths to the bore of the tubular core.